Abstract: A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

Abstract: A substrate processing system includes a first substrate processing chamber, a first substrate transfer chamber connected to the first substrate processing chamber, a second substrate processing chamber, and a second substrate transfer chamber connected to the second substrate processing chamber. The substrate processing system further includes a buffer chamber connected between the first substrate transfer chamber and the second substrate transfer chamber, the buffer chamber having at least one substrate holder. At least a part of the buffer chamber and at least one of the first substrate transfer chamber or the second substrate transfer chamber are vertically overlapped with each other.

Abstract: A substrate processing apparatus includes: a processing chamber in which a substrate is processed with a processing liquid; a nozzle having a discharge port from which the processing liquid is discharged, the discharge port being formed in a distal end portion of the nozzle; a nozzle bath including an accommodation chamber formed therein, wherein the distal end portion of the nozzle is accommodated in the accommodation chamber at a standby time at which the processing liquid is not supplied to the substrate; a circulation line configured to return the processing liquid, which is discharged from the nozzle to the nozzle bath, to the nozzle; and a first restraint part configured to restrain a gas from flowing between an outside of the nozzle bath and the processing liquid present inside the nozzle bath when the processing liquid discharged from the nozzle to the nozzle bath is circulated to the nozzle.

Abstract: An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.

Abstract: A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.

Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.

Abstract: A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.

Abstract: The invention relates to a device for pulsed laser deposition and a substrate with a substrate surface, which device includes: a substrate holder for holding the substrate; a target arranged facing the substrate surface of the substrate; a velocity filter arranged between the substrate and the target; a pulsed laser directed onto the target at a target spot for generating a plasma plume of target material; and a plasma hole plate arranged between the target and the substrate. The plasma hole plate has a plasma passage opening divided in an upstream section and a downstream section by a dividing plane. The target spot coincides with the dividing plane, and the surface area of the upstream section is larger than the surface area of the downstream section.

Abstract: A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode. The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.

Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.

Abstract: An evaporator device incudes a crucible comprising an inlet through which solid material is introduced to the crucible, and an outlet through which vaporised material is released from the crucible. Vapours outgassed from molten material within the crucible are guided away from the outlet.

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Abstract: A carbon nanotube (CNT) growth apparatus includes: a body; an inlet cap; an outlet cap; insulation extending through a portion of an interior of the body, the insulation including a first stage and a second stage, a flow tube extending through the inlet cap and passing coaxially through the first stage of the insulation, the flow tube configured to receive and flow a fluid to the interior of the body; a gas heater including a plurality of heat pipes configured to be inserted in the first stage of the insulation, the plurality of heat pipes being disposed adjacent to the flow tube; a substrate heater incorporated in the second stage of the insulation; and a temperature controller configured to adjust a temperature of the gas heater and substrate heater, wherein a removed portion of the second stage is configured to provide an unobstructed view of the substrate.

Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

Abstract: The present disclosure provides a mask device and a manufacturing method thereof, and an evaporation system. The mask device includes a frame, strip alignment plates and a strip support plate, hollow portions are provided in the strip alignment plates, and the strip alignment plates are fixed on the frame; the strip support plate and the strip alignment plates cross each other, a plurality of welding spots are provided on the surface of the strip support plate proximal to the frame, and are welded and fixed to the frame, and the plurality of welding spots are provided in the region of the strip support plate corresponding to the hollow portions.

Abstract: A wet bench includes an outer tank and an inner tank. The outer tank has a first base plate and a plurality of first sidewalls defining a first containing space. A first portion of the first base plate is higher than a second portion of the first base plate. The inner tank has a portion in the first containing space and extends through the first base plate of the outer tank. The inner tank has a second base plate and a plurality of second sidewalls defining a second containing space.

Abstract: A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.