Abstract: A recipe selection method includes obtaining measurements from metrology targets, metrology targets positioned on a semiconductor substrate, obtaining measurements from in-device targets, in-device targets positioned on the semiconductor substrate, and determining a recipe for accurate metrology using both metrology target measurements and in-device metrology measurements.

Abstract: An overlay metrology tool may include an illumination source to generate a first illumination beam distribution with a first linear polarization and a second illumination beam distribution with a second linear polarization orthogonal to the first linear polarization, an illumination sub-system to sequentially illuminate two or more cell pairs of an overlay target on a sample having orthogonally oriented grating-over-grating structures, a collection sub-system with two collection channels to capture collected light from an illuminated cell pair and filtering optics to direct light from different cells in an illuminated cell pair to different collection channels for detection. The tool may further include a controller to generate separate overlay measurements for orthogonally-oriented grating-over-grating structures in the two or more cell pairs.

Abstract: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.

Abstract: Apparatus for, and method of, measuring a parameter of an alignment mark on a substrate in which an optical system is arranged to receive at least one diffraction order from the alignment mark and the diffraction order is modulated at a pupil or a wafer conjugate plane of the optical system, a solid state optical device is arranged to receive the modulated diffraction order, and a spectrometer is arranged to receive the modulated diffraction order from the solid state optical device and to determine an intensity of one or more spectral components in the modulated diffraction order.

Abstract: The present disclosure provides a hypertube system for detecting a position of a hypertube vehicle, including a hypertube vehicle, a tube configured to surround a travel path of the hypertube vehicle, At least one LiDAR sensor each mounted on an inner wall of the tube and including a laser transmitter configured to irradiate a laser beam toward the hypertube vehicle and a laser receiver configured to detect a laser, and a reflector configured to reflect the laser irradiated from the LiDAR sensor, wherein the reflector may be disposed in the hypertube vehicle, and wherein the laser beam reflected from the reflector reaches the laser receiver of the LiDAR sensor to be used in detecting the position of the hypertube vehicle.

Abstract: The present disclosure relates to systems and methods relating to the fabrication of light guide elements. An example system includes an optical component configured to direct light emitted by a light source to illuminate a photoresist material at one or more desired angles so as to expose an angled structure in the photoresist material. The photoresist material overlays at least a portion of a first surface of a substrate. The optical component includes a container containing a light-coupling material that is selected based in part on the one or more desired angles. The system also includes a reflective surface arranged to reflect at least a first portion of the emitted light to illuminate the photoresist material at the one or more desired angles.

Abstract: A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A method, device, apparatus and a computer-readable storage medium for detecting a height of an obstacle are provided. The method can include: acquiring observation data of a plurality of reference obstacles from a frame; according to the observation data of each of the reference obstacles, fitting a function F: Z=F(ymax), wherein the observation data of a reference obstacle comprises a longitudinal coordinate of a bottom of the reference obstacle in the frame, and a distance between the reference obstacle and a camera capturing the frame; and determining a distance between the obstacle to be detected and the camera, according to the longitudinal coordinate of the bottom of the obstacle in the frame and the function F; and determining an evaluation value of the height of the obstacle to be detected according to the distance between the obstacle to be detected and the camera.

Abstract: A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle with UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.

Abstract: A system and method for measuring. The system has at least one rail with a downstream end and an upstream end. There is a deflector at a downstream end which is used in conjunction with a measurement laser which is coupled to a shuttle. The shuttle is moveable relative to the rail. The shuttle also has a sight for zeroing in on the item to be measured.

Abstract: The present application relates to contact immersion lithography exposure units and methods of their use. An example contact exposure unit includes a container configured to contain a fluid material and a substrate disposed within the container. The substrate has a first surface and a second surface, and the substrate includes a photoresist material on at least the first surface. The contact exposure unit includes a photomask disposed within the container. The photomask is optically coupled to the photoresist material by way of a gap comprising the fluid material. The contact exposure unit also includes an inflatable balloon configured to be controllably inflated so as to apply a desired force to the second surface of the substrate to controllably adjust the gap between the photomask and the photoresist material.

Abstract: Disclosed are mask layout correction methods and a method for fabricating semiconductor devices. The mask layout correction method comprises performing a first optical proximity correction on an initial pattern layout. The step of performing the first optical proximity correction includes providing a target pattern of the initial pattern layout with control points based on a first model, obtaining a predicted contour of the initial pattern layout by performing a simulation, and obtaining an error between the target pattern and the predicted contour from the control points. The control points include first control points on an edge of the target pattern and second control points in an inside of the target pattern. The step of obtaining the error includes acquiring first error values from the first control points, providing weights to the first error values, and acquiring second error values from the second control points.

Abstract: A method of applying a measurement correction includes determining an orthogonal subspace used to characterize the measurement as a plot of data. A first axis of the orthogonal subspace corresponds to constructive interference output from an interferometer of the metrology system plus a first error variable and a second axis of the orthogonal subspace corresponds to destructive interference output from the interferometer of the metrology system plus a second error variable. The method also includes determining a slope of the plot of data and determining a fitted line to the plot of data in the orthogonal subspace based on the slope.

Abstract: The present disclosure relates to a speckles detection system for detecting one or more speckles on a surface of an optical element of an image capturing device. The system comprises: one or more light sources configured to emit a light beam towards the optical element, the optical element being configured to reflect light from the light sources when speckles are located on the surface of the optical element. The system further comprises one or more light receivers configured to receive the light beam reflected by the optical elements such that speckles on the surface of the optical elements are detected. Methods for detecting one or more speckles on a surface of an optical element of an image capturing device are also provided.

Abstract: A method, system and computer program product for determination of a metrology target design, comprising generating a first candidate target design for a selected design type compatible with one or more metrology tools or and a set of boundaries for a simulation range Measurement of the first target design with the one or more metrology tools within the boundaries of the simulation range is simulated for two or more measurement settings to generate one or more performance metrics. Simulating the measurement takes into account layer properties of one or more layers in a stack profile. The optimal design is determined from at least the performance metrics based on one or more selection criteria and then sent or stored.

Abstract: An apparatus for and method of cleaning a surface of a support structure in a lithographic system in which a cleaning substrate has at least one motor which causes the cleaning substrate to move laterally across the surface. The cleaning substrate may be provided with a power supply mounted on the cleaning substrate and selectably electrically connectable to the motor.

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

Abstract: A wavelength control method of a laser apparatus includes sequentially obtaining target wavelength data of a pulse laser beam, sequentially saving the target wavelength data, sequentially measuring a wavelength of the pulse laser beam to obtain a measured wavelength, calculating a wavelength deviation using the measured wavelength and the target wavelength data at a time before a time when the measured wavelength is obtained, and feedback-controlling the wavelength of the pulse laser beam using the wavelength deviation.

Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.