Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.

Abstract: Embodiments described herein relate to a precision dynamic leveling mechanism for repeatedly positioning the pedestal within a process. The precision dynamic leveling mechanism includes bearing assemblies. Bearing assemblies having inner races forced against a pedestal assembly carrier and outer races forced against a guide adaptor provide nominal clearance between the inner races and outer races to allow the inner races and the outer races to slide on each other with minimal or no radial motion.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

Abstract: A deposition apparatus may include a chamber, a crucible in the chamber, a cover part covering the crucible, and 2n nozzles (where ‘n’ is a positive integer number) protruding from the cover part and arranged in a first direction. Among the 2n nozzles, a distance between a n-th nozzle and a (n+1)-th nozzle may be greater than a distance between a (2n?1)-th nozzle and a 2n-th nozzle.

Abstract: The invention relates to a vapour generator for the deposition of a metal coating onto a substrate (7), preferably a steel strip, that comprises a vacuum chamber (6) in the form of a housing including a vapour deposition head or ejector (3) in tight communication via a supply duct (4) with at least one crucible (1) containing the coating metal in a liquid form and located outside the vacuum chamber (6), characterised in that the ejector (3) includes a longitudinal slot for the vapour outlet acting as a sonic throat and extending on the entire width of the substrate (7), a filtration medium or a charge loss member (3A) made of a sintered material being provided in the ejector immediately before said slot on the vapour path in order to equalise the flow speed of the vapour exiting the ejector (3) through the sonic throat.

Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

Abstract: A vapor deposition mask used to manufacture a display device includes a notch portion. The vapor deposition mask is provided with an FMM sheet and a first cover sheet. The first cover sheet includes a trunk portion and a notch forming portion that protrudes from the trunk portion and prevents film formation on the notch portion, and the thickness of at least a part of the notch forming portion is smaller than the thickness of the trunk portion.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

Abstract: Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of t

Abstract: In a method of manufacturing a one-dimensionally varying optical filter, a substrate is coated to form a stack of layers of two or more different types. The coating may, for example, employ sputtering, electron-beam evaporation, or thermal evaporation. During the coating, the time-averaged deposition rate is varied along an optical gradient direction by generating reciprocation between a shadow mask and the substrate in a reciprocation direction that is transverse to the optical gradient direction. In some approaches, the shadow mask is periodic with a mask period defined along the direction of reciprocation, and the generated reciprocation has a stroke equal to or greater than the mask period along the direction of reciprocation. The substrate and the shadow mask may also be rotated together as a unit during the coating. Also disclosed are one-dimensionally varying optical filters, such as linear variable filters, made by such methods.

Abstract: A liquid processing apparatus includes: a substrate processing unit; a supply line that supplies the fluid to the substrate processing unit; a flow meter that measures a flow rate of the fluid flowing through the supply line; a flow rate adjustment mechanism that adjusts the flow rate of the fluid flowing through the supply line; and a controller that control the flow rate adjustment mechanism based on a measurement result of the flow meter. The controller receives the measurement result at a first cycle. When the measurement result of the flow meter indicates that the flow rate of the fluid flowing through the supply line is included in a preset range, the controller causes the flow rate adjustment mechanism to adjust the flow rate of the fluid flowing through the supply line at a cycle having a time interval longer than a time interval of the first cycle.

Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.

Abstract: A vapor deposition metal mask includes a mask region including a plurality of mask holes. A connection portion of each mask hole located at a position other than the center of the mask region has a shape protruding inward of the mask hole along the entire circumference of the mask hole and is configured by a first section, which is a section closer to the center of the mask region and a second section, which is a section closer to one of the ends of the mask region. The distance between the first section and the reverse surface of the mask region is a first step height. The first step height in the end region is smaller than the first step height in the central region.

Abstract: A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.

Abstract: A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

Abstract: Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. A separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed part, enters further into the central side of the plate-shaped member, in a direction from the front surface to the back surface of the susceptor.

Abstract: The present disclosure generally relates to display technologies, and in particular, to a mask frame assembly that is suitable for use in the production of a display device, for example, an organismic light emitting diode (OLED) device. A mask frame assembly includes a frame, and an alignment mask secured to the frame. The frame includes at least one alignment mark and a cover plate on the at least one at least one alignment mark. The cover plate includes a first through-hole and a plurality of first auxiliary through-holes. The alignment mask includes at least one second through-hole and a plurality of second auxiliary through-holes.

Abstract: A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an ?-structure silicon carbide power having an average particle diameter of 0.3 to 3 ?m and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a B4C sintering aid, or with a sintering aid comprising Al2O3 and Y2O3 with total amount of 3 to 15 weight parts, and then a mixture of the ?-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.