Patents Examined by Norman Morgenstern
  • Patent number: 5032461
    Abstract: A high speed process for forming a multi layered thin film structure in a vacuum wherein each film is less than about four microns thick and the total layers can reach upwards to 4,000 or more. The polymeric layers are formed of a cross linked component selected from the group consisting of polyfunctional acrylates and mixtures of polyfunctional acrylates and monocrylates with the component having a preferable molecular weight of between 200 and 300 and a vapor pressure preferably in excess of 1.times.10.sup.-2 Torr. The polymeric layers may be interleaved with metal layers.
    Type: Grant
    Filed: October 12, 1990
    Date of Patent: July 16, 1991
    Assignee: Spectrum Control, Inc.
    Inventors: David G. Shaw, Angelo Yializis, Donald S. Strycker, Mooyoung Ham
  • Patent number: 5031571
    Abstract: A film-forming apparatus comprising a high-frequency application electrode and an earth electrode. The high-frequency applying electrode has an uneven surface with projections and recesses. An amorphous silicon film is formed uniformly on a substrate at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode and the earth electrode, and positioning the substrate in an atmosphere of the generated glow discharge.
    Type: Grant
    Filed: January 25, 1989
    Date of Patent: July 16, 1991
    Assignee: Mitsui Toatsu Chemicals, Inc.
    Inventors: Takashi Igarashi, Nobuhiro Fukuda
  • Patent number: 5030476
    Abstract: A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means.
    Type: Grant
    Filed: May 21, 1990
    Date of Patent: July 9, 1991
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryuji Okamura, Hirokazu Otoshi, Tetsuya Takei
  • Patent number: 5026574
    Abstract: A deposition process includes the steps of heating a substrate, and passing silane gas over the substrate such that the heated substrate causes decomposition of the silane gas thereby to cause deposition of polysilicon film on the substrate. The temperature of the substrate and the pressure of the silane gas are controlled so as to increase the grain size of the deposited films.
    Type: Grant
    Filed: January 25, 1989
    Date of Patent: June 25, 1991
    Assignee: The General Electric Company, p.l.c.
    Inventors: Nikolaos A. Economu, Douglas B. Meakin
  • Patent number: 5026682
    Abstract: A superconducting device operable at temperatures in excess of 30.degree. K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high T.sub.c superconducting material, the SQUID device being operable at temperatures in excess of 60.degree. K. High energy beams, for example ion beams, are used to convert selected portions of the high T.sub.c superconductor to nonsuperconductor properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.
    Type: Grant
    Filed: April 13, 1987
    Date of Patent: June 25, 1991
    Assignee: International Business Machines Corporation
    Inventors: Gregory J. Clark, Richard J. Gambino, Roger H. Koch, Robert B. Laibowitz, Allan D. Marwick, Corwin P. Umbach
  • Patent number: 5025751
    Abstract: A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
    Type: Grant
    Filed: June 14, 1989
    Date of Patent: June 25, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Shinichiro Takatani, Shigeo Goto, Masahiko Kawata, Kenji Hiruma
  • Patent number: 5026575
    Abstract: The present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.
    Type: Grant
    Filed: July 11, 1989
    Date of Patent: June 25, 1991
    Assignee: Board of Regents, The University of Texas System
    Inventors: Richard A. Jones, Alan H. Cowley, Al F. Tasch, Jr.
  • Patent number: 5024182
    Abstract: An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction.
    Type: Grant
    Filed: July 6, 1989
    Date of Patent: June 18, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshiyuki Kobayashi, Masao Koshinaka, Yoshimi Kinoshita, Masao Oda, Kenji Yoshizawa
  • Patent number: 5024879
    Abstract: Process for consolidating solid materials and/or articles, which exhibit at least a low cohesion degree area associated with at least one structural discontinuity, debouching or opening into the surface and/or pervious from the surface of said material and/or article, with ports or openings having sizes equal to at least 0.01 micron, which process comprises:(a) introducing into said low-cohesion area associated with a structural discontinuity vapors of at least one p-xylylene monomer and/or a monomer derivative thereof, operating under vacuum, and(b) polymerizing said monomer vapors in situ inside said low-cohesion area associated with said structural discontinuity.
    Type: Grant
    Filed: December 26, 1989
    Date of Patent: June 18, 1991
    Assignee: Ausimont S.p.A.
    Inventors: Vincenzo Massa, Aldo Cicuta, Walter Cavigiolo
  • Patent number: 5024852
    Abstract: A process for the manufacture of a prophylactic device having contained therein at least one pharmaceutically active substance, comprising:forming a first layer of elastomeric material into the desired shape of the prophylactic device;prevulcanizing the first layer;applying to one side of the first layer a layer of microcapsules having at least one pharmaceutically active substance encapsulated therein;depositing on the coating of microcapsules a second layer of elastomeric material; andvulcanizing the first and second layers of elastomeric material. The device may be in the form of a contraceptive sheath, finger stall or glove, and protects the user from contamination by various germs, viruses, fungi and other pathogens in the whole area of the body covered by the device.
    Type: Grant
    Filed: March 28, 1990
    Date of Patent: June 18, 1991
    Assignee: Hutchinson
    Inventors: Rene-Guy Busnel, Gilles Argy
  • Patent number: 5024861
    Abstract: The invention comprises a process for the preservation of timber with a boron based compound, such as trimethyl borate. The timer is dried to a low moisture content, is then subjected to a vapor of the boron compound in a suitable treatment vessel, and after vapor treatment is steam conditioned to return the moisture content of the timber to a normal working level. The vapor treatment is preferably carried out under heat and reduced pressure. Timber preserved by the process is also claimed.
    Type: Grant
    Filed: June 23, 1988
    Date of Patent: June 18, 1991
    Assignee: Her Majesty the Queen In Right of New Zealand Acting by and Through the Minister of Forestry for New Zealand
    Inventors: Peter Vinden, Russell J. Burton, Timote M. Vaioleti
  • Patent number: 5024901
    Abstract: The method for producing the disclosed material comprises chemical vapor depositing on the substrate a substantially columnar, intermediate layer of tungsten and chemical vapor depositing on the intermediate layer a non-columnar, substantially lamellar outer layer of a mixture of tungsten and tungsten carbide. The tungsten carbide comprises W.sub.2 C, W.sub.3 C, or a mixture of both wherein the ratio of the thickness of the tungsten intermediate layer to the thickness of the outer layer is at least: (a) 0.35 in the case of tungsten plus W.sub.2 C in the outer layer, (b) 0.6 in the case of a mixture of tungsten and W.sub.3 C in the outer layer and (c) 0.35 in the case of mixtures of tungsten and W.sub.2 C and W.sub.3 C in the outer layer. The chemical vapor deposition steps are carried out at pressures within the range of 1 Torr to 1,000 Torr and temperatures within the range of about 300.degree. to about 650.degree. C.
    Type: Grant
    Filed: May 3, 1989
    Date of Patent: June 18, 1991
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Diwakar Garg, Paul N. Dyer, Leslie E. Schaffer, Ernest L. Wrecsics, Duane Dimos, Carl F. Mueller
  • Patent number: 5024859
    Abstract: An oxide barrier coating for reinforcing fiber is provided with a preselected microstructure and thickness through control of the concentration of metal salt in heat decomposable form as a precursor of metal oxide. In one form, the salt is a metal oxyhalide salt such as zirconium oxyhalide or halfnium oxyhalide. Fibers, such as ones of alumina, aluminasilicate or silicon carbide, having the coating of the invention are especially useful as reinforcing fibers for reinforced ceramic matrix composites.
    Type: Grant
    Filed: November 20, 1989
    Date of Patent: June 18, 1991
    Assignee: General Electric Company
    Inventors: Michael L. Millard, Michael G. Harrison, Andrew Szweda
  • Patent number: 5023107
    Abstract: A method of improving the adhesion of an adhesive to the surface of hard tissue. Before the adhesive is applied, the hard tissue surface is primed with a polybiguanide or an addition salt thereof, or is pretreated with an aqueous solution of a magnesium salt and then primed with a primer selected from a long chain alkyl quaternary ammonium salt, a bisbiguanide, an acid addition salt of a bisbiguanide, a polybiguanide, and an acid addition salt of polybiguanide.
    Type: Grant
    Filed: May 3, 1989
    Date of Patent: June 11, 1991
    Assignee: Imperial Chemical Industries PLC
    Inventor: Thomas A. Roberts
  • Patent number: 5020474
    Abstract: An apparatus for vapor phase epitaxial growth comprises a reactor tube, a raw material gas supplying device for supplying a raw material gas or gas mixture for thin film formation into the reactor tube, a liquid tank disposed within the reactor tube, a melt stored in the liquid tank, and a heater for heating the melt. The reverse side of a substrate is kept in contact with the melt. The substrate is heated to a desired temperature by heat conduction from the melt.
    Type: Grant
    Filed: July 13, 1989
    Date of Patent: June 4, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Toshio Tanaka
  • Patent number: 5021396
    Abstract: The invention is an aftertreatment of a high Tc compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment oxygen plasma is preferably performed while the material is heated at 400.degree. to 1,050.degree. C.The material may have a form of bulky mass or a thin film deposited on a substrate by physical vapour deposition technique.
    Type: Grant
    Filed: November 16, 1989
    Date of Patent: June 4, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuhiko Fujita, Hideo Itozaki, Saburo Tanaka, Shuji Yazu, Tetsuji Jodai
  • Patent number: 5021398
    Abstract: The present invention describes a method to produce a patterned superconducting solid preferably as a thin film. Unsaturated organic acid metal salts of suitable metals are dissolved in an organic solvent, mixed thoroughly and cast as a film on a substrate. The concentration of these organic carboxylate metal salts is adjusted such that a superconducting metal oxide ratio is obtained upon pyrolysis at temperatures up to 1000.degree. C. with subsequent slow cooling. A pattern (mask) is placed over the film and the film is irradiated to polymerize and crosslink the exposed portions. The unpolymerized and uncrosslinked portions are removed usually by using selective solvents or solvent mixtures. The solid remaining is heated in oxygen or air to about 1000.degree. C., which removes the organic portions and leaves metal oxide residue. The metal oxides are then cooled slowly and annealed to produce the patterned metal oxide superconducting materials.
    Type: Grant
    Filed: October 26, 1989
    Date of Patent: June 4, 1991
    Assignee: AMP Incorporated
    Inventors: Suniti K. Sharma, Susanna C. Ventura, Subhash C. Narang
  • Patent number: 5021270
    Abstract: The moisture or water vapor barrier protection of a composite pressure vessel suitable for use as a composite cased solid propellant rocket motor is improved by immersing the pressure vessel, during pressure testing thereof, in a curable liquid polymer solution, optionally containing electrically conductive material such as metallic flakes or powder, so that the solution may flow into open voids, cracks or fractures in the pressure vessel and subsequently curing the curable liquid polymer in said voids, cracks or fractures.
    Type: Grant
    Filed: December 11, 1989
    Date of Patent: June 4, 1991
    Assignee: Thiokol Corporation
    Inventors: Robert E. Black, Jr., Don C. Carson, Frederick W. Van Name
  • Patent number: 5019417
    Abstract: A system for pipe lining including a forward seal and a following spreader defining a chamber therebetween for receiving flowable lining material. The spreader is immediately followed by a cylindrical elongate platen formed of radiant-energy transparent material. A radiant energy source is mounted in the platen for transmission of radiant energy through the platen and into the lining material simultaneously with the forming of the lining material into position by the platen as the apparatus moves along the interior of the pipe.
    Type: Grant
    Filed: August 15, 1989
    Date of Patent: May 28, 1991
    Inventor: Gerald G. Northcutt
  • Patent number: 5019420
    Abstract: A process, based on sputtering from metal sources, is disclosed for forming a stable, reduced electrochromic layer in contact with an ionically conducting oxide. A deposited electrochromic layer is reduced by sputtering onto it an alloy or composite metallic thin film capable of injecting insertion atoms into the electrochromic layer. The metallic thin film, now partially depleted in insertion atoms, is converted into an electronically insulating but ionically conducting oxide layer in an oxidizing atmosphere. The resultant two-layer structure, consisting of the reduced electrochromic layer capped by the insulating oxide, may be used as on component in an all solid-state electrochromic device.
    Type: Grant
    Filed: January 17, 1989
    Date of Patent: May 28, 1991
    Assignee: EIC Laboratories, Inc.
    Inventor: R. David Rauh