Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. In an embodiment a method includes arranging an optoelectronic semiconductor chip with its top side towards a surface of a carrier, forming a recess at the surface of the carrier such that the recess surrounds the optoelectronic semiconductor chip, arranging a mold compound in the recess and above the surface of the carrier such that the optoelectronic semiconductor chip is embedded into the mold compound, wherein a bottom side of the optoelectronic semiconductor chip remains at least partially not covered by the mold compound, removing the carrier and arranging a wavelength-converting material above the surface of the carrier before arranging the optoelectronic semiconductor chip, wherein the wavelength-converting material is perforated while forming the recess.

Abstract: The display device includes a first unit, and a plurality of second units. The first unit includes a first substrate, and a light blocking structure disposed on the first substrate. The light blocking structure has a plurality of first openings. Each one of the second units includes a second substrate, and a plurality of light emitting diodes disposed on the second substrate. The light emitting diodes correspond to a portion of the first openings. The second units are adhered to the first unit.

Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Abstract: A micro light-emitting diode (micro LED) display and a package method thereof are described. The micro LED display includes a substrate, various micro LED chips, and an encapsulation film. The substrate includes a wire. The micro LED chips are disposed on a surface of the substrate and are electrically connected to the wire. A light-emitting surface of each of the micro LED chips is set with at least one micro structure, and each micro structure has a top end. The encapsulation film encapsulates the micro LED chips, and covers the surface of the substrate. The top ends of the micro structures are located in a light-emitting surface of the encapsulation film.

Abstract: An electronic device includes a plurality of light emitting units mounted on a substrate, and an opening that is provided so as to correspond to each of the light emitting units and guides light emitted from the light emitting units to an outside.

Abstract: A display apparatus includes a blue light emitting element configured to emit blue light; a red light emitting element configured to emit red light; and a green light emitting element configured to emit green light. The blue light emitting element may include a first light emitting diode configured to emit light having a maximum intensity at a wavelength shorter than a blue wavelength; and a blue filter configured to transmit light having the blue wavelength.

Abstract: Disclosed is a display substrate, comprising a display area and a non-display area surrounding the display area. At least one limit mark group is disposed in the non-display area; the display area has a plurality of sides, and rounded chamfers are formed between adjacent two sides; the non-display area includes a frame part opposite to the sides of the display area and corner parts opposite to the rounded chamfers; and the limit mark group is located at the corner part. Accordingly, the disclosure also provides an organic light emitting device, a film vapor-deposition detecting method of an organic light emitting device, and a display device. According to the disclosure, it is possible to reduce the display defect and the accuracy of film vapor-deposition detection.

Abstract: Provided are a display panel and a display apparatus including the display panel. The display panel includes, sequentially along a light-exiting direction, a substrate, a plurality of light-emitting units located in a main display region and an optical component-arranging region, and a filter layer including a plurality of color resistors. A density of light-emitting units located in the optical component-arranging region is smaller than a density of light-emitting units located in the main display region. The optical component-arranging region includes a plurality of light-emitting regions and a plurality of light-transmitting regions. The plurality of light-emitting units located in the optical component-arranging region is arranged in the plurality of light-emitting regions. In a direction perpendicular to the substrate, some color resistors of the plurality of color resistors overlap the plurality of light-transmitting regions.

Abstract: A light source is specified which comprises a planar semiconductor light source comprising a plurality of independently operable single emitters, wherein, during operation, each of the single emitters emits light via respective single luminous surface. Furthermore, the light source has a common optical element which is arranged directly downstream of the single emitters and which is embodied and intended to direct light from different single emitters into different solid angle regions, wherein the single emitters are arranged defocused with respect to the optical element and the individual light surfaces are imaged in a blurred manner by the optical element.

Abstract: A micro light-emitting display is provided. The display includes a first transparent micro-cap disposed on a substrate. The first transparent micro-cap includes a first plate portion disposed opposite the substrate, and a first dam portion disposed between the substrate and the first plate portion. The substrate, the first plate portion, and the first dam portion form a first chamber. The display also includes a first micro light-emitting device disposed on the substrate and within the first chamber. The first chamber is in a vacuum or filled with air or an inert gas. In addition, the display includes a first color material layer disposed on the first plate portion and corresponding to the first micro light-emitting device. A method for forming the micro light-emitting display is also provided.

Abstract: Some embodiments include an integrated assembly having a ferroelectric transistor body region between a first comparative digit line and a second comparative digit line. A carrier-reservoir structure is coupled with the ferroelectric transistor body region through an extension that passes along a side of the first comparative digit line. Some embodiments include an integrated assembly having a conductive structure over a carrier-reservoir structure. A bottom of the conductive structure is spaced from the carrier-reservoir structure by an insulative region. A ferroelectric transistor is over the conductive structure. The ferroelectric transistor has a bottom source/drain region over the conductive structure, has a body region over the bottom source/drain region, and has a top source/drain region over the body region. An extension extends upwardly from the carrier-reservoir structure, along a side of the conductive structure, and to a bottom of the body region.

Abstract: A compression bonding apparatus is disclosed. The compression bonding apparatus comprises: a stage configured to support a substrate on which a plurality of light emitting elements are arranged on an adhesive layer having a predetermined viscosity; a support member disposed on the stage and surrounding at least a part of a side surface of the substrate; and a pressing member configured to press the plurality of light emitting elements, wherein the support member is configured to have a height equal to or greater than the height of the substrate.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor layer disposed on the substrate, a first insulating layer which covers the semiconductor layer, a first conductive layer disposed on the first insulating layer, a second insulating layer which covers the first conductive layer, a second conductive layer disposed on the second insulating layer, a third insulating layer which covers the second conductive layer, a third conductive layer disposed on the third insulating layer, a first organic layer which covers the third conductive layer, and a fourth conductive layer disposed on the first organic layer, where the fourth conductive layer includes a lower layer, a middle layer, and an upper layer, and the lower layer is disposed between the first organic layer and the middle layer, and includes a transparent conductive oxidization film.

Abstract: A light emitting structure includes a substrate, at least one light emitting chip disposed on the substrate and, a side wall disposed on the substrate and surrounding the at least one light emitting chip, a cover disposed on the side wall, an anti-reflective coating disposed on the cover, and a protective layer disposed on outside of the cover, wherein the cover, the side wall and the substrate define an enclosed space for accommodating the at least one light emitting chip.

Abstract: An LED chip package structure and a method of manufacturing the same are provided. The method of manufacturing the LED chip package structure includes providing a phosphor film including a phosphor layer and an outer enclosing layer for enclosing the phosphor layer that includes a plurality of phosphor particles; removing the outer enclosing layer from the phosphor layer for exposing the phosphor layer; and then covering an LED chip with the phosphor layer. The LED chip package structure includes an LED chip and a phosphor layer for covering the LED chip. The phosphor layer includes a plurality of phosphor particles tightly connected with each other, and the phosphor layer has no non-phosphor material. Therefore, the LED chip can be directly covered by the phosphor layer without the outer enclosing layer, and the phosphor particle without the non-phosphor material can directly contact the LED chip.

Abstract: A micro LED transferring method is provided. The transferring method includes selectively applying a color conversion material to a mono-color substrate, the mono-color substrate including first micro LEDs in a first color; obtaining a multi-color substrate based on a result of the applying, the multi-color substrate including the first micro LEDs in the first color and second micro LEDs in a second color different from the first color; and irradiating a laser beam toward the multi-color substrate to transfer the first micro LEDs and the second micro LEDs to a target substrate.

Abstract: A light emitting diode package, including: a housing, wherein the housing includes a top section having an aperture; a lead frame associated with the housing, wherein the lead frame includes a first electrode and a second electrode; a light emitting diode light source, wherein the light emitting diode light source is associated with the aperture of the housing; an encapsulant, wherein the encapsulant is associated with at least a portion of the light emitting diode light source and the housing; and a protective coating associated with at least a portion of the encapsulant and the housing, wherein the protective coating reduces and/or eliminates oxidative degradation, thermal degradation, and/or photodegradation.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

Abstract: An image display device includes: a plurality of micro light emitting elements arranged in an array shape; a driving circuit substrate including a driving circuit that supplies electric current to the plurality of micro light emitting elements and that causes the plurality of micro light emitting elements to emit light; a plurality of micro lenses in contact with light emitting surfaces of the plurality of micro light emitting elements; and a plurality of partition walls disposed around the plurality of micro lenses in a direction parallel to the light emitting surfaces.

Abstract: A light emitting display apparatus can include an insulating layer on a substrate and the insulating layer includes a base portion and a protrusion portion. The light emitting display apparatus further includes a first electrode covering an upper portion of the base portion and a side portion and an upper portion of the protrusion portion. The light emitting display apparatus further includes a bank layer covering a portion of the insulating layer and a portion of the first electrode and having a concave portion. The light emitting display apparatus further includes a light emitting layer on the first electrode and the bank layer, and a second electrode on the light emitting layer.