Abstract: In a system for processing gas, a gas analyzer in a gas analyzer chamber measures a quantity of ions generated from a gas. An ionization source includes an ionization chamber and an electron source for generating ions for the gas analyzer. The ionization chamber encompasses an ionization region in which particles of the gas are charged to form the ions. A channel directs the gas from a gas source into the ionization chamber, and the channel extends to a surface of the ionization chamber. An ionization source vacuum pump is in gaseous communication with the ionization chamber via a substantially large opening, and operates to draw gas from the ionization chamber.

Abstract: A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Abstract: An ion guide defining a guide axis receives ions. The ion guide applies a potential profile that includes a pseudopotential well to the ions using an ion control field. The ion control field includes a component for restraining movement of the ions normal to the guide axis and a component for controlling the movement of the ions parallel to the guide axis. The ion guide sequentially injects the ions with the same ion energy and in decreasing order of m/z value into an ELIT aligned along an ELIT axis to focus the ions irrespective of m/z value at the same location on the ELIT axis within the ELIT at the same time by varying a magnitude of the pseudopotential well. The ELIT can trap the focused ions using in-trap potential lift or mirror-switching ion capture.

Abstract: A method of identifying and/or characterising ions comprises separating analyte ions according to a first physico-chemical property (ion-mobility), selecting first ions of the analyte ions, and activating, fragmenting or reacting the first ions to produce first product ions, separating the first product ions according to the first physico-chemical property, and determining a pattern of the first product ions. The first ions are identified and/or characterised using the pattern of the first product ions.

Abstract: A biological protection for closing an opening in a wall delimiting a radiation zone, this protection comprising at least one iris diaphragm with a base in the form of a flat disk carrying petals formed by plates having a triangular contour and made of a material protecting against ionising radiation. These petals are movable parallel to the base between an open state in which the petals delimit together a central aperture and a closed state in which the petals are closely joined to form together a continuous closed wall.

Abstract: The present disclosure is directed at an antibody conjugate having an antibody and a tag, wherein one or more element(s) present in the antibody exhibit an isotope ratio which differs from the naturally occurring isotope ratio of the one or more element(s), wherein the amount of the isotope which is less-common in nature, is increased to at least 4% of the atoms of the respective element in the antibody, as well as uses thereof.

Abstract: In an analyzer, an image processing unit performs processing of: dividing a measurement image into a plurality of partial measurement images, and dividing a reference image into a plurality of partial reference images; calculating a positional deviation amount of each of the partial measurement images relative to a corresponding partial reference image among the partial reference images; determining whether the positional deviation amount is a threshold or less; and correcting positional deviation of the measurement image based on the positional deviation amounts of the plurality of partial measurement images when the image processing unit has determined that the positional deviation amount is not the threshold or less.

Abstract: Imaging by cryo-electron microscopy (cryo-EM) requires that a sample be encased in an amorphous solid, such as amorphous ice. In current cryo-EM preparation systems, once the sample has been deposited on an EM grid and coated in the amorphous solid, the EM grid must be removed from vacuum and then transferred into the vacuum of the cryo-EM system. As a result, samples deposited on the grid are exposed to damage and contamination. The present invention provides improved EM grid handling systems and devices compatible with advanced cryo-EM sample preparation techniques and which reduce or eliminate exposure of the sample on the grid to atmosphere and elevated temperatures. These methods and devices will also significantly reduce handling time and complexities associated with cryo-EM sample preparation.

Abstract: A dissociation device fragments a precursor ion, producing at least two different product ions with overlapping m/z values in the dissociation device. The dissociation device applies an AC voltage and a DC voltage creating a pseudopotential that traps ions below a threshold m/z including the at least two product ions. The dissociation device receives a charge reducing reagent that causes the trapped at least two product ions to be charge reduced until their m/z values increase above the threshold m/z set by the AC voltage. The increase in the m/z values of the at least two product ions decreases their overlap. The at least two product ions with increased m/z values are transmitted to another device for subsequent mass analysis by applying the DC voltage to the dissociation device relative to a DC voltage applied to the other device.

Abstract: An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.

Abstract: A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

Abstract: An ion detection current conversion circuit includes a conversion amplifier coupled with a conversion resistor assembly for converting an ion detection current produced by an ion detector into an ion detection voltage, the conversion resistor assembly comprising a resistor having a high resistance and a capacitive compensation element, and a compensation voltage circuit for deriving a compensation voltage from the ion detection voltage and feeding the compensation voltage to the capacitive compensation element, the compensation voltage circuit comprising a variable resistor for adjusting the compensation voltage.

Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

Abstract: Certain configurations of plasma discharge chambers and plasma ionization sources comprising a plasma discharge chamber are described. In some examples, the discharge chamber comprises a conductive area and is configured to sustain a plasma discharge within the discharge chamber. In other examples, the discharge chamber comprises at least one inlet configured to receive a plasma gas and at least one outlet configured to provide ionized analyte from the discharge chamber. Systems and methods using the discharge chambers are also described.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, and a reflective mirror. The vessel has an exit aperture. The laser source is at one end of the vessel and configured to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The reflective mirror is in the vessel and configured to reflect the laser beam toward an edge of the vessel.

Abstract: A pulse shaping circuit for a spectrometer comprises a circuit input terminal for receiving detector pulses from an analog ion detector, a flip-flop for receiving detector pulses from the circuit input terminal, a delay unit for receiving output pulses from the flip-flop and feeding delayed output pulses to a reset input terminal of said flip-flop, and a circuit output terminal for supplying the output pulses or the delayed output pulses to a counter. The duration of the output pulses and the minimum duration of the interval between the output pulses is determined by the delay unit. The pulse shaping circuit may comprise at least one Schmitt trigger.

Abstract: The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.