Abstract: Heat resistant spheroidal graphite cast iron having an improved high temperature tensile strength includes carbon (C) in a range of 3.2-3.4 wt %, silicon (Si) in a range of 4.3-4.8 wt %, manganese (Mn) in a range of 0.2-0.3 wt %, molybdenum (Mo) in a range of 0.8-1.0 wt %, vanadium (V) in a range of 0.4-0.6 wt %, chrome (Cr) in a range of 0.2-0.4 wt %, niobium (Nb) in a range of 0.2-0.4 wt %, inevitable impurities, and a remainder of iron (Fe) based on a total weight of the heat resistant spheroidal graphite cast iron. The heat resistant spheroidal graphite cast iron further includes barium (Ba) in a range of 0.0045-0.0075 wt %. A content ratio of chrome (Cr) and barium (Ba) (Cr/Ba) is in a range from about 26 to about 89.

Abstract: Disclosed are methods for purification of a crude TiI4 for deposition of Ti-containing films including evaporating volatile impurities in the crude TiI4 under vacuum at room temperature in a sublimator and removing the volatile impurities, placing the sublimator in a hot oil bath under vacuum at a temperature to evaporate TiI4 and form powders or a solid, and sublimating the powers or the solid under vacuum at the temperature to obtain the purified TiI4. Disclosed are methods for storage of a pure TiI4 including drying a stainless-steel canister, instantaneously moving the dried stainless steel canister into a glove box under inert atmosphere at room temperature, moving the pure TiI4 into the glove box, filling the pure TiI4 into the dried stainless-steel canister, and sealing the dried stainless steel canister containing the pure TiI4 with metallic sealing.

Abstract: A method for producing metal chloride Mx+Clx? includes reacting metal carbonate in solid form using phosgene, diphosgene and/or triphosgene to form metal chloride Mx+Clx?, wherein the metal M is selected from the group containing alkali metals, alkaline earth metals, Al and Zn, Li and Mg, or Li, for example, and x corresponds to the valency of the metal cations. An apparatus for performing such method is also disclosed.

Abstract: A sorbent in the form of a layered, non-porous perovskite is provided, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. Furthermore, each organic layer can be sandwiched between inorganic layers. Methods for capturing one or more halogens from a gas stream are also provided, wherein the methods can include contacting a gas stream with a sorbent in the form of a layered, non-porous perovskite, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. One or more halogens in the gas stream can react with either alkyne groups or alkene groups found in the organic layer of the sorbent.

Abstract: A grain refiner for a magnesium alloy according to the present invention contains aluminum (Al) and manganese (Mn), and contains a compound of aluminum (Al) and manganese (Mn) in the microstructure thereof, wherein the grain refiner is composed of a structure in which, in the compound of aluminum (Al) and manganese (Mn), the area of the compound having an Al/Mn compositional (atomic) ratio of 4-4.5 is larger than the area of the compound having an Al/Mn compositional (atomic) ratio of 5.5-6.5. When the grain refiner is added to molten magnesium, crystal grains can be refined to 50-100 ?m.

Abstract: A method for preparing chlorine gas through catalytic oxidation of hydrogen chloride is carried out by one-time hydrogen chloride feeding and multi-stage oxygen feeding, one-time oxygen feeding and multi-stage hydrogen chloride feeding, or both, returning a product gas stream without separation thereof, and optionally carrying out heat insulation means. In the present invention, excessive reaction heat concentration is prevented, therefore, the method of the present invention is a chlorine gas recovery method implemented through the Deacon catalytic oxidation of hydrogen chloride that may be industrialized.

Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

Abstract: The present invention relates to a method for preparing catalyst used for preparing chlorine by oxidizing hydrogen chloride. The method is mixing a slurry mainly containing boron and chromium with a slurry mainly containing copper, boron, alkali-metal elements, rare-earth elements, aluminum sol, silica sol, carrier and optionally other metal elements, the mixing temperature being not more than 100° C., and the residence time being not more than 120 minutes, the mixed slurry is successively treated with spray drying, high temperature calcination, so that the catalyst is obtained. The present invention also relates to the catalyst prepared through the method, use of the catalyst used in the process of preparing chlorine by oxidizing hydrogen chloride and a method for preparing chlorine by using the catalyst. The catalyst is used for preparing chlorine by oxidizing hydrogen chloride with oxygen or air in fluidized bed reactor.

Abstract: A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.

Abstract: Described herein are methods for the bromine-facilitated synthesis of fluoro-sulfur compounds, that include SF4, SF5Cl, SF5Br and SF6. The methods described herein generally require lower temperature and pressure, produce higher yields, require less time, do not use corrosive or costly reactants and solvents that are commonly used in the synthesis of the fluoro-sulfur compounds, and do not produce deleterious waste products when compared to previously-used methods.

Abstract: The present invention provides a metal wire rod composed of iridium or an iridium alloy, wherein the number of crystal grains on any cross-section in a longitudinal direction is 2 to 20 per 0.25 mm2, and the Vickers hardness at any part is 200 Hv or more and less than 400 Hv. The iridium wire rod is a material which is produced by a ?-PD method, and has low residual stress and which has a small change in the number of crystal grains and hardness even when heated to a temperature equal to or higher than a recrystallization temperature (1200° C. to 1500° C.). The metal wire rod of the present invention is excellent in oxidative consumption resistance under a high-temperature atmosphere, and mechanical properties.

Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

Abstract: A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

Abstract: Provided is a method for purifying a difluorophosphate, in which a difluorophosphate is purified to a high purity. The method includes a method for purifying a difluorophosphate, comprising bringing hydrogen fluoride into contact with a difluorophosphate containing an impurity and subsequently heating and drying the difluorophosphate, or bringing the hydrogen fluoride into contact with the difluorophosphate containing the impurity while heating and drying the difluorophosphate containing the impurity, thereby removing the impurity.

Abstract: Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or X2 wherein X is Cl, Br, or I) with RSiH3, wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula SixHaXb, wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.

Abstract: A method of making the inorganic gold compound, such as tetrachloroauric acid, sodium tetrachloroaurate, potassium tetrachloroaurate, sodium tetracyanoaurate, and potassium tetracyanoaurate, includes the step of: treating gold with a halogen-containing oxidizing agent in a hydrochloric acid to obtain the inorganic gold compound, wherein the halogen-containing oxidizing agent excludes chlorine gas. The method of making the inorganic gold compound is simple, safe, time-effective, cost-effective, and environment-friendly, and has the advantage of high yield.

Abstract: A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.

Abstract: A method includes injecting a feed stream including a hydrogen halide and water into a vapor liquid separator. The feed stream has a liquid phase and a vapor phase. The method further includes separating the liquid phase and the vapor phase in the vapor liquid separator to form condensate and vapor, and discharging the condensate from the vapor liquid separator in a liquid stream. The method also includes discharging the vapor from the vapor liquid separator in a vapor stream.

Abstract: Methods and systems for producing high purity gaseous chlorine dioxide are provided. A solid chlorite reactant is contacted with an ozone-containing reactant gas, or a gas containing both ozone and a component that reacts with any hydroxide byproduct (such as carbon dioxide), to produce chlorine dioxide. The reaction can be monitored and controlled to ensure that excess chlorite reactant is provided and to prevent ozone from passing into the product gas.

Abstract: The invention relates to a process for the production of chlorine dioxide comprising forming chlorine dioxide in a reaction medium in a reaction vessel and withdrawing chlorine dioxide as a gas from the reaction medium in the reaction vessel, the process further comprising adding chlorine dioxide to at least one raw material used in the process. The invention further relates to the use of chlorine dioxide for the reduction of the amount of chlorinated aromatic compounds occurring in a process for the production of chlorine dioxide.