Abstract: The invention relates to an electrical circuit (1) for transmitting a useful analogue signal, which has a signal transmission path (16) with an input path (2) and an output path (3) and at least one switch (6), with which the useful signal which is carried on the input path (2) can be connected through to the output path (3) or the signal transmission path (16) can be interrupted. According to the invention, a compensation circuit (4) which substantially compensates for a distortion of the useful analogue useful signal generated by the at least one switch (6) when it is switched off (OFF) is provided, wherein the compensation circuit (4) is connected to a control terminal (G) of the at least one switch (6) and comprises at least one non-linear capacitance.

Abstract: A dual mode notch filter for use in a multi-band millimeter wave (mmW) transmitter includes a transmit filter circuit disposed between two amplifiers in a mmW transmit signal path, the transmit filter circuit formed by at least one switch, at least one capacitor, and a double-tuned transformer, the transmit filter circuit having at least two modes configured to selectively filter a spurious signal in at least a first communication band.

Abstract: A tamper-resistant actuator includes a valid input, configured to deliver an input electrical current through a circuit. A high-pass filter is positioned within the circuit that degrades components of the input electrical current that are outside of a predefined current range. Components that are within the predefined current range define an output current. A transistor activates a switch when the output current from the high-pass filter is received by the transistor.

Abstract: A rescue request apparatus (1) includes a radio communication unit (2) configured to perform radio communication, a trajectory acquisition unit (3) configured to acquire a movement trajectory of the rescue request apparatus when the radio communication cannot be performed by the radio communication unit (2), a user-state determination unit (4) configured to determine whether or not a user of the rescue request apparatus is in a dangerous state, and a drive control unit (5) configured to drive and control the rescue request apparatus so as to trace the movement trajectory acquired by the trajectory acquisition unit (3) when the user-state determination unit (4) determines that the user is in the dangerous state. The radio communication unit (2) transmits a rescue request signal to a pre-registered destination when the radio communication becomes possible.

Abstract: In a semiconductor switch, a resistance value between a current input terminal to which a current is input and a current output terminal from which a current is output decreases as a voltage of a control terminal based on a potential of the current output terminal increases. A booster circuit is disposed on a path extending from the current input terminal to the control terminal. The booster circuit boosts a voltage input from the current input terminal side and applies the boosted voltage to the control terminal. A switch is connected between the control terminal and the current output terminal of the semiconductor switch. The switch is switched off by power consumption. The power consumption stops and the switch switches on if the supply of power to the booster circuit stops.

Abstract: A low voltage attack detector includes: a low voltage detector configured to output a low voltage detection flag signal having a high level when a first power supply voltage reaches a first voltage level using a bandgap reference (BGR) circuit including a PMOS transistor and a first bipolar junction transistor (BJT) connected in series between the first power supply voltage and a second power supply voltage; a BGR operation region detector configured to output a malfunction detection flag signal having a high level when the first power supply voltage reaches a second voltage level lower than the first voltage level; and a logic gate configured to output a final low voltage detection flag signal having a high level when at least one of the low voltage detection flag signal and the malfunction detection flag signal has a high level.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: A relay circuit may include a solid state relay switch, coupled to an external voltage line and to an charging capacitor; and a solid state relay control circuit, coupled between the charging capacitor and the solid state relay switch. The solid state relay control circuit may be arranged to: turn the solid state relay switch to an OFF state when a capacitor voltage of the charging capacitor falls below a low threshold value; and change the solid state relay switch from the OFF state to an ON state when the capacitor voltage increases above a high threshold value.

Abstract: A driving apparatus drives a load. An N-channel MOSFET is disposed downstream of the load on a current path of a current that flows via the load. A circuit resistor is connected between a direct current power source and the gate of the MOSFET. A first switch is connected between the gate and the source of the MOSFET. A microcomputer outputs a voltage relative to a potential at an output terminal of a second switch to a control terminal of the second switch. As a result, the second switch is turned ON or OFF. A switching circuit turns the first switch ON when the second switch is turned ON and turns the first switch OFF when the second switch is turned OFF.

Abstract: A power supply control device controls power supply by switching on or off a first semiconductor switch and a second semiconductor switch that are arranged on a current path. A first diode and a second diode are connected between a drain and a source of the first semiconductor switch and the second semiconductor switch, respectively. Cathodes of the first diode and the second diode are arranged downstream and upstream of the respective anode on the current path. If current flows through the current path even though a microcomputer has given an instruction to switch the first semiconductor switch and the second semiconductor switch off, a first drive circuit switches the first semiconductor switch on.

Abstract: A positive-logic FET switch stack that does not require a negative bias voltage, exhibits high isolation and low insertion/mismatch loss, and may withstand high RF voltages. Embodiments include a FET stack comprising series-coupled positive-logic FETs (i.e., FETs not requiring a negative voltage supply to turn OFF), series-coupled on at least one end by an “end-cap” FET of a type that turns OFF when its VGS is zero volts. The one or more end-cap FETs provide a selectable capacitive DC blocking function or a resistive signal path. Embodiments include a stack of FETs of only the zero VGS type, or a mix of positive-logic and zero VGS type FETs with end-cap FETs of the zero VGS type. Some embodiments withstand high RF voltages by including combinations of series or parallel coupled resistor ladders for the FET gate resistors, drain-source resistors, body charge control resistors, and one or more AC coupling modules.

Abstract: An apparatus, including a first circuit containing an ignition system and first load which first load does not draw current from a first battery when the ignition system is not operating; a second circuit containing a second load which draws current from a second battery when the ignition system is not operating; a first switch capable of disconnecting the first battery from the first circuit; a second switch capable of connecting the first battery to the first circuit, wherein the first switch or second switch disconnects the ignition system from the first battery when the first switch or second switch is opened, wherein the first switch and second switch connect the first battery to the ignition system when the first switch and second switch are closed; and at least one alternator capable of recharging the first battery and second battery when the ignition system is operating.

Abstract: A method for controlling a high-power drive device includes providing a current having a first predetermined current level to an output node during a first phase of a multi-phase turn-on process for the high-power drive device coupled to the output node. The method includes transitioning from the first phase to a second phase of the multi-phase turn-on process based on a first indication of a sensed voltage level on the output node during the first phase and a second indication of a time elapsed from a start of the first phase during the first phase. The method includes providing the current having a second predetermined current level to the output node during the second phase.

Abstract: An electronic solid-state switch assembly includes a base plate and a heat exchanger; an electrically insulating layer and a direct bonded substrate affixed to the base plate; a first terminal and a second terminal; a plurality of power transistors; a plurality of gate drivers; a communication interface, a current sensor, and a snubber circuit; and a controller. The plurality of gate drivers are operatively coupled to the plurality of power transistors. The plurality of power transistors are arranged in parallel on the direct bonded substrate between the first terminal and the second terminal. The plurality of power transistors are electrically connected to the first terminal and to the second terminal. The controller is in communication with the plurality of gate drivers, the current sensor, and the communication interface. The controller is configured to control, via the plurality of gate drivers, the plurality of power transistors.

Abstract: Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.

Abstract: An acoustic wave filter includes a first resonance circuit including a first series arm resonator and a first capacitive element. The first series arm resonator is provided on a path connecting a first terminal and a second terminal. The first capacitive element is coupled in parallel with the first series arm resonator. The first series arm resonator includes a first divided resonator and a second divided resonator coupled in series with each other. The first resonance circuit includes a second resonance circuit including the first divided resonator and a second capacitive element coupled in parallel with the first divided resonator.

Abstract: A high-side driver circuit is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection-capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, a temperature compensation layer positioned over the interdigital transducer electrode, and a velocity reduction cover that extends over at least a portion of a central region of the interdigital transducer electrode and over at least a portion of the temperature compensation layer. The velocity reduction cover is arranged to cause a velocity of an acoustic wave generated by the acoustic wave resonator to be reduced.

Abstract: A filter device according to an embodiment of the present disclosure includes a first filter and a second filter that are connected in parallel between a first terminal and a second terminal. The first filter includes multiple series arm resonators. The series arm resonators are disposed in series in a path from the first terminal via the first filter to the second terminal. The series arm resonators include a first series arm resonator and a second series arm resonator. Under a condition that a value obtained by dividing a difference between an antiresonance frequency and a resonance frequency of each series arm resonator by the resonance frequency is defined as a fractional bandwidth, a first fractional bandwidth of the first series arm resonator is different from a second fractional bandwidth of the second series arm resonator.

Abstract: To provide a mobile phone which can be used without hampering convenience in a condition where functions of the mobile phone are switched and can improve operability. The mobile phone includes an optical sensor, a display element, a pixel circuit portion where a plurality of pixels having a plurality of transistors are arranged in matrix, an optical sensor control circuit which is connected to an optical sensor driver circuit for driving the optical sensor and reads a signal from the optical sensor, a display portion control circuit which is connected to a display element driver circuit for driving the display element and outputs an image signal for displaying an image on a display portion, a gradient detection portion for outputting a signal in accordance with a gradient of the mobile phone, and an arithmetic circuit for performing display in the pixel circuit portion by switching image signals output to the display portion control circuit with a signal from the gradient detection portion.