Patents Examined by Stephanie P Duclair
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Patent number: 11569135Abstract: To provide a wavelength selection method or a plasma processing method to achieve accurate detection of residual thickness or etching amount, there is provided a plasma processing method, in which a processing object wafer is disposed within a processing chamber in the inside of a vacuum container, and plasma is generated by supplying a processing gas into the processing chamber and used to process a processing-object film layer beforehand formed on a surface of the wafer, and at least two wavelengths are selected from among wavelengths with large mutual information in emission of a plurality of wavelengths of plasma generated during processing of the processing-object film layer, and a temporal change in the emission of at least the two wavelengths is detected, and an endpoint of the processing of the film layer is determined based on a result of the detection.Type: GrantFiled: December 23, 2019Date of Patent: January 31, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yohei Kawaguchi, Tatehito Usui, Shigeru Nakamoto
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Patent number: 11560495Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.Type: GrantFiled: January 22, 2021Date of Patent: January 24, 2023Assignee: SAMSUNG SDI CO., LTD.Inventors: Won Jung Kim, Yoon Young Koo, Tae Won Park, Eui Rang Lee, Jong Won Lee, Youn Jin Cho
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Patent number: 11527414Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.Type: GrantFiled: July 7, 2021Date of Patent: December 13, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Nancy Fung, Gabriela Alva
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Patent number: 11518913Abstract: A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.Type: GrantFiled: August 27, 2020Date of Patent: December 6, 2022Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Lin Fu, Jason A. Sherlock, Long Huy Bui, Douglas E. Ward
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Patent number: 11499078Abstract: A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and an Rsp value calculated by Formula (1) below is 1.60 or more: Rsp=(Tb/Tav)?1??(1) [in the formula, Tav represents a relaxation time (unit: ms) obtained by pulsed NMR measurement of the slurry in a case where a content of the abrasive grains is 2.0% by mass, and Tb represents a relaxation time (unit: ms) obtained by pulsed NMR measurement of a supernatant solution obtained when the slurry is subjected to centrifugal separation for 50 minutes at a centrifugal acceleration of 2.36×105 G in a case where the content of the abrasive grains is 2.0% by mass.Type: GrantFiled: September 25, 2018Date of Patent: November 15, 2022Assignee: SHOWA DENKO MATERIALS CO., LTD.Inventors: Tomomi Kukita, Tomohiro Iwano, Takaaki Matsumoto, Tomoyasu Hasegawa
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Patent number: 11488835Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.Type: GrantFiled: November 20, 2020Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rohan Puligoru Reddy, Anchuan Wang
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Patent number: 11482408Abstract: A method of processing a wafer having a first surface and a second surface opposite the first surface is provided. The method includes the steps of: holding the second surface of the wafer such that the first surface thereof is exposed; processing an exposed first surface side of an outer circumferential edge portion of the wafer with a processing tool including a grinding stone made of abrasive grains bound together by a bonding material, thereby forming on the outer circumferential edge portion a slanted surface that is inclined to the first surface so as to be progressively closer to the second surface in a direction from a central area of the wafer toward an outer circumferential edge thereof; and coating the first surface of the wafer with a liquid material according to a spin coating process, thereby forming a resist film on the first surface of the wafer.Type: GrantFiled: June 23, 2020Date of Patent: October 25, 2022Assignee: DISCO CORPORATIONInventor: Steve Latina
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Patent number: 11462413Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.Type: GrantFiled: July 16, 2020Date of Patent: October 4, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., MATTSON TECHNOLOGY, INCInventors: Shanyu Wang, Chun Yan, Hua Chung, Michael X. Yang, Tsai Wen Sung, Qi Zhang
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Patent number: 11456179Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.Type: GrantFiled: July 14, 2020Date of Patent: September 27, 2022Assignee: Applied Materials, Inc.Inventor: Min Gyu Sung
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Patent number: 11456170Abstract: A cleaning solution includes a first solvent having Hansen solubility parameters 25>?d>13, 25>?p>3, and 30>?h>4; an acid having an acid dissociation constant, pKa, of ?11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.Type: GrantFiled: February 3, 2020Date of Patent: September 27, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: An-Ren Zi, Ching-Yu Chang
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Patent number: 11448806Abstract: A lithographic patterning of a resist is performed to create a mandrel over a substrate. A deposition of one or more functional materials on the mandrel is performed. And each functional material has a respective refractive index. A selective removal of the mandrel is performed to create a plurality of grating elements formed from the one or more functional materials. The plurality of grating elements are self-aligned and form a diffraction grating. Each grating element may have a heterogenous refractive index (e.g., substantial normal to and/or parallel to a surface of the substrate). The diffraction grating may be used in a near-eye display.Type: GrantFiled: March 15, 2021Date of Patent: September 20, 2022Assignee: Meta Platforms Technologies, LLCInventors: Matthew E. Colburn, Giuseppe Calafiore, Matthieu Charles Raoul Leibovici, Maxwell Parsons
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Patent number: 11450537Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: GrantFiled: February 28, 2020Date of Patent: September 20, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
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Patent number: 11441229Abstract: A method of selectively removing NiPt material from a microelectronic substrate, the method comprising contacting the NiPt material with an aqueous etching composition comprising: an oxidising agent; a strong acid; and a source of chloride.Type: GrantFiled: June 18, 2019Date of Patent: September 13, 2022Assignee: ENTEGRIS, INC.Inventor: SeongJin Hong
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Patent number: 11443947Abstract: A method for forming an etching mask includes forming a mask layer containing an organic material on a layer to be patterned using the etching mask in a subsequent etching process, processing the mask layer to form a pattern including an opening, forming a filling layer in the opening, impregnating the mask layer with a metal material, and removing the filling layer. The organic material in the mask layer includes reaction sites that react with the metal material, and the filling layer has fewer the reaction sites per the unit volume than the mask layer.Type: GrantFiled: February 28, 2020Date of Patent: September 13, 2022Assignee: KIOXIA CORPORATIONInventor: Hironobu Sato
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Patent number: 11443950Abstract: A method for figuring an optical surface of an optical element to achieve a target profile for the optical surface includes: applying a removal process to an extended region of the optical surface extending along a first direction to remove material from the extended region of the optical surface; adjusting a position of the optical surface relative to the removal process along a second direction perpendicular to the first direction to remove material from additional extended regions of the optical surface extending along the first direction at each of different positions of the optical surface along the second direction; and repeating the applying of the removal process and the adjusting of the optical surface relative to the removal process for each of multiple rotational orientations of the optical surface about a third direction perpendicular to the first and second directions to achieve the target profile of the optical surface.Type: GrantFiled: February 25, 2020Date of Patent: September 13, 2022Assignee: Zygo CorporationInventor: Andrew Nelson
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Patent number: 11437242Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.Type: GrantFiled: November 27, 2018Date of Patent: September 6, 2022Assignee: Applied Materials, Inc.Inventors: Jungmin Ko, Kwang-Soo Kim, Thomas Choi, Nitin Ingle
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Patent number: 11429065Abstract: A method of manufacturing a clock or watch component (19; 29) includes (i) providing (E11; E21) a wafer (11; 21) having a single slice (12; 22) including a material of the component, notably silicon, diamond, quartz, sapphire or ceramic, optionally first coating the lower surface of the slice (22) with a lower layer (24), (iii) etching (E12 to E14; E22 to E24) the slice (12; 22) starting from its upper surface to form at least one clock or watch component, (iv) revealing (E15; E25) at least one clock or watch component (19; 29), by removing a layer that served as a mask for etching (E15; E25) and (y) optionally releasing (E26) the slice and the at least one etched clock or watch component by removing the lower layer (24).Type: GrantFiled: November 28, 2018Date of Patent: August 30, 2022Assignee: ROLEX SAInventors: Richard Bossart, Nima Merk
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Patent number: 11424134Abstract: The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.Type: GrantFiled: August 27, 2020Date of Patent: August 23, 2022Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Prerna Sonthalia Goradia
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Patent number: 11421131Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.Type: GrantFiled: October 19, 2018Date of Patent: August 23, 2022Assignees: FUJIMI INCORPORATED, TOAGOSEI CO., LTD.Inventors: Kohsuke Tsuchiya, Hisanori Tansho, Yusuke Suga, Taiki Ichitsubo, Takayuki Takemoto, Naohiko Saito, Michihiro Kaai
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Patent number: 11401442Abstract: A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 ?S/cm or more, and a pH is 2 to 4.Type: GrantFiled: July 23, 2020Date of Patent: August 2, 2022Assignee: FUJIFILM CORPORATIONInventor: Tetsuya Kamimura