Abstract: Pulse-position synchronized deposition of a material in miniature structure manufacturing processes is carried out in a fabrication tool including a material carrier element, a source of energy generating pulses of energy, a substrate, and a control unit operatively coupled to the source of energy, substrate, and the material carrier element. The control unit exposes a first area of the material carrier element to a first pulse of energy, pauses the exposure while initiating relative motion between the source of energy and the substrate at a predetermined first speed and relative motion between the material carrier element and the energy source at a predetermined second speed which is a function of the first speed, and slowing (or stopping) relative motion between the energy source, material carrier element, and the substrate, while exposing the unablated area of the material carrier element adjacent to previously ablated area to a second pulse of energy.

Abstract: The surface of a substrate is coated with an abrasion-resistant photocatalytic coating comprised of a semiconductor photocatalyst. upon irradiation by a light having a wavelength of an energy higher than the bandgap energy of the photocatalyst, water is chemisorbed onto the surface in the form of hydroxyl groups (OH−) whereby the surface of the photocatalytic coating is rendered highly hydrophilic. In certain embodiments, the surface of a mirror, lens, or windowpane is coated with the photocatalytic coating to exhibit a high degree of antifogging function. In another embodiment, an article or product coated with the photocatalytic coating is disposed outdoors and the highly hydrophilic surface thereof is self-cleaned as it is subjected to rainfall. In a still another embodiment, an article is coated with the photocatalytic coating and, when the article is soaked in, rinsed by or wetted with water, fatty dirt and contaminants are readily released without resort to a detergent.

Abstract: The present invention is a grafted polymer electrolyte membrane prepared by first preparing a precursor membrane comprising a polymer which is capable of being graft polymerized, exposing the surface of the precursor membrane to a plasma in an oxidative atmosphere, then graft-polymerizing a side chain polymer to the plasma treated precursor membrane and introducing a proton conductive functional group to the side chain. The resulting grafted polymer electrolyte membrane has excellent stability and performance when used in a proton-exchange membrane fuel cell or for electrolysis of water.

Abstract: A substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20. A radiation source 58 provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector 62 is provided to detect the reflected radiation and generate a signal. A controller 100 is adapted to receive the signal and determine a property of the substrate 20 in situ during processing, before an onset of during or after processing of a material on the substrate 20.

Abstract: A discharge electrode comprising a material having solid lubricant effect, such as molybdenum, is used to generate discharge in a pulse form between the discharge electrode and a workpiece, the surface of which is to be treated, in working liquid containing carbon components, such as water. Material consumed or melted from the discharge electrode, generated because of the electric discharge energy based on the pulse form discharge, gets adhered to and deposited onto a surface of the workpiece thereby forming a coat having lubricant effect on the surface of the workpiece.

Abstract: The invention relates to a method for preparing a conductive electrode comprising applying a precursor for electrocatalytic or protective coatings on a conductive electrode substrate, irradiating the conductive electrode substrate and the precursor with near infrared (NIR) radiation to form an electrocatalytic or protective coating on the electrode substrate. The invention also relates to an electrode substrate or electrode obtainable by the method, and the use thereof.

Abstract: The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors.

Abstract: To provide a chemical amplification type resist composition which is excellent in transparency to a radiation and in dry etching properties and which gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc. A resist composition comprising a fluoropolymer (A) which is a fluoropolymer having repeating units formed by cyclopolymerization of a fluorinated diene represented by the formula (1) and which has blocked acidic groups as Q, an acid-generating compound (B) which generates an acid under irradiation with light, and an organic solvent (C): CF2═CR1—Q—CR2═CH2  (1) wherein each of R1 and R2 which are independent of each other, is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group, and Q is a bivalent organic group having a blocked acidic group capable of forming an acidic group by an acid or a group which can be converted to such a blocked acidic group.

Abstract: Porous organic articles having no surface functionality may be treated by remote plasma discharge to thereby introduce functionality to the surface of the article. The functionality is introduced throughout the article's surface, including the exterior surface and the surfaces of the pores. Little or no degradation of the porous organic article occurs as a result of the functionalization. Amino, hydroxyl, carbonyl and carboxyl groups may be introduced to the article. In this way, an essentially inert hydrophobic porous article, made from, for example, polyethylene, can have its surface modified so that the surface becomes hydrophilic. The remote plasma discharge process causes essentially no change in the bulk properties of the organic article. The remote plasma discharge process is preferably conducted so that no photons, and particularly no ultraviolet radiation, is transmitted from the plasma glow to the porous article.

Abstract: The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.

Abstract: A method of coating a substrate comprises the steps of applying a coating composition to selected areas of the substrate. The coating composition comprises a mixture including at least a reactive part. The reactive part comprises between 30% and 100% multi-functional material, and is photoinitiator free. The coated substrate is exposed, in a curing zone, to ultra-violet light from at least one lamp which has a power output of at least 140 watts per linear centimeter. The ultra-violet light initiates curing of the coating. A substantially inert atmosphere is maintained in the curing zone where the substrate is exposed to the ultra-violet light.

Abstract: A process for forming a thin metal oxide film is disclosed that comprises molding an amorphous powder of organic metal chelate complexes to obtain a target. The process also includes subjecting the target to a PVD process that forms the thin metal oxide.

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.

Abstract: This invention relates to metallurgy and machine building, more specifically to the development of a method that improves service life, durability and repair of machine components by applying coatings to working surfaces followed by special treatment of the surfaces. The essence of the invention is deposition of erosion and corrosion resistant coatings on machine components, that comprises a plurality of microlayers wherein each of the microlayers comprises one or more elements selected from the transition metal group, solid solutions or interstitial phases based thereon, and wherein one or more of the microlayers is subjected to high energy non-metallic ion deposition that causes changes in structure and composition of the deposited microlayer thus improving performance characteristics. After the full coating has been deposited, a vibromechanical treatment with micro-pellets is applied to the surface of machine components, that improves distribution of residual stresses.

Abstract: A green-compact electrode (1) for discharge surface treatment for use in a discharge surface treatment operation for forming a hard coating film (9) on the surface of an object (2) which must be machined by performing a discharging operation in working fluid (4) is structured such that powder (11) made of metal, such as W or Ti, and fluid (12) which is the same as working fluid are mixed with each other, and the mixed substance is compression-molded so that the green-compact electrode (1) for the discharge surface treatment is obtained.

Abstract: A method and arrangement for producing a boride layer on a surface by plasma boronizing includes supplying a gas mixture containing a boron-releasing gas to a reactor and generating a glow discharge in the reactor using a pulsed DC voltage. The parameters of the production of the plasma produced by the glow discharge in a treatment chamber of the reactor are selected so that an increased quantity of excited boron particles is generated in the plasma to produce non-porous boride layers, for example, for boride coating of components which need a surface that is highly resistant to wear, for example, gears, camshafts and the like. Parameters with which the production of the boride layer can be controlled are, for example, voltage, pulse-duty factor, frequency, temperature, treatment chamber pressure during the production of the plasma, and the content of boron-releasing gas and of the remaining components in the gas mixture which is fed to the reactor.

Abstract: A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.

Abstract: A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.

Abstract: In a case where a CF film is used as an interlayer dielectric film of a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, F gases are desorbed from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, thermostability is enhanced. A compound gas of C and F, e.g., C4F8 gas, and a hydrocarbon gas, e.g., C2H4 gas, are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer 10 using active species thereof. Then, Ar gas serving as a sputtering gas is introduced to be activated as plasma, and the CF film deposited on the wafer 10 is sputtered with the Ar plasma. If the thin-film deposition process and the sputtering process are alternately repeated, weak bonds existing in the CF film are removed by sputtering.

Abstract: In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability. A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.