Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

Abstract: Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.

Abstract: A light based treatment device comprises an optical arrangement at a light exit end of an optical fiber. The optical arrangement includes a master oscillator power amplifier based on a semiconductor optical laser and a crystal optical amplifier. In this way, the peak power provided along the optical fiber can be reduced to prevent damage to the optical fiber, while enabling a sufficiently high pulse power to be delivered for tissue treatment.

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

Abstract: A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Abstract: An optical member includes a conversion member including a first surface that serves as a light-irradiated surface or a light extraction surface, and adapted to convert laser light, which is an excitation light, into light having a wavelength different from a wavelength of the excitation light; a holding member holding the conversion member and including a second surface that is continuous with the first surface of the conversion member; and a wiring having an elongated shape and extending continuously along the first surface of the conversion member and the second surface of the holding member.

Abstract: Stimulated Brillouin scattering (SBS) limits the maximum power in fiber lasers with narrow linewidths. SBS occurs when the power exceeds a threshold proportional to the beam area divided by the effective fiber length. The fiber lasers disclosed here operate with higher SBS power thresholds (and hence higher maximum powers at kilohertz-class linewidths) than other fiber lasers thanks to several techniques. These techniques include using high-absorption gain fibers, operating the laser with low pump absorption (e.g., ?80%), reducing the length of un-pumped gain fiber at the fiber output, foregoing a delivery fiber at the output, foregoing a cladding light stripper at the output, using free-space dichroic mirrors to separate signal light from unabsorbed pump light, and using cascaded gain fibers with non-overlapping Stokes shifts. The upstream gain fiber has high absorption and a larger diameter for high gain, and subsequent gain fiber has a smaller diameter to improve beam quality.

Abstract: External cavity diode laser (ECDL) devices and methods for producing the same are described that allows ECDLs to be readily produced and configured to operate at a desired range of wavelengths, while allowing tunability of the output wavelength. One ECDL includes a laser gain chip including a gain medium, a first reflective surface at a first end of the gain medium, and a second surface at a second end of the gain medium opposite to the first reflective surface. The second surface has a facet that forms an angle approximately equal to Brewster's angle for light having a first wavelength. The ECDL further includes a diffraction grating positioned to receive light that passes through the second surface, to operate as a mirror in the external cavity diode laser, and to allow a portion of the light to be directed outside of the external cavity diode laser as output light.

Abstract: The ultrafast pulse fiber laser system is configured with scalable output power and operative to reduce degradation of pulse integrity. The disclosed laser system is configured to suppress the pulse distortion through improvement of initial pulse contrast between main and side pulses and improved pulse shape using chirped pulse amplification and a fast intensity modulator driver by a corrected electrical signal that is generated from the original optical signal. The structure providing the improvement includes the photodiode, which is operative to measure the chirped optical pulse and convert it to the electrical signal, and analog electronics that quickly converts the electrical signal to the required signal that suppress the side pulses.

Abstract: One illustrative laser disclosed herein includes a gain medium layer having a first width in a transverse direction that is orthogonal to a laser emitting direction of the laser, and an upper light-confining structure positioned above an upper surface of the gain medium layer, wherein the upper light-confining structure has a second width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0. The laser also includes a lower light-confining structure positioned below a lower surface of the gain medium layer, wherein the lower light-confining structure has a third width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0.

Abstract: Embodiments of the present disclosure may relate to a digitized grating that may include a first unit cell that has a first period and a first length, where the first period includes a first grating element width and a first space between adjacent grating elements, and where the first length includes a number of first periods. The digitized grating may further include a second unit cell that has a second period and a second length, where the second period is different than the first period and includes a second grating element width and a second space between adjacent grating elements, and where the second length includes a number of second periods.

Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: An ultrafast mode-locked laser comprising circuitry configured to drive an electro-optic modulator (EOM) in the mode-locked laser with a drive waveform, the drive waveform being a phase-coherent sinusoidal waveform at a frequency equal to a repetition rate of the mode-locked laser, a phase-coherent pulsed waveform at a frequency equal to the repetition rate of the mode-locked laser, or a phase-coherent sinusoidal waveform at a frequency equal to half of the repetition rate of the mode-locked laser.

Abstract: The present invention relates to a technical field of optical communications. It relates to a dual-rate DML device and module, and a calibration method, and in particular, to a dual-rate DML device and module having a built-in signal calibration circuit, and a calibration method. According to the present invention, the signal calibration circuit is added into the device; a PD is prepositioned by means of a novel light splitting structure; a control structure for a sequence-divided multi-channel serial signal is utilized to feed back a monitoring signal to an electric driver to adjust drive current; crosstalk between backlight monitoring is reduced; and high-quality signal output under dual modulation frequencies of 25 Gbps and 28 Gbps is realized.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.

Abstract: A laser source apparatus (100) for generating temporal dissipative cavity solitons (1) comprises an input source-device (10), being configured for providing an input light field (2), and an optical resonator device (20) with a resonator (21) having a third order optical Kerr non-linearity and being coupled with the input source device (10) for generating the cavity solitons (1) by the driving input light field (2), wherein the input source device (10) is configured for providing the input light field (2) as a pulse train of laser pulses (3). Preferably, the pulse repetition rate of the input laser pulses (2) is adapted to the free spectral range of the resonator (21) and the carrier envelope offset frequency of the input laser pulses (2) is adapted to one of the resonant frequencies of the resonator (21). Furthermore, a method of generating temporal dissipative cavity solitons (1) is described.