Abstract: A white light emitting device is provided. The white light emitting device includes a blue light emitting diode configured to emit blue light having a peak wavelength in a first range of 440 nm to 455 nm; a first wavelength conversion material, based on being excited by the blue light, emits first light having a peak wavelength in a second range of 535 nm to 550 nm and a full width at half maximum (FWHM) of 60 nm or less; and a second wavelength conversion material, based on being excited by the blue light, emits second light having a peak wavelength in a third range of 620 nm to 660 nm, wherein a melanopic photopic ratio of white light emitted from the white light emitting device is 0.65 or less, and a color rendering index (CRI) of the white light is 80 or more.

Abstract: A display device includes a curved plastic substrate, a display element layer over a first surface of the plastic substrate, a thin film encapsulation layer over the display element layer, a light absorption layer curved in conformity with the plastic substrate, the light absorption layer being over a second surface of the plastic substrate, the second surface being opposite to the first surface, a cushion layer over a fourth surface of the light absorption layer, a third surface of the light absorption layer facing the plastic substrate, and the fourth surface of the light absorption layer being opposite the third surface, and an electrostatic shielding layer over the cushion layer, at least one of the cushion layer and the electrostatic shielding layer has a cut pattern in a thickness direction thereof.

Abstract: An integrated circuit device includes: a substrate having a cell region, a peripheral circuit region, and an interconnection region between the cell region and the peripheral circuit region; a first cell stack structure and a second cell stack structure on the first cell stack structure, each including a plurality of insulating layers and a plurality of word line structures alternately stacked on the substrate; and a dummy stack structure located at a same vertical level as the second cell stack structure, and including a plurality of dummy insulating layers and a plurality of dummy support layers alternately stacked in the peripheral circuit region.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: Embodiments of a three-dimensional (3D) memory device and fabrication methods thereof are disclosed. In an example, a method for forming a 3D memory device includes the following operations. A dielectric stack is formed to have interleaved sacrificial layers and dielectric layers. A stair is formed in the dielectric stack. The stair includes one or more sacrificial layers of the sacrificial layers and one or more dielectric layers of the dielectric layers. The stair exposes one of the sacrificial layers on a top surface and the one or more sacrificial layers on a side surface. An insulating portion is formed to cover the side surface of the stair to cover the one or more sacrificial layers. A sacrificial portion is formed to cover the top surface of the stair. The sacrificial portion is in contact with the one of sacrificial layers. The one or more sacrificial layers and the sacrificial portion are replaced with one or more conductor layers.

Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Abstract: A semiconductor device including a substrate; a horizontal conductive layer disposed on the substrate; a support layer disposed on the horizontal conductive layer; a stack structure including a plurality of gate electrodes, stacked to be spaced apart from each other in a direction perpendicular to an upper surface of the support layer, and a plurality of interlayer insulating layers stacked alternately with the plurality of gate electrodes; a channel structure penetrating through the stack structure; a separation structure penetrating through the horizontal conductive layer, the support layer, and the stack structure and extending in a first direction; and a conductive pattern disposed on a level between the horizontal conductive layer and a lowermost interlayer insulating layer, among the plurality of interlayer insulating layers, and protruding outwardly of the separation structure from a side surface of the separation structure.

Abstract: A 3D semiconductor device, the device including: a first level including first single crystal transistors; and a second level including second single crystal transistors, where the first level is overlaid by the second level, where a vertical distance from the first single crystal transistors to the second single crystal transistors is less than eight microns, where the second level includes a layer transferred and bonded level, where the bonded includes oxide to oxide bonds, where the first level includes a plurality of processors, and where the second level includes a plurality of memory cells.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

Abstract: An optoelectronic component may include a layer sequence having an active layer configured to emit an electromagnetic primary radiation and a conversion element arranged in the beam path of the primary radiation. The conversion element may include a conversion layer and a conversion potting arranged over the conversion layer. The conversion layer may include a first matrix material and a converter material, and the conversion potting may include a second matrix material and a converter material. There may be a jump in concentration of converter material between the conversion layer and the conversion potting.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.

Abstract: The present invention relates to method for producing LED by one step film lamination. The method comprises: laminating two or more LEDs with two or more colored phosphor films by one step film lamination; wherein each of the colored phosphor film comprises each other different colored phosphor composition which has a Maximum tan ?; and the difference of each Maximum tan ? varies within a range of 0-30%. In the present invention, the method for producing a LED may greatly improve production efficiency (i.e., dual and multi-color LEDs in one step) and lower cost of ownership. Further, it may improve uniformity of phosphor dispersion, thereby improve color quality of LEDs.

Abstract: A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive material and insulative material arranged in tiers. The stack structure has blocks separated from one another by first dielectric slot structures. Each of the blocks comprises two crest regions, a stadium structure interposed between the two crest regions in a first horizontal direction and comprising opposing staircase structures each having steps comprising edges of the tiers of the stack structure, and two bridge regions neighboring opposing sides of the stadium structure in a second horizontal direction orthogonal to the first horizontal direction and having upper surfaces substantially coplanar with upper surfaces of the two crest regions. At least one second dielectric slot structure is within horizontal boundaries of the stadium structure in the first horizontal direction and partially vertically extends through and segmenting each of the two bridge regions.

Abstract: A microelectronic device includes a pair of stack structures. The pair comprises a lower stack structure and an upper stack structure overlying the lower stack structure. The lower stack structure and the upper stack structure each comprise a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A source region is vertically interposed between the lower stack structure and the upper stack structure. A first array of pillars extends through the upper stack structure, from proximate the source region toward a first drain region above the upper stack structure. A second array of pillars extend through the lower stack structure, from proximate the source region toward a second drain region below the lower stack structure. Additional microelectronic devices are also disclosed, as are related methods and electronic systems.

Abstract: A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically ove

Abstract: A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a doped semiconductor pattern including a body portion and a first protrusion protruding from the body portion in a first direction, a first channel pattern disposed on a top surface of the first protrusion and extending in the first direction, a first memory pattern surrounding a sidewall of the first channel pattern and extending on a sidewall of the first protrusion, and interlayer insulating layers and conductive patterns alternately stacked on each other in the first direction.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

Abstract: Integrated circuitry comprising a memory array comprises strings of memory cells comprising laterally-spaced memory blocks individually comprising a first vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a horizontally-elongated conductive line. A second vertical stack is aside the first vertical stack. The second vertical stack comprises an tipper portion and a lower portion. The upper portion comprises vertically alternating first tiers and second insulating tiers that are of different composition relative one another. The lower portion comprises an upper polysilicon-comprising layer, a lower polysilicon-comprising layer, an intervening-material layer vertically between the tipper and lower polysilicon-comprising layers.