Abstract: A semiconductor device includes a substrate having a cell region and a connection region adjacent to the cell region. A lower stack structure and an upper stack structure are disposed on the substrate. A channel structure is provided to pass through the upper stack structure and the lower stack structure. A distance between a lower extension line portion included in an uppermost one of a plurality of lower interconnection layers and an upper extension line portion included in a lowermost one of a plurality of upper interconnection layers is less than a distance between a lower gate electrode portion included in the uppermost one of the plurality of lower interconnection layers and an upper gate electrode portion included in the lowermost one of the plurality of upper interconnection layers.

Abstract: A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a plurality of first energy-sensitive patterns over the target layer. The method also includes forming a lining layer conformally covering the first energy-sensitive patterns. A first opening is formed over the lining layer and between the first energy-sensitive patterns. The method further includes filling the first opening with a second energy-sensitive pattern, and performing an etching process to form a plurality of second openings and a third opening in the target layer, wherein the third opening is between the second openings, and the second openings and the third opening have different depths.

Abstract: A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.

Abstract: A display panel and a display device are provided. The display panel includes a first display area and a second display area corresponding to a position of an electronic component, wherein a light transmittance of the second display area is greater than a light transmittance of the first display area. A plurality of pixel units are disposed in the second display area, a ratio of a number of the first sub-pixels to the second sub-pixels and the third sub-pixels is 1:1:2 in each of the pixel units of the second display area, and by providing pixels with larger intervals in the second display area, a light transmittance above the electronic component is increased.

Abstract: A flat bonding method of light emitting devices including bonding light emitting devices on a circuit board using a reflow process, and re-bonding at least a portion of the light emitting devices bonded on the circuit board using a press plate while pressing the portion of the light emitting devices.

Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A multilayer composite film is on the P-type layer, the multilayer composite film comprising: a current spreading layer on the P-type layer, the current spreading layer having a first portion and a second portion; a dielectric layer on the second portion of the current spreading layer; a via opening defined by sidewalls in the dielectric layer and the first portion of the current spreading layer; and a P-contact layer in the via opening on the first portion of the current spreading layer, the sidewalls in the dielectric layer, and on at least a portion of the dielectric layer.

Abstract: A selectable-repairing micro light emitting diode display is provided. A backplane includes a plurality of transistor units. A plurality of pixel units are disposed on the backplane, and each of the pixel units includes a plurality of original sub-pixel units and at least one selectable-repairing sub-pixel unit. Each of the original sub-pixel units includes a set of original pad. The set of original pad is disposed on the backplane and connected to one of the transistor units. The at least one selectable-repairing sub-pixel unit is arranged between two of the original sub-pixel units next to each other and having different colors, and includes a set of repairing pad. The set of repairing pad is not connected to the transistor units. A plurality of micro light emitting elements are electrically connected to the sets of original pad and controlled to emit light through the corresponding transistor units, respectively.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: A transparent display apparatus includes a first transparent substrate, light emitting units arranged for respective pixels on the first transparent substrate, and a strip unit connected to the light emitting units, wherein each of the light emitting units includes at least one light emitting diode having a size of area of 10,000 ?m2 or less, and a size of area having a transmittance of 20% or less accounts for 30% or less of a display area.

Abstract: A display panel and a display apparatus are provided. The display panel includes an active area and a non-active area located at least on one side of the active area, wherein the non-active area includes a first fanout area; a plurality of sub-pixels located in the active area; a plurality of data lines located in the active area and extending from the active area to the first fanout area, the plurality of data lines electrically connected to the plurality of sub-pixels and configured to provide data signals for the plurality of sub-pixels; the first fanout area includes at least two data line fanout sub-areas, and the plurality of data lines are respectively located in the at least two data line fanout sub-areas.

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Abstract: A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 ?m.

Abstract: The present disclosure provides an in-line type point control lamp and a lamp string structure, which relate to the technical field of point control lamps, and include: a patch lamp bead and an in-line LED bracket; by providing two power lines and one signal line on the patch lamp bead, the separately provided signal line is used to transmit the signal, and the power line and the signal line are fixed on the power connecting part and the signal connecting part respectively.

Abstract: A lighting device comprising: a first LED having a wavelength of maximum emission intensity from 620 nm to 640 nm; a second LED having a wavelength of maximum emission intensity from 500 nm to 565 nm; a third LED having a wavelength of maximum emission intensity from 430 nm to 480 nm; and a fourth LED for generating light comprising a CCT in a range from 1800K to 5000K. The first LED comprises a Phosphor-Converted LED comprising a first LED chip having a maximum emission intensity wavelength from 400 nm to 480 nm, and a narrowband red phosphor with a FWHM less than 55 nm. Light generated by the device comprises a combination of light generated by the first, second, third, and fourth LEDs and a CCT of light generated by the device is tunable by independently controlling power to the first, second, third, and fourth LEDs.

Abstract: A display device comprises a first electrode, a second electrode disposed to be spaced apart from the first electrode and face the first electrode, a first insulating layer disposed to cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer and exposing at a part of a region where the first electrode and the second electrode overlaps the first insulating layer and at least one light emitting element on the exposed first insulating layer between the first electrode and the second electrode, wherein the second insulating layer includes at least one opening exposing the first insulating layer and disposed to be spaced apart from each other on a region where the first electrode and the second electrode face each other, and a bridge portion between the openings, and the light emitting element is disposed on the opening.

Abstract: A method for transferring micro light emitting diodes (micro-LEDs) includes forming a plurality of micro light emitting diode (micro-LED) chips having an epitaxial stacked layer and an electrode on a base; attaching the electrodes of the micro-LED chips to a temporary substrate and removing the base from the micro-LED chips; forming a light shielding layer on the temporary substrate; forming a light-transmissible packaging layer to cover the light shielding layer and the micro-LED chips; removing the temporary substrate to form a light emitting assembly; dividing the light emitting assembly to separate a plurality of pixels constituted by the micro-LEDs; and transferring the pixels to a permanent substrate.

Abstract: A method for manufacturing a light emitting device includes preparing a light emitting device including: a package defining a recess; a first light source placed within the recess, and including a first light emitting element and a first wavelength conversion member; a second light source placed within the recess; and a second wavelength conversion member in contact with and covering the first light source and the second light source, the first light source and the second light source being configured to emit light independently of each other. The method further includes: emitting light simultaneously from the first light source and the second light source to obtain mixed light for which light from the first light source, light from the second light source, and light from the second wavelength conversion member are mixed; determining a chromaticity of the mixed light; and binning the mixed light based on the chromaticity.

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

Abstract: A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

Abstract: A display device includes: a display having two display panels each having a display-side inclined surface near an outer edge of a display surface, the display being configured to allow parallel arrangement of the two display panels such that the respective inclined surfaces face each other at a joint of the two display panels to form a gap between the inclined surfaces; and at least one translucent part protruding from the display-side inclined surface toward the adjacent display panel in the gap, wherein the translucent part includes in the gap a translucent-side inclined surface that is inclined from one side of the display panel to the other while extending in a direction where the adjacent display panel parts are arrayed.