Abstract: A method for ALD coating of a substrate with a layer containing Ti, Si, N, wherein a reaction gas and then a flushing gas are introduced into a process chamber holding the substrate in a plurality of successive steps, each in one or more cycles, wherein TiN is deposited in a first step with a reaction gas containing Ti and a reaction gas containing N, TiSi is deposited in a second step with a reaction gas containing Ti and a reaction gas containing Si, and in a third step following the second step, TiSiN is deposited with a reaction gas containing Ti, with a reaction gas containing N and with a reaction gas containing Si.

Abstract: The disclosure concerns a method for manufacturing a device for forming at least one focused beam in a near zone, from an electromagnetic wave incident on said device. The method includes depositing a dielectric material layer with a first refractive index on a substrate layer, creating at least one cavity by a microfabrication technique in the dielectric material layer, the device for forming at least one focused beam in a near zone of the substrate layer (110) and the dielectric material layer, filling the at least one cavity with a material having a second refractive index lower than the first refractive index, determining a deviation between a measured focused beam radiation angle obtained from the device for forming at least one focused beam in a near zone and an expected focused beam radiation angle and modifying locally at least one of the two refractive indexes according to the deviation.

Abstract: A process for depositing a coating on a continuous carbon or silicon carbide fibre from a coating precursor, includes at least heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature enabling the coating to be formed on the segment from the coating precursor.

Abstract: An apparatus for cleaning a mask includes a chamber in which material deposition is performable on a substrate using the mask, the chamber including a transmission window through which light used in cleaning the mask within the chamber is irradiated into the chamber from outside thereof; within the chamber: a stage on which the substrate is disposed, the stage disposed in a plane defined by first and second directions crossing each other; and a material deposition unit from which a deposition material is provided to the substrate; and a light irradiation unit from which is provided the light used in cleaning the mask within the chamber. The light irradiation unit is disposed outside the chamber and irradiates the light into the chamber through the transmission window. The material deposition unit disposed within the chamber and the light irradiation unit disposed outside the chamber are reciprocally movable in the first direction.

Abstract: The invention is related to a method for producing soft contact lenses comprises a silicone hydrogel lens body and a composite coating thereon. The composite coating comprises: a plasma base coating which is chemically-attached directly onto the surface of the silicone hydrogel contact lens and functions as a fail-proof measure for ensuring the hydrophobic silicone hydrogel lens material to be shielded from any exposure to ocular environments even after at least 30 days of daily uses including daily waring and daily cleaning/disinfecting; and a relatively-durable lubricious hydrogel top coating for ensuring wearing comfort.

Abstract: Disclosed are a method for producing an optical thin film having a low refractive index, a thin film forming material, an optical thin film, and an optical member. The method for producing an optical thin film includes forming a vapor deposition film by depositing a thin film forming material on an object in a non-oxidizing atmosphere by a physical vapor deposition method; and bringing the vapor deposition film into contact with a first acidic solution comprising an acidic substance in a range of pH 2.5 or more and pH 3.5 or less to obtain a first thin film having voids, wherein the thin film forming material is a mixture comprising indium oxide and silicon oxide, in which the indium oxide is in a range of 0.230 mol or more and 0.270 mol or less with respect to 1 mol of the silicon oxide.

Abstract: The present invention relates to a method for manufacturing semiconductor manufacturing parts used in a dry etching process, and a jig usable therein, and the method for manufacturing semiconductor manufacturing parts by using the jig, of the present invention, comprises the steps of: preparing a base material; supporting at least one surface of the base material by the jig; forming a deposition layer by spraying source gas on the base material supported by the jig; and processing the base material on which the deposition layer is formed, wherein the jig has a tapered cross-section of which the width increases in the direction of approaching the surface of the base material.

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).

Abstract: The percentage of a height of each undulation with respect to a length of the undulation is a unit steepness. A steepness is an average value of unit steepnesses of all undulations in a longitudinal direction at each of different positions in a width direction of a metal sheet. The maximum value of steepnesses in a center section in the width direction is less than or equal to 0.3%. The maximum value of steepnesses in a first edge in the width direction and a maximum value of steepnesses in a second edge section in the width direction are less than or equal to 0.6%. The maximum value of steepnesses in at least one of the first edge section and the second edge section in the width direction is less than the maximum value of steepnesses in the center section in the width direction.

Abstract: A method of forming a composite article may generally comprise forming a mixture of (i) a reactant gas stream comprising hydrogen and methyltrichlorosilane and (ii) solid silicon carbide particles; heating a carbon substrate in the reactor; heating the mixture of the reactant gas stream and solid silicon carbide particles to decompose the methyltrichlorosilane to produce silicon carbide material without causing the solid silicon carbide particles to react and injecting the heated mixture into the reactor; co-depositing the silicon carbide material and the solid silicon carbide particles onto the heated carbon substrate in the reactor to produce a CVD matrix comprising the silicon carbide material and the solid silicon carbide particles by chemical vapor deposition on the heated carbon substrate; post-treating the carbon substrate having the CVD matrix coating in a furnace; and cooling and removing the carbon substrate from the CVD matrix to form the transparent composite article.

Abstract: A surface enhanced luminescence (SELS) sensor may include a substrate and nano fingers projecting from the substrate. Each of the nano fingers may include a polymer pillar having a sidewall and a top, a coating layer covering the sidewall and a metal cap supported by and in contact with the top of the pillar.

Abstract: A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.

Abstract: A design of an integrated computational element (ICE) includes specification of a substrate and a plurality of layers, their respective constitutive materials, target thicknesses and refractive indices, where refractive indices of respective materials of adjacent layers are different from each other, and a notional ICE fabricated in accordance with the ICE design is related to a characteristic of a sample. One or more layers of the plurality of layers of an ICE are formed based on the ICE design, such that the formed layer(s) includes(e) corresponding material(s) from among the specified constitutive materials of the ICE. Characteristics of probe-light interacted with the formed layer(s) are measured at two or more temperatures. Temperature dependence(ies) of one or more refractive indices of the corresponding material(s) of the formed layers is(are) determined using the measured characteristics.

Abstract: Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densities a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

Abstract: An apparatus for in situ steam generation oxidation are provided. The apparatus includes a reactor chamber. The apparatus also includes a radiant source over the chamber. The radiant source includes a plurality of lamps for heating the reactor chamber. The apparatus further includes a lamphead over the radiant source for adjusting the temperature of the radiant source. In addition, the apparatus includes a gas inlet system coupled to the lamphead. The gas inlet system includes a mass flow controller for adjusting the flow rate of cooling gas into the lamphead. The apparatus includes a gas outlet system, on the opposite side of the cooling gas inlet system, coupled to the lamphead. The gas outlet system includes a pressure controller for accelerating the exhaust rate of the cooling gas.

Abstract: The invention provides a system for coating an optical article with a coating composition (50), comprising a chamber configured to receive said article, a coating device configured to carry out a coating treatment of said composition for depositing it on said article in said chamber, by vaporizing said composition and by exposing at least a face of said article to the vaporized composition, and a control unit configured to control said coating device for coating said article by vaporizing said composition; said coating device being formed as a single cartridge unit comprising a casing (41) configured to contain said composition, a vaporizing conduit (49) opening both into said casing and outside of said coating device, and a propelling member (52) configured to pressurize said composition; said coating device being configured to put in fluidic communication said propelling member in an operative state with said casing in order to carry out said coating treatment for coating an article.

Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

Abstract: A production method of a semiconductor device includes introducing a reduction gas for reducing metal to a space containing a target to be used as the semiconductor device. The method also includes introducing a material gas and a first gas simultaneously to the space on a basis of a predetermined partial pressure ratio after introducing the reduction gas, to form a film that contains the metal, on the target. The material gas etches the metal when only the material gas is flowed. The first gas is different from the material gas. The predetermined partial pressure ratio is a ratio of the material gas and the first gas.

Abstract: A laminate includes a substrate made of an organic polymer having a functional group containing an oxygen atom or a nitrogen atom, a functional layer bonded to the functional group of the organic polymer contained in the substrate and formed by an atomic layer deposition process, and an overcoat layer provided to cover the functional layer and containing transition metal atoms. Because the adhesion between the substrate and the functional layer is improved and the functional layer is protected by the overcoat layer, it is possible to achieve both improved gas barrier properties and/or improved durability against an environmental stress such as heat, humidity and the like.

Abstract: Provided is a method of manufacturing a mask includes preparing a first conductive layer. The first conductive layer includes a third portion having a mesh shape in a plurality of cell regions on a substrate, a second portion disposed between the cell regions, and a first portion surrounding the third portion and the second portion. The method further includes preparing a second conductive layer including at least one opening on the first conductive layer. The method also includes oxidizing a part of the first conductive layer exposed through the at least one opening of the second conductive layer. The method further includes preparing a plating layer on the first conductive layer and the second conductive layer, and removing the first conductive layer and the second conductive layer from the plating layer.