Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.

Abstract: The disclosure discloses an evaporation source and an evaporation device. The evaporation source includes an evaporation case, a crucible, and a heating unit; the evaporation case includes a top plate, a bottom plate, a first side plate, a second side plate, a first end plate, and a second end plate; a connecting section is arranged on the side of the top plate facing the bottom plate, a nozzle group is arranged on the bottom plate to jet gas in the direction away from the top plate; and the crucible includes a cubicle body, and a folded side arranged on the outside of the crucible body, a plurality of gas outlet holes are arranged in the folded side, and the crucible body cooperates slidably with the connecting section through the folded side.

Abstract: A gas distribution plate for a chemical vapor deposition/infiltration system includes a body having a first side and a second side opposite the first side. The body may be hollow and may define an internal cavity. The gas distribution plate may also include a plurality of pass-through tubes extending through the internal cavity, a cavity inlet, and a plurality of cavity outlets. A reaction gas may be configured to flow through the plurality of pass-through tubes and a gaseous mitigation agent may be configured to flow into the internal cavity via the cavity inlet and out of the internal cavity via the plurality of cavity outlets to mix with reaction gas.

Abstract: A CVD reactor for single sided deposition of material on substrates, may comprise: an upper gas manifold and a lower gas manifold; a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; and clamps within the vacuum chamber for making electrical contact to the at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row, and wherein the gas flows compr

Abstract: A mask carrier and an evaporation system are provided. The mask carrier includes a base and at least two correction fixtures. The at least two correction fixtures are configured to clamp, on the base, a framework of a metal mask which is used for evaporation on the base, the base has a first opening through which organic material passes, and the at least two correction fixtures are around the first opening in a spaced manner. During organic evaporation coating, the at least two correction fixtures on the mask carrier press the framework of the metal mask to prevent the framework from deformation. Thus, a clearance between a substrate and the metal mask is reduced or even eliminated after the substrate is in press-fit with surface of the metal mask. Patterns obtained through evaporation are clear in shape and outline and normal in size. Hence, the product yield is increased.

Abstract: A box coating apparatus for vacuum coating of substrates has a vacuum chamber containing an evaporation source and a substrate holder formed as a dome related to the evaporation source and rotatable about an axis. A masking arrangement is located in between for partially shadowing the substrates on the substrate holder relative to the evaporation source. The masking arrangement comprises a fixed masking portion stationary in the vacuum chamber, and a plurality of gradient sector portions carrying gradient shields assigned to the substrates on the substrate holder, for forming a gradient mask. The gradient sector portions can be rotated about the axis between a gradient mask open position where they are stored behind the fixed masking portion, and a gradient mask closed position where they are spread like a fan between the evaporation source and the substrate holder.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: Provided is a graphene synthesis apparatus including a chamber; a heating unit provided in the chamber; a heat conversion unit provided closer to a central portion of the chamber than the heating unit; and a catalyst provided on the heat conversion unit, wherein the catalyst is formed of thin and long metal.

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

Abstract: A vacuum evaporation device and system comprises a material container and a recycling structure, wherein a nozzle is arranged on the upper end surface of the material container; the recycling structure is arranged around the nozzle; and the recycling structure is configured to receive material when the material sprayed from the nozzle is fallen down. By arranging the recycling structure, the deposited material is received when it is fallen down, so that the nozzle is prevented from being clogged by the fallen material.

Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Abstract: A device for forming coatings on surfaces of a component, band-shaped material, or tool, in which at least one wire-shaped or band-shaped material is used for forming the coating and that is/are connected to a direct electrical current source, wherein an electric arc is formed between wire-shaped materials or between one wire-shaped or band-shaped material and one anode or cathode, wherein wire-shaped or band-shaped material may be fed by means of a feed device; and melted and/or evaporated material of the wire-shaped or band-shaped material flows, by means of a gas jet of a gas or gas mixture, through an inlet into the interior of a chamber that can be heated to a temperature that is at least equal to the evaporation temperature of the at least one material used for the coating or of the material with the highest evaporation temperature, and the material(s) completely evaporates and exits through at least one opening present on the chamber and impinges on the surface to be coated of the component or tool for

Abstract: The yield and quality of polysilicon rods produced in the Siemens process are increased by preventing pieces of silicon too large to be removed by flushing with gas from entering reaction gas inlets and offgas outlets by means of protective elements installed in the inlets and/or outlets.

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract: The invention relates to a compact thermal reactor for rapid growth of high quality carbon nanotubes (CNT2) produced by chemical process with low power consumption comprising: a processing chamber having a vacuum vessel, the vacuum vessel having a side cover formed of a first side wall and a second side wall, a top cover, a bottom cover connected to a support stand; feed through housing provided with a substrate; a heating system consisting of a heating element and back means; and at least one each inlet and outlet for gas injection into the process chamber for growing high quality carbon nanotubes over the substrate.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

Abstract: The present disclosure provides a baffle device for an evaporation apparatus and the evaporation apparatus. The baffle device includes a baffle assembly, configured to separate an evaporation ejection source from a substrate when the substrate is being switched in the evaporation apparatus; and at least one collection device, provided below the baffle assembly, and configured to collect evaporation material falling down from the baffle assembly.

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.