Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

Abstract: A concentration control apparatus capable of appropriately making a zero adjustment of a concentration measurement mechanism without interrupting a semiconductor manufacturing process includes: a control valve that controls gas flowing through a lead-out flow path; a concentration measurement mechanism that measures the concentration of source gas contained in gas flowing through the lead-out flow path; a concentration controller that controls the control valve so that the deviation between measured concentration measured by the concentration measurement mechanism and preset set concentration decreases; a judgement time point determination part that determines a judgement time point that is the time point when the gas present in a measurement part where the concentration measurement mechanism performs the concentration measurement has been replaced with other gas; and a zero adjustment part that makes a zero adjustment of the concentration measurement mechanism at or after the judgement time point.

Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

Abstract: A film deposition apparatus includes a process chamber, and a turntable in the process chamber to receive a substrate. An exhaust port is provided outside the turntable to evacuate the process chamber. An exhaust box is provided in a space between a ceiling surface of the process chamber and the surface of the turntable so as to surround a certain region along the circumferential direction and a radial direction by side walls so as to include a region upstream of the exhaust port in a rotational direction of the turntable. A gas supply unit to supply a gas into the exhaust box is provided. The exhaust box includes an outflow port in a side wall closest to the exhaust port such that a conductance of a gas flowing from the exhaust box increases with increasing distance from the exhaust port.

Abstract: A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

Abstract: Apparatus and methods for processing substrates using a gas injector unit with a quartz plate are provided. The gas injector unit comprises an injector body with a first opening extending through the injector body. The first opening has a nut portion and a clamp portion. A nut is positioned within the nut portion spaced from the injector body by a spring. A clamp is positioned within the clamp portion, which may be remotely located on a hub for connection with the injector body. A screw extends through the opening in the clamp, a portion of the injector body, the spring and into a connection portion of the nut. Gas distribution assemblies and processing chambers incorporating the gas injector unit are also described.

Abstract: In the present invention, a gas passing groove, a high-voltage electrode groove and a ground electrode groove formed in an electrode unit base are each spiral in plan view. A high-voltage electrode is embedded in the high-voltage electrode grove, and a ground electrode is embedded in the ground electrode groove. The high-voltage electrode and the ground electrode are arranged on sides of opposite side surfaces of the gas passing groove in the electrode unit base to oppose each other with a portion of the electrode unit base and the gas passing groove therebetween, and are spiral in plan view along with the gas passing groove.

Abstract: Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Abstract: An apparatus for processing a substrate is provided. The apparatus comprises a processing chamber and a showerhead. The showerhead is in the processing chamber and has a plurality of first holes with a first size in a first zone of the showerhead and a plurality of second holes with a second hole size in a second zone of the showerhead. The first hole size is different from the second hole size. The first zone is surrounded by the second zone. An area of the first zone is larger than an area of the second zone.

Abstract: Methods and apparatus for selective gas injection and extraction for use in a substrate processing chamber are provided herein. In some embodiments, a gas injection and extraction apparatus includes a plate having a plurality of apertures through a thickness of the plate, each aperture of the plurality of apertures having an aperture wall; a plurality of tubes, each tube partially disposed within one of the plurality of apertures, wherein a disposed portion of each of the tubes is spaced apart from at least a portion of the aperture wall of the aperture in which it is disposed, thereby forming an interstice between at least a portion of the aperture wall and the disposed portion of the tube; a gas supply fluidly coupled to each of the tubes; and a vacuum source fluidly coupled to each of the interstices.

Abstract: A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first plate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction. The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a shroud for controlling gas flow in a process chamber includes a closed walled body having an upper end and a lower end, the closed walled body defining a first opening of the shroud at the lower end and a second opening of the shroud at the upper end, wherein the second opening is offset from the first opening; and a top wall disposed atop a portion of the upper end of the closed walled body in a position above the first opening to define, together with a remaining portion of the upper end of the closed walled body, the second opening, wherein the shroud is configured to divert a gas flow from the second opening through the first opening.

Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract: A source gas supply apparatus that supplies a source gas into a processing container, includes: a raw material container configured to contain a raw material, and to vaporize the raw material; a source gas supply flow path configured to supply the source gas including the vaporized raw material into the processing container; a flow rate measurement part installed in the source gas supply flow path, and configured to measure a flow rate of the source gas; a diluent gas supply flow path joining a downstream side of the flow rate measurement part in the source gas supply flow path, and configured to supply a diluent gas for diluting the source gas; and a gas mixer provided at a merging portion of the source gas supply flow path and the diluent gas supply flow path, and configured to mix the source gas with the diluent gas via a Venturi effect.

Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.