Abstract: A method of manufacturing a semiconductor device includes: providing a package; providing a mounting substrate; providing at least one first bonding member disposed at a position connecting at least one first metal surface of the package and at least one first metal pattern of the mounting substrate; providing a second bonding member connecting at least one second metal surface of the package and at least one second metal pattern of the mounting substrate; and heating the at least one first bonding member and the at least one second bonding member at a temperature equal to or higher than both a bonding temperature of the at least one first bonding member and a bonding temperature of the at least one second bonding member, to bond the package and the mounting substrate together.

Abstract: To provide an illumination device, a control device, and a control method enabled to perform control to cause output of each of a plurality of light sources to be constant with a more simplified temperature control circuit. There is provided an illumination device including: a plurality of light sources; a plurality of cooling units respectively provided for the light sources and respectively cooling the light sources; and a drive control unit that performs switching of control with respect to each of the light sources on the basis of a comparison between a target temperature of each of the light sources and a measured temperature of each of the light sources or an environment.

Abstract: Various embodiments of the present disclosure are directed towards a vertical cavity surface emitting laser (VCSEL) device. The VCSEL device includes a bond bump overlying a substrate. A VCSEL structure overlies the bond bump. The VCSEL structure includes a second reflector overlying an optically active region and a first reflector underlying the optically active region. A bond ring overlying the substrate and laterally separated from the bond bump. The bond ring continuously extends around the bond bump.

Abstract: A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.

Abstract: An optical module includes a circuit board, an optical fiber, an optical fiber monitoring chip, a laser chip, a laser driving chip and a lens assembly. A bottom surface of the lens assembly is covered above the laser chip and the optical monitoring chip. A groove is on a top surface of the lens assembly. A bottom of the groove protrudes to form a first interface and a second interface. The laser chip is configured to emit light. The first interface is configured to reflect the emitted light to obtain first reflected light. The second interface is configured to reflect a portion of the first reflected light to obtain a second reflected light and refract another portion of the first reflected light to obtain a first refracted light. The second reflected light is transmitted to the optical monitoring chip. The first refracted light is transmitted to the optical fiber.

Abstract: A laser device that is easily assembled and can be manufactured at low cost and a light-source device using the same are provided. The laser device includes a base plate portion, a semiconductor laser element placed on the base plate portion, a lid portion provided on the base plate portion, on which the semiconductor laser element is placed, and including a top plate, and a side wall portion covering a part or all of lateral sides of a space between the base plate portion and the top plate. The top plate is integrally formed with a part or all of the side wall portion.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

Abstract: A light source device includes: a plurality of laser light sources, each configured to emit a light beam; a plurality of collimating lenses, each configured to collimate the light beam emitted from a corresponding one of the laser light sources; a first transmission diffraction grating configured to diffract and combine, in an identical diffraction angle direction, the light beams transmitted through the collimating lenses and incident on a single region at different incident angles; a sensor configured to detect a positional deviation in diffracted light beams that are diffracted and combined by the first transmission diffraction grating; and a plurality of wavelength selecting elements, each disposed on an optical path between a respective one of the collimating lenses and the first transmission diffraction grating and configured to select a wavelength of a corresponding one of the light beams incident on the first transmission diffraction grating.

Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

Abstract: A distance measurement apparatus includes a light emission circuit that includes a switch, a capacitor, a light-emitting element, and a protection element. The light emission circuit charges and discharges the capacitor by opening and closing the switch based on a light emission control signal, and enables the light-emitting element to emit light using electric power during discharge by the capacitor. The light emission circuit is configured such that a parasitic inductance of a first circuit is greater than a parasitic inductance of a second circuit, where the first circuit is a circuit in which the switch, the capacitor, and the light-emitting element are connected in series and in a ring shape, and the second circuit is a circuit in which the switch, the capacitor, and the protection element are connected in series and in a ring shape.

Abstract: The present disclosure discloses a narrow-linewidth laser. The narrow-linewidth laser comprises a passive ring waveguide, a first passive input/output waveguide which is coupled with the passive ring waveguide, a gain wavelength-selection unit which is used for providing gain for the whole laser and is configured to be capable of selecting the light with a specific wavelength to be coupled into the passive ring waveguide, and a second passive input/output waveguide which is coupled with the passive ring waveguide in order to output lasing light from the laser. The narrow-linewidth semiconductor laser provided by the present disclosure has a simple structure and does not have butt-joint coupling loss between a gain region and a waveguide external cavity region. There is no a linewidth limitation caused by butt-coupling loss in such semiconductor lasers.

Abstract: A laser diode surface mounting structure, having at least one edge-emitting laser diode chip, including two electrodes; a heat-dissipating plate for carrying one of the two electrodes of the at least one edge-emitting laser diode chip, which has a top conductive layer, a bottom conductive layer, and at least one conductive through hole extending from the top conductive layer to the bottom conductive layer for electrically conducting; two or more metal plates spaced apart from each other and located on a plane, wherein a first metal plate is located under the heat-dissipating plate and in contact with the bottom conductive layer of the heat-dissipating plate, and a second metal plate is located adjacent to and separated from the first metal plate; and an insulating frame having an opening and being disposed above the two or more metal plates for holding the two or more metal plates.

Abstract: A laser apparatus calculates a temperature of a temperature increase portion that is raised in temperature by reflection light, and determines and outputs an emergency optical output command with the aim of ensuring that the calculated temperature does not exceed a first predetermined temperature, which is set at a lower temperature than an upper limit heat resistance temperature, and if necessary, controlling the temperature to or below a second predetermined temperature set at a lower temperature than the first predetermined temperature. When the emergency optical output command is to be output, a control unit switches an optical output command output thereby to the emergency optical output command and outputs the emergency optical output command.

Abstract: A light source device includes at least one first wiring, a plurality of second wirings, a plurality of light emitting elements each having a lower-surface-side electrode connected to a respective one of the at least one first wiring, a plurality of protective elements each having a lower-surface-side electrode connected to a respective one of the plurality of second wirings each corresponding to a respective one of the plurality of light emitting elements, each of the plurality of protective elements connected to a respective one of the plurality of light emitting elements, a plurality of first wirings each connecting an upper-surface-side electrode of each of the plurality of light emitting elements and a respective one of the plurality of second wirings, a plurality of second wires each connecting the upper-surface-side electrodes of two adjacent ones of the protective elements; and a plurality of third wires each connecting an upper-surface-side electrode of a respective one of the plurality of protective

Abstract: The present disclosure provides a vertical-cavity surface-emitting laser, structured light module, terminal comprising the structured light module, and method for projecting the structured light thereof. The structured light module includes a plurality of light sources and a single diffractive optical element (DOE); wherein the plurality of light sources simultaneously emit a plurality beams of invisible light to the single DOE, wherein the single DOE has a pseudo-random optical pattern groove, wherein the invisible light of each light source passes through the DOE and emits a beam of spectral encoded structured light, and the beam of structured light comprises a pattern corresponding to the pseudo-random optical pattern groove. The DOE projects an overall structured light that is formed by superimposing a plurality of beams of structured light, and there is an offset between patterns of different beams of structured light.

Abstract: A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

Abstract: A laser arrangement includes a VCSEL array comprising multiple VCSELs arranged on a common semiconductor substrate, an optical structure, and a diffusor structure. The optical structure is arranged to reduce a divergence angle of laser light emitted by each respective VCSEL to a section of the diffusor structure assigned to the respective VCSEL. The diffusor structure is arranged to transform the laser light received from the optical structure to transformed laser light such that a continuous illumination pattern is configured to be provided in a reference plane in a defined field-of-view. The diffusor structure is arranged to increase a size of the illumination pattern in comparison to an untransformed illumination pattern which can be provided without the diffusor structure. The VCSEL array, optical structure, and diffusor structure are arranged such that sections of the diffusor structure do not overlap. Diffusor properties of the diffusor structure vary across the diffusor structure.

Abstract: Depolarized fiber lasers and respective methods are provided for increasing the SBS (stimulated Brillouin scattering) threshold. The laser source is constructed by a frequency-broadened seed source having a frequency bandwidth of less than 50 GHz, and the depolarization of the seed source is carried out at time scales shorter than 10 ns. At least one amplifier is configured to receive and amplify radiation from the frequency-broadened seed source and deliver the amplified radiation in the optical fiber. Depolarization may be achieved in various ways (e.g., using an interferometer with added length to one arm) and is kept at time scales shorter than tens of nanoseconds, typically shorter than 5-10 ns, which distinguish it from random polarization having polarization changes at longer time scales. Polarization maintaining fibers may be used to further increase the SBS by separating the polarizations states.

Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

Abstract: A design and method for introducing asymmetric crystal strain to control polarization in a tunable VCSEL, either optically or electrically pumped. The invention is especially relevant to wafer- or die-bonded tunable VCSELs. Then, mechanical stress is applied to the half VCSEL device by asymmetric arrangement of metal bond pads.