Abstract: A method of manufacturing a polyimide thin film is disclosed which comprises supplying vapors of a polyimide starting material comprising a plurality of polyimide forming monomers into a plasma atmosphere, transferring the ionized polyimide starting material, under an electric field, to the surface of a glass or metallic substrate and depositing the material thereon, and heating the same during or after deposition, thereby forming a polyimide thin film as an orientation film on the substrate.

Abstract: A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

Abstract: A method for producing a patterned layer of high T.sub.c oxide superconductor is provided in which patterning is accomplished prior to the attainment of a superconducting state in the layer. A solution containing precursor components of the desired oxide superconductor is sprayed onto a substrate and dried to provide a layer thereon. This layer is then irradiated in selected areas to convert the irradiated layers to an intermediate oxide state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of oxide material. This oxide material is then converted to a high T.sub.c superconducting state, as by annealing in an oxygen atmosphere. This provides the patterned layer of high T.sub.c oxide superconductor. An example of a such a superconductor is a mixed copper oxide, such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x.

Abstract: A process is disclosed by which the finish and figure of polished preshaped structures (such as mirrors) can be replicated directly by chemical vapor deposition, with only minor polishing of the replica being required to obtain a final product, and with the original substrate being reusable for further replication. Relevant conditions under which the process can be carried out are given. Featured in the process is a pretreatment step prior to the deposition of a layer of silicon carbide to form the replica, which pretreatment step involves the formation on the polished substrate of an oxide layer and a carbon layer of high finish and uniform thickness. The carbon layer allows easy separation of the substrate and replica which otherwise would be bound together.

Abstract: A nodulizing machine for use in an apparatus for making loose fill insulation from mineral fibers comprises an input portal, a conduit containing a plurality of blades and an output portal. Apparatus for making loose fill insulation from mineral fibers comprises a duct extending from a source of the mineral fibers to the nodulizing machine of the present invention. The apparatus includes flow rate control means to control the flow rate of air and mineral fibers in the apparatus. A process for making loose fill insulation from mineral fibers in association with the apparatus of the invention is also disclosed.

Abstract: While CVD (chemical vopour reaction) methods and enhanced CVD methods for coating a substrate with a carbon coating have recently been attracting considerable interest, there have occurred hitherto rubbing-off of the carbon coating from the underlying substrate due to differential thermal expansion or contraction. The present invention discloses a modification of the conventional CVD process for carbon deposition in accordance with which the deposition condition is changed in order that the hardness of the carbon coating at the interface between the coating and the underlying substrate is lower than that at the external surface of the coating.

Abstract: To produce a layer in a multi-layer circuit structure, a "green ceramic tape" (16) comprising a sheet of particles of ceramic, glass ceramic, or a glass/ceramic composite in an organic binder is applied to a ceramic substrate (12) on which conductive paths (14) have been deposited. A slurry of hollow microspheres (20) is then deposited onto the green ceramic tape (16), and pressure is applied to drive the spheres into the tape. A further tape layer (22) is then applied, and the resultant structure is fired.

Abstract: A vapor growth apparatus comprising a reaction chamber including a gas inlet, a diffuser section, the cross section of which gradually increases in a direction of the flow of gas supplied from the gas inlet, and a reaction chamber, which is coupled to the diffuser section and in which a substrate on which a thin film is to be formed is arranged, and a flow regulating member arranged, within the diffuser section, to make the flow speed of gas passing over the substrate uniform in a direction perpendicular to the direction of the flow of the gas. The flow speed of gas flowing over the substrate is made uniform in a direction perpendicualr to the direction of the flow of the gas, so that a thin film can be uniformly formed on the substrate in a direction perpendicular to the direction of the flow of the gas.

Abstract: Cations such as La, Sr, Cu, or Y, Ba, Cu are dissolved in an organic solvent such as ethylene glycol and citric acid. The solution is formed into either a free-standing or supported film which is dried to produce a solid organic polymer. The polymer is then fired in an oxidizing atmosphere (pyrolysis) to obtain the superconducting oxide. It is preferred that the film be spin coated on a substrate to produce uniform coatings of thicknesses less than one micrometer. The resulting superconducting oxide film is fully dense, of controlled microstructure, very monogeneous in composition and suitable for demanding electronic device purposes or as coatings to form superconducting wires or other current carrying components.

Abstract: A chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer, such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film in the chemical vapor deposition process. The temperature difference is due to the differences of the adsorption ratios of infrared light of the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat or sheet form substantially parallel to the surface of the wafer, and in inernt gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2 gas.

Abstract: A method of manufacturing an oxide superconductor by heating a raw material for an oxide superconductor composed of MBa.sub.2 Cu.sub.3 O.sub.7-.delta., where M represents at least a single element selected from a group of Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, to a temperature higher than a peritectic reaction temperature for melting the same and thereafter reducing the temperature to the peritectic reaction temperature to crystallize the oxide superconductor by peritectic reaction. A method of forming a dispersion solution of powder of a raw material for an oxide superconductor and applying the same on a substrate to prepare a thick film. A method of dipping a single crystal of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO to form a thin film of an oxide superconductor on the single crystal. A method of manufacturing a bulky oxide superconductor by dipping a porous sintered material of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO.

Abstract: An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap therebetween. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.

Abstract: Photoluminescent materials useful for detection of infrared light are prepared using a base material, first and second dopants, barium sulfate and a fusible salt. The base material is an alkaline earth metal sulfide such as strontium sulfide, calcium sulfide, or a mixture of strontium sulfide and calcium sulfide. Barium sulfate is used to increase the brightness of output light, whereas lithium fluoride is used to allow the material to be fused together. Samarium, cerium and europium compounds are used in specific examples as dopants for providing electron traps. The photoluminescent material is made according to a process involving drying the mixture in a dry inert atmosphere, and heating the mixture in the inert atmosphere in a graphite crucible to a fusing temperature. The resultant material can then be applied to a substrate using thin film physical vapor deposition techniques.

Abstract: In the manufacture of an electronic device, e.g. an infrared detector of cadmium mercury telluride, a gas stream (36) comprising two or more reactants is passed over a heated substrate (29) in a reaction zone (C) of a reactor vessel (1) so as to deposit material in a layer (30) on the substrate (29). One reactant, e.g. a readily decomposible cadmium alkyl (Me.sub.2 Cd), is supplied to the reaction zone (C) by means of an injection tube (b 12) which passes through a heated first zone (A) of the vessel (1). The tube (12) has a narrow bore (y) to provide a high flow velocity for this reactant (Me.sub.2 Cd) through the first zone (A). In accordance with the invention, the tube (12) widens in at least one dimension (x), towards its outlet end, so as to provide a wider outlet for injecting the reactant (Me.sub.2 Cd) into the gas stream (38,36) with a lower flow velocity which matches more closely the flow velocity of the gas stream (38,36).

Abstract: The invention discloses a dual ion beam ballistic alloying process for forming a film such as diamond onto a substrate, which comprises the steps of: (a) cleaning the surface of the substrate with a first energy beam of inert atoms; (b) depositing a layer of a desired non-hydrocarbon substance on the substrate with a low energy, sputtered atomic beam; (c) simultaneously exposing the substrate to said first energy beam of inert atoms with a high energy to grow a ballistically alloyed layer having a thickness of about 10-2000 .ANG.; and (d) reducing the energy level of the first, high energy beam to cause the growth of the layer of said substance on said substrate to a final desired thickness.

Abstract: This invention relates to a manufacturing method for a recording medium or a recording head characterized in improving the slide ability of a surface of a recording medium or a recording head, and improvement or their durability by forming a monomolecular film made from silane surfactants on the surface of a recording medium or a head by direct or indirect chemisorption.

Abstract: A reactor for MOCVD systems, having a reaction vessel through which the reacting gas or gases flow and in which the substrates are arranged in such a manner that a main surface is approximately parallel to the flow direction. The reaction vessel is made of quartz-glass and has, at least in the region in which the reacting gas flows, a rectangular cross-section. A flange element is provided at the gas-entrance-side end of the reaction vessel, while a protective tube surrounds the reaction vessel. The protective tube is provided with a face-end reactant gas inlet connected with a flange element to which the flange element of the reaction vessel can be flanged. The protective tube has a protective gas inlet in its superficies, which permits purging the space between the reaction vessel and the protective tube, and a reactant gas outlet. The reactant gases are deflected in the reaction vessel and exit through the superficies of the reaction vessel.

Abstract: A treatment apparatus used in manufacturing processes for semiconductor devices and the like, in which substrates are treated by means of a reaction gas. An inner tube, which is coaxially disposed in a reaction tube, defines a reaction region surrounding the substrates to be treated. The inner tube has a number of perforations in its wall, by means of which the inside and outside of the reaction region communicate with each other. During reaction treatment, the reaction gas is supplied to the reaction region, while a cleaning gas is supplied to the region outside the reaction region. Both these gases are discharged through a common exhaust pipe. The flows of the reaction gas and the cleaning gas are controlled so that the pressure inside the reaction region is higher than the pressure outside the region. As the cleaning gas is supplied, production and adhesion of reaction compound particles on the inner surface of the reaction tube is prevented.

Abstract: A method is described for improving the erosion and abrasion wear resistance and hardness of the internal wear surfaces of structures such as nozzles, jets, ducts, chutes, powder handling tubes, valve housings, conveyors, drill bushings and the like. A substantially pure tungsten layer is chemical vapor deposited on the internal wear surface of the body of the structure followed by a chemical vapor deposited top coating comprising a mixture of tungsten and tungsten carbide. The tungsten carbide is selected from the group consisting of W.sub.2 C, W.sub.3 C, and mixtures thereof and is fine grained, non-columnar and has a substantially layered microstructure. Also described are structures formed by the method.