Abstract: A mid-infrared light emitting diode is provided, including a graphene lower electrode layer, a black phosphorous layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, in which the black phosphorous layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.

Abstract: The present disclosure relates to the field of display technology, and provides a display substrate and a method for manufacturing the same. The display substrate includes: a light-emitting substrate comprising a plurality of light-emitting regions which are arranged in parallel with a light propagation direction, and each light-emitting region is provided with a light-emitting layer; a defining layer provided on the light-emitting substrate and including a plurality of hollow-out portions, and the hollow-out portions correspond to the light-emitting regions one to one; and a plurality of micro-lenses provided in the hollow-out portions in a one-to-one correspondence manner. With the present disclosure, it is possible to prevent damage to an underlying light-emitting substrate when forming the micro-lenses and to enhance the stability of the micro-lenses.

Abstract: Provided is a memory device including a substrate, a plurality of stack structures, a protective layer, and a plurality of contact plugs. The stack structures are disposed over the substrate. The protective layer conformally covers top surfaces and sidewalls of the stack structures. The contact plugs are respectively disposed over the substrate between the stack structures. One of the contact plugs includes a narrower portion and a wider portion over the narrower portion. In a top view, the wider portion is separated from an adjacent protective layer by a distance.

Abstract: An organic electroluminescence element includes an anode, an organic light emitting layer disposed on an upper side of the anode, a first functional layer disposed over the organic light emitting layer and including NaF, a second functional layer disposed over the first functional layer and including an organic material containing Yb, and a cathode disposed on an upper side of the second functional layer. A method of manufacturing an organic electroluminescence element, includes forming an anode, forming an organic light emitting layer on an upper side of the anode, forming a first functional layer including NaF over the organic light emitting layer, forming a second functional layer including an organic material containing Yb over the first functional layer, and forming a cathode on an upper side of the second functional layer.

Abstract: The current disclosure describes techniques for forming gate-all-around (“GAA”) devices from stacks of separately formed nanowire semiconductor strips. The separately formed nanowire semiconductor strips are tailored for the respective GAA devices. A trench is formed in a first stack of epitaxy layers to define a space for forming a second stack of epitaxy layers. The trench bottom is modified to have determined or known parameters in the shapes or crystalline facet orientations. The known parameters of the trench bottom are used to select suitable processes to fill the trench bottom with a relatively flat base surface.

Abstract: A method of manufacturing a light emitting device includes: bonding a light emitting element and a light transmissive member by a surface activated bonding method, which includes: activating a first bonding surface of the light emitting element to which the light transmissive member is to be bonded, by irradiating at least the first bonding surface with an ion beam, activating a second bonding surface of the light transmissive member to which the light emitting element is to be bonded, by irradiating at least the second bonding surface with an ion beam, and joining the light emitting element and the light transmissive member by bringing the activated first bonding surface and the activated second bonding surface into contact.

Abstract: The present invention relates to an optical component and a transparent sealing member. An optical component has: at least one optical element; and a package that houses therein the optical element. The package has: a mounting board on which the optical element is mounted; a transparent sealing member bonded on the mounting board; a recessed section surrounding the optical element mounted on the mounting board; and a refractive index matching agent applied to the inside of the recessed section. The package has at least one groove in communication with the outside from the recessed section.

Abstract: A method of manufacturing a light emitting device includes: providing a first intermediate body including a substrate, first bonding members, a second bonding member, a light emitting element, a protecting element, a light transmissive member bonded to the light emitting element, and a light-shielding frame surrounding the light transmissive member in a top view, a portion of an outer periphery of the light-shielding frame being located above the protecting element such that at least a portion of the protecting element is exposed from the light-shielding frame in the top view; disposing a first resin between the light emitting element and the substrate by applying the first resin on the substrate in a region outside of the portion of the protecting element such that the first resin moves toward the light emitting element along the protecting element; and curing the first resin to obtain a first cover member.

Abstract: A display apparatus includes light-emitting elements configured to emit light in a screen, a louver fixed on the screen with a fastener, and a member disposed on a surface of the louver around the fastener and configured to reflect, in multiple directions, external light incident to a portion around the fastener or absorb the external light.

Abstract: A display substrate is provided, which includes a base substrate, a plurality of pixel units arranged on the base substrate, and a function layer arranged at a light-emitting side of at least one pixel unit of the plurality of pixel units, wherein the function layer is configured to shield a light beam toward a first direction among light beams emitted by the at least one pixel unit, the function layer includes an organic layer and a light-shielding layer, and the light-shielding layer is arranged on a part of the organic layer, and configured to shield the light beam toward the first direction among the light beams emitted by the at least one pixel unit. An on-board display device and a method for manufacturing the display substrate are further provided.

Abstract: A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a color filter layer. The light conversion layer is disposed on the light-emitting element. The color filter layer covers the sidewalls of the light conversion layer. In addition, the light-emitting unit further includes a protection layer located between the color filter layer and the light conversion layer.

Abstract: A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

Abstract: A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

Abstract: Embodiments described herein are directed towards enhanced systems and methods for applying underfill (UF) material to fill a gap between electrically coupled semiconductor devices in an integrated device. In some embodiments, uncured UF material may be applied to one edge of the gap, and capillary flow may be employed to distribute the uncured UF material into a first portion of the gap. To fill a second portion of the gap, accelerated motion may be employed. For example, the integrated device may be affixed to a centrifuge, and the centrifuge can be used to spin the integrated device to spread the uncured UF material further into the gap. In some embodiments, the accelerated motion may be employed to distribute the uncured UF material substantially uniformly within the gap. Once the uncured UF material has been spread out, one or more curing processes may be employed to cure the sandwiched UF material.

Abstract: A light-emitting device including a substrate, an insulating layer, an inner circuit structure, a plurality of light-emitting elements, an insulating encapsulation layer, and a transparent conductive layer is provided. The insulating layer is disposed on the substrate. The inner circuit structure is disposed on the insulating layer. The light-emitting elements are correspondingly disposed on the inner circuit structure. The insulating encapsulation layer is disposed on the inner circuit structure. The insulating encapsulating layer covers a portion of the inner circuit structure and encapsulates the light-emitting elements. The transparent conductive layer is disposed on the insulating encapsulating layer. The transparent conductive layer electrically connects the light-emitting elements, and serially connects the light-emitting elements.

Abstract: According to an aspect, a display device includes: a substrate; a plurality of pixels provided to the substrate; a plurality of light emitting elements provided to the pixels; and a first light diffusion layer including a plurality of light diffusion structures and having a first surface and a second surface opposite to the first surface, the second surface facing the substrate with the light emitting elements interposed between the second surface and the substrate. The light diffusion structures each include a plurality of high refractive index layers and a plurality of low refractive index layers. The high refractive index layers and the low refractive index layers are alternately layered in a thickness direction of the first light diffusion layer. The high refractive index layers and the low refractive index layers are each curved and recessed in a direction from the first surface toward the second surface.

Abstract: A quantum dot ink, a manufacturing method of a full-color film, and a display panel are provided. The quantum dot ink includes a plurality of quantum dots, a plurality of scattering particles, a polar solvent, and a transparent polymer material, wherein the transparent polymer material is used as a host material.

Abstract: A deep ultraviolet (DUV) light-emitting diode (LED) module structure contains: a holder configured to accommodate a substrate. The holder including a receiving cup mounted therein and a transparent layer mounted on a top of the receiving cup. The holder includes a DUV LED chip adhered on the substrate, and the holder, the substrate, and the DUV LED chip are connected and packaged. The substrate is electrically connected with a drive circuit, and the drive circuit is configured to turn on/off the DUV LED chip. Thereby, the DUV LED module structure enhances DUV radiation intensity, reduces a loss of optical path, and slows down deterioration because of DUV irradiation.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.