Abstract: In one embodiment, a coating is provided that includes a deposition surface, and a coating on the deposition surface. The coating may include particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries. The metal chalcogenide composition has a molecular formula of MX2.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

Abstract: A method performed by a film deposition apparatus includes supplying a first reaction gas, which is adsorbable to hydroxyl groups, to a surface of a substrate and causing the first reaction gas to be adsorbed onto the surface of the substrate; supplying a second reaction gas to the substrate and causing the second reaction gas to react with the first reaction gas adsorbed onto the surface of the substrate to form a reaction product on the substrate; supplying an activated third reaction gas to the substrate to modify a surface of the reaction product; and supplying a fourth reaction gas including a hydrogen-containing gas to at least a partial area of the modified surface of the reaction product to form hydroxyl groups on at least the partial area.

Abstract: Systems and methods are disclosed for improving optical spectrum fidelity of an integrated computational element fabricated on a substrate. The integrated computational element is configured, upon completion, to process an optical spectrum representing a chemical constituent of a production fluid from a wellbore. The systems and methods measure in situ a thickness, a complex index of refraction, or both of a film formed during fabrication to generate a predicted optical spectrum. The predicted optical spectrum is compared to a target optical spectrum. Revisions to a design of the integrated computational element are conducted in situ to improve optical spectrum fidelity relative to the target optical spectrum. Other systems and methods are presented.

Abstract: A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.

Abstract: An apparatus for coating specimens includes a reaction chamber and a plurality of reaction modules in the reaction chamber for containing specimens to be coated, where each reaction module includes a module inlet and a module outlet. A plurality of conduits are configured to be in fluid communication with at least one gas source external to the reaction chamber, and each of the conduits terminates in one of the reaction modules for delivery of gaseous reagents to the specimens to be coated. The module outlets are in fluid communication with the reaction chamber for expulsion of gaseous reaction products from the reaction modules.

Abstract: A method for manufacturing a wavelength converting film is provided. A release film is provided. At a least one coating process is performed to form at least one wavelength converting layer on the release film, wherein a first contact surface of the at least one wavelength converting layer and the release film has a first roughness. An adhesive layer is formed on a surface of the wavelength converting layer farthest from the release film, wherein a second contact surface of the adhesive layer and the wavelength converting layer has a second roughness. The second roughness is greater than the first roughness.

Abstract: A method for processing a substrate in a substrate processing system includes selectively delivering at least one of a precursor, a deposition carrier gas, and a post deposition purge gas to a processing chamber. The method includes depositing film on the substrate by generating radio frequency (RF) plasma in the processing chamber between an upper electrode and a lower electrode while supplying an RF voltage to one of the upper electrode and the lower electrode and while the precursor and the deposition carrier gas is delivered. The method includes selectively supplying a direct current (DC) bias voltage to the upper electrode or the lower electrode; moving the substrate relative to a pedestal supporting the substrate while generating the DC bias voltage; and delivering the post deposition purge gas while supplying at least a portion of the DC bias voltage to the upper electrode or the lower electrode.

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Abstract: A method is provided for selective film deposition on a substrate. According to one embodiment, the method includes providing a substrate containing a first material having a first surface and second material having a second surface, where the first material includes a dielectric material and the second material contains a semiconductor material or a metal-containing material that excludes a metal oxide, reacting the first surface with a reactant gas containing a hydrophobic functional group to form a hydrophobic first surface, and depositing, by gas phase deposition, a metal oxide film on the second surface, where deposition of the metal oxide film is hindered on the hydrophobic first surface.

Abstract: Graphene can be produced from the byproducts formed during electrolysis of coal. These byproducts may be electrolyzed coal particles, gelatinous film formed on the electrolyzed coal particles, or the electrolyzed coal particles together with the gelatinous film. The electrolyzed coal byproduct is deposited as a thin layer onto a surface, or carrier substrate 50, which is heated to a temperature effective to form graphite while a reductant gas, such as hydrogen, flows over the heated coal product. The reductant gas flow carries the carbon particles and deposits them onto a surface 66, forming a layer of graphene thereon.

Abstract: Provided apparatus and methods for back side passivation of a substrate. The systems comprise an elongate support with an open top surface forming a support ring so that when a substrate is on the support ring, a cavity is formed within the elongate support. A plasma generator is coupled to the cavity to generate a plasma within the cavity to deposit a passivation film on the back side of the substrate.

Abstract: Methods for manufacturing cables and cables assemblies include providing powder particles within a tube extruded about optical fiber. The particles may be accelerated so that as they strike the tube and mechanically attach to the tube.

Abstract: A design of an integrated computational element (ICE) includes (1) specification of a substrate and multiple layers, their respective target thicknesses and refractive indices, refractive indices of adjacent layers being different from each other, and a notional ICE fabricated based on the ICE design being related to a characteristic of a sample, and (2) identification of one or more critical layers of the ICE layers, an ICE layer being identified as a critical layer if potential variations of its thickness or refractive index due to expected fabrication variations cause ICE performance degradation that exceeds a threshold degradation, otherwise the ICE layer being identified as a non-critical layer. At least one critical layer of the ICE is formed using two or more forming steps to form respective two or more sub-layers of the critical layer, and at least one non-critical layer of the ICE is formed using a single forming step.

Abstract: A process for activating a layer supported by a glass substrate includes carrying out a heat treatment in a chamber of a stack of several examples of the glass substrate, the glass substrates being separated by an interlayer powder. The layer to be activated may be an ITO layer, or a titanium oxide layer, or an SiO2 layer, or a silver layer.

Abstract: A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Abstract: The present invention relates to an element comprising a surface area with a specific, optically effective surface relief microstructure (12). The surface relief microstructure has a surface modulation of top regions (13) and bottom regions (14), wherein in a first lateral direction of the surface area there is in average at least one transition from a top to a bottom region or vice versa within every 20 micrometer, and in a second lateral direction of the mask, which is perpendicular to the first direction, there is in average at least one transition from a first to a second zone or vice versa within every 200 micrometer. In the microstructure, (i) in the first direction the lateral arrangement of the transitions is non-periodic, and (ii) the top regions substantially lie in the same top relief plateau (15) and the bottom regions substantially lie in the same bottom relief plateau (16).

Abstract: Described herein is a cost-effective and time-efficient method for making UV-absorbing contact lenses. In contrast to the conventional method for making UV-absorbing contact lenses which involves copolymerizing a lens forming composition including a UV-absorbing vinylic monomer, a method of the invention involves dipping a contact lens in a solution of UV-absorbing polymer comprising carboxyl-containing monomeric units, UV-absorbing monomeric units and covalently bound radical-initiating moieties to form a UV-absorbing coating on the contact lens.

Abstract: A first and second process gas is fed into a device during a first and second process step, respectively. The device has an exhaust gas line through which a first and second exhaust gas is conveyed out of the device in the first and second process step, respectively. A first and second exhaust gas device is connected by means of a valve arrangement optionally to the exhaust gas line in a fluidly communicable and separable manner, with a first and second treatment member for treating an exhaust gas produced in the first and second process step, respectively. A gas feed device is arranged between the valve arrangement and the respective treatment members. A control device is provided whose control variable is the pressure difference between the total pressure in the respective exhaust gas devices and is configured to minimize the pressure difference during switching of the valve arrangement.

Abstract: Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1?R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.