Patents Examined by Norman Morgenstern
  • Patent number: 5010009
    Abstract: A surface for the attachment and growth of cells is prepared by first grafting polyacrylic acid chains to a fluorocarbon polymer substrate so that its weight increases by between 0.1 % and 20%. The surface is then treated with concentrated sulphuric acid under such conditions that will separately decarboxylate, aromatize and sulphonate an effective proportion of the grafted polyacrylic acid chains before being dried, soaked in a concentrated acid and brought to a substantially neutral pH for cell attachment and growth thereupon. The surface may also be used as a human tissue implant.
    Type: Grant
    Filed: May 9, 1990
    Date of Patent: April 23, 1991
    Assignee: Commonwealth Scientific & Industrial Research Organisation & Telectronics Pty. Limited
    Inventors: John Steele, Oddvar Johansen, Graham Johnson, Johnathon Hodgkin
  • Patent number: 5009600
    Abstract: A method of painting a clay body and maintaining a durable, decorative surface finish by providing a barrier film layer between the paint coat layer and the clay body such that the oily substance contained in the clay body is blocked from permeating through the barrier film to adversely affect the paint coat layer.
    Type: Grant
    Filed: February 28, 1990
    Date of Patent: April 23, 1991
    Assignee: General Motors Corporation
    Inventor: Robert L. DeLaRosa
  • Patent number: 5009924
    Abstract: A process is described for modifying the surface of polymers such as polyolefins and the like to improve the wetability by barrier and other coatings and to enhance interlayer adhesion by graft polymerization through initiation by electron-beam radiation, optionally with an added electron energy acceptor.
    Type: Grant
    Filed: October 27, 1989
    Date of Patent: April 23, 1991
    Assignees: Energy Sciences Inc., Marjorie T. Wyman
    Inventor: John E. Wyman
  • Patent number: 5007372
    Abstract: A vacuum depositing apparatus for forming a vapor-deposited film by evaporation of a material to be vapor deposited onto the surface of a substrate under vacuum, whereby mechanisms are provided to prevent impurities, due to contamination in the vacuum vessel or impurities caused by thermal deterioration of the material, from mixing with and contaminating the vapor-deposited film.
    Type: Grant
    Filed: December 5, 1988
    Date of Patent: April 16, 1991
    Assignee: Research Development Corporation
    Inventors: Shintarou Hattori, Takayuki Takahagi, Akira Ishitani
  • Patent number: 5007373
    Abstract: A spiral hollow cathode having adjacent layers which are equivalent to a two-dimensional array of small hollow cathodes. The cathode may be used for producing large area electron beams and for plasma-assisted deposition of films such as diamond over a large area without requiring heating external to the plasma itself.
    Type: Grant
    Filed: May 24, 1989
    Date of Patent: April 16, 1991
    Assignee: Ionic Atlanta, Inc.
    Inventors: Keith O. Legg, Yonhua Tzeng
  • Patent number: 5007374
    Abstract: An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: April 16, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shinji Imatou, Mitsunori Tsuchiya, Kenji Itoh, Takashi Inushima, Atsushi Kawano
  • Patent number: 5008132
    Abstract: Finely divided silicon carbide materials, particularly powders, whiskers and short fibers, are provided with a titanium nitride surface coating by the process of (i) placing a low carbon diffusivity layer atop the silicon carbide, (ii) placing a titanium metal coating atop the low carbon diffusivity layer, and (iii) nitriding the titanium metal.
    Type: Grant
    Filed: June 6, 1989
    Date of Patent: April 16, 1991
    Assignee: Norton Company
    Inventors: Shih-Yee Kuo, Hyun-Sam Cho, Jeffrey D. Bright
  • Patent number: 5006366
    Abstract: A photoluminescent material used for detection of infrared light is prepared using a base material, first and second dopants, a carbonate of the base material, and a fusible salt. The base material is an alkaline earth metal sulfide such as strontium sulfide. Strontium carbonate is used to decrease phosphorescence after charging, whereas lithium fluoride is used to allow the material to be fused together. Samarium oxide and europium oxide are used as the first and second dopants for establishing a communication band for luminescence and a trapping level, respectively. The photoluminescent material is made according to a process involving drying the material, heating the material in a graphite crucible to a fusing temperature in a dry inert atmosphere, grinding the material after cooling, and reheating the material to below the fusing temperature, but sufficiently high to repair the crystal surfaces. The material is then placed in a transparent binder and applied to a substrate.
    Type: Grant
    Filed: June 8, 1989
    Date of Patent: April 9, 1991
    Assignee: Quantex Corporation
    Inventor: Joseph Lindmayer
  • Patent number: 5006187
    Abstract: A method of making a plugged microporous film from a film which comprises a structural component having pores extending therethrough, and a plugging material within the pores, the method comprising:(a) selectively treating the plugging material so that its susceptibility to a crosslinking treatment differs from a first region of the film to a second region thereof;(b) crosslinking the plugging material at the second region of the film; and(c) removing the uncrosslinked plugging material from the first region of the film leaving plugs of crosslinked plugging material in the pores at the second region of the film.
    Type: Grant
    Filed: June 15, 1989
    Date of Patent: April 9, 1991
    Assignee: Scimat Limited
    Inventors: John A. Cook, Raymond W. Singleton
  • Patent number: 5006363
    Abstract: Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.
    Type: Grant
    Filed: December 6, 1989
    Date of Patent: April 9, 1991
    Assignee: Matsushita Electric Industries Co., Ltd.
    Inventors: Eiji Fujii, Hideo Torii, Masaki Aoki
  • Patent number: 5006365
    Abstract: The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photo-recording mediums.
    Type: Grant
    Filed: October 28, 1988
    Date of Patent: April 9, 1991
    Assignee: Kabushiki Kaisha Komatsu Seisakusho
    Inventors: Takashi Nire, Takehito Watanabe
  • Patent number: 5006371
    Abstract: An improved highly erosive and abrasive wear resistant multi-layered coating system on a substrate which provides protection against impact of large particles is disclosed comprising a plurality of composite layers. In each of the composite layers, the first layer closest to the substrate comprises tungsten of sufficient thickness to confer substantial erosion and abrasion wear resistance characteristics to the coating system and a second layer deposited on the first layer comprises a mixture of tungsten and tungsten carbide and the tungsten carbide comprises W.sub.2 C, W.sub.3 C, or a mixture of both. Because the resulting coating system has enhanced high cycle fatigue strength over the substrate, the coating system is especially useful on such structures as turbine blades and similar articles of manufacture where such chemical vapor depositing the first and second layers at a temperature in the range of about 300.degree. to about 550.degree. C.
    Type: Grant
    Filed: March 8, 1990
    Date of Patent: April 9, 1991
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Diwakar Garg, Ernest L. Wrecsics, Leslie E. Schaffer, Carl F. Mueller, Paul N. Dyer, Keith R. Fabregas
  • Patent number: 5004721
    Abstract: The present invention relates to an electron beam coevaporation method of preparing an oxide superconducting film on a silicon or an aluminum oxide substrate at a temperature below 600.degree. C. without the need for post-annealing, which comprises evaporating metallic superconductor precursor components onto a heated substrate from individual evaporation sources while directing oxygen plasma over the substrate surface wherein the evaporation sources and the substrate are located in two different vacuum chambers, a differential pressure is maintained between the two vacuum chambers during deposition so that the lowest pressure is at the evaporation sources, an intermediate pressure in the vacuum chamber surrounding the substrate and the highest pressure at the substrate surface.
    Type: Grant
    Filed: November 3, 1988
    Date of Patent: April 2, 1991
    Assignees: Board of Regents, The University of Texas System, Motorola, Inc.
    Inventor: A. L. DeLozanne
  • Patent number: 5002794
    Abstract: A method of controlling the chemical structure of thin films formed by plasma deposition and films produced by these methods, is disclosed. An important aspect of the method involves controlling the temperature of the substrate and the reactor so as to create a temperature differential between the substrate and reactor such that the precursor molecules are preferentially adsorbed or condensed onto the substrate either during plasma deposition or between plasma deposition steps. The thin films produced by the methods of this invention exhibit more defined and predictable chemical structures and properties than conventional plasma deposited films.
    Type: Grant
    Filed: August 31, 1989
    Date of Patent: March 26, 1991
    Assignee: The Board of Regents of the University of Washington
    Inventors: Buddy D. Ratner, Gabriel P. Lopez
  • Patent number: 5002011
    Abstract: A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor carrier to hold the substrates respectively, a driving motor for rotating the susceptor carrier such that the substrates held by the susceptors are revolved with respect to the reactor vessel, and a converting mechanism for converting a rotating motion of the susceptor carrier rotated by the driving motor into a motion for rotating the susceptors together with the substrates around themselves. The converting mechanism is disposed within the hollow of the susceptor carrier.
    Type: Grant
    Filed: April 13, 1988
    Date of Patent: March 26, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshimitsu Ohmine, Keiichi Akagawa, Akira Ishihata
  • Patent number: 5002928
    Abstract: A thin film of a superconductor comprising composite metal oxides is formed by atomizing and spraying a homogeneous solution or solutions containing as solutes one or more of metal compounds capable of forming the superconductor, with an ultrasonic wave sprayer, onto a hot substrate to form the thin film, and the ultrasonic wave sprayer for forming the thin film of the superconductor comprises an ultrasonic wave-generating vibrator, feedstock supplier, atomized solution-escaping inhibitor, substrate supporter and heater, the ultrasonic wave-generating vibrator being connected through an axis to a solution-atomizing nozzle.
    Type: Grant
    Filed: November 9, 1989
    Date of Patent: March 26, 1991
    Assignee: TOA Nenryo Kogyo Kabushiki Kaisha
    Inventors: Keitaro Fukui, Osamu Nakamura, Yasushi Okayama, Atsushi Tsunoda
  • Patent number: 5001110
    Abstract: A solution for forming a superconductive thin film prepared by dissolving a mol of a compound selected from group A consisting of alkoxides and alkoxyalkoxides of a rare earth metal element; b mol of a compound selected from group B consisting of alkoxides and alkoxyalkoxides of Ba, Sr and Ca; and c mol of a compound selected from group C consisting of alkoxides and alkoxyalkoxides of Cu in e liter of a compound selected from group E, a solvent selected from alcohols together with d mol of a compound selected from group D for inhibiting hydrolysis action such as an amine, a ketone and a glycol, such that the following relationships:0.1.times.(a+b+c).ltoreq.d.ltoreq.3.times.(a+b+c)and0.01.ltoreq.[(a+b+c)/e].ltoreq.3can be satisfied.
    Type: Grant
    Filed: July 14, 1989
    Date of Patent: March 19, 1991
    Assignee: Toray Industries, Inc.
    Inventors: Toshihisa Nonaka, Keisuke Kobayashi, Hiroyuki Igaki, Michiyasu Matsuki
  • Patent number: 5000114
    Abstract: In a continuous vacuum vapor deposition system, a reduced-pressure chamber is partitioned into a plurality of sub-chambers by seal devices each formed by one set of three pinch rolls arrayed in parallel on one plane or a single seal roll, and a pair of seal bars positioned on the same plane on the respective sides of the pinch roll or seal roll. Gaps between the pinch rolls or seal roll and seal bars are adapted to allow the base plate portions on the inlet side and on the outlet side, respectively, to pass therethrough. In each of the reduced-pressure sub-chambers are disposed a pair of deflector rolls so that the base plate portions on the inlet side and on the outlet side may be wrapped respectively around the pinch rolls or seal roll with a wrapping angle of 10 degrees or more.
    Type: Grant
    Filed: April 11, 1989
    Date of Patent: March 19, 1991
    Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
    Inventors: Kenichi Yanagi, Toshio Taguchi, Hajime Okita, Heizaburo Furukawa, Susumu Kamikawa
  • Patent number: 5000986
    Abstract: A method for forming metallized coatings on ceramics for high-temperature uses above about 630.degree. C. comprising the steps of: preparing a metallizing composition of mixed ingredients of differing sizes, proportioning the differing sizes to have nonsegregating qualities when applied onto the ceramics, coating the metallizing composition on the ceramics; and heating to form the desired metallized layer.
    Type: Grant
    Filed: December 14, 1988
    Date of Patent: March 19, 1991
    Inventor: Chou H. Li
  • Patent number: 4999219
    Abstract: Disclosed is a method for applying a continuous protective coating to the surface of individual phosphor particles. The method involves chemical vapor deposition of an aluminum oxide coating on individual particles of a phosphor powder while the particles are suspended in a fluidized bed. The particles in the fluidized bed are exposed to vaporized coating precursor material, preferably aluminum isopropoxide at a temperature above 300.degree. C. The bed is kept at as nearly an isothermal condition as possible. Prior to entering the fluidized bed the aluminum isopropoxide is vaporized and kept at a temperature less than the decomposition temperature of aluminum isopropoxide. Mechanical means are used to help increase the fluidization efficiency of the fluidized bed. After coating the phosphor particles for approximately 30 minutes the vaporized precursor material is shut off from the bed entrance and the oxygen flow rate to the fluidized bed is increased.
    Type: Grant
    Filed: November 7, 1989
    Date of Patent: March 12, 1991
    Assignee: GTE Laboratories Incorporated
    Inventors: Keith A. Klinedinst, Richard A. Gary