Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

Abstract: A process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting small amplitude defects, a process for producing an EUV mask blank using the inspection process, and an EUV mask blank obtainable by such a process. A process for inspecting a reflective mask blank for EUV lithography having a multilayer reflective film and an absorber layer. The process includes a first step of detecting in-plane defects in the multilayer reflective film by applying EUV light to the surface of the multilayer reflective film, a second step of detecting in-plane defects from the absorber layer by applying light having a wavelength of from 150 to 600 nm to the surface of the absorber layer, and a step of distinguishing phase defects and amplitude defects in the reflective mask blank by comparison between the first and second in-plane defect data.

Abstract: An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

Abstract: A mask blank wherein damage to a light semitransmissive film due to dry etching for removing a light shielding film is inhibited. Mask blank 100 has a light semitransmissive film 2 and light shielding film 4 laminated on a main surface of a transparent substrate 1. Film 2 can be dry etched with a fluorine-based gas. Film 4 has laminated lower layer 41 and upper layer 42. Lower layer 41 contained tantalum and id substantially free from hafnium, zirconium, and oxygen. Upper layer 42 contains tantalum and one or more of hafnium and zirconium and is substantially free from oxygen excluding the surface layer of the upper layer 42. Between the light semitransmissive film 2 and lower layer 41 is an etching stopper film 3 having etch selectivity with respect to the lower layer 41 in dry etching with an etching gas containing the chlorine-based gas and no oxygen gas.

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 ?m×1 ?m region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70?BA30)/(BD70?BD30)?60(%/nm) and maximum height (Rmax)?4.5 nm.

Abstract: A mask blank for EUV lithography (EUVL) excellent in in-plane uniformity of the peak reflectivity of light in the EUV wavelength region and in in-plane uniformity of the center wavelength of reflected light in the EUV wavelength region, at the surface of a multilayer reflective film, and a process for its production, as well as a substrate with reflective layer for EUVL to be used for the production of such a mask blank for EUVL, and a process for its production. A substrate with reflective layer for EUVL having a reflective layer for reflecting EUV light formed on a substrate, where the reflective layer is a multilayer reflective film having a low refractive index layer and a high refractive index layer alternately stacked plural times.

Abstract: A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.

Abstract: The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.

Abstract: Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.

Abstract: A method of optimizing a semiconductor mask layout is provided. The method includes accessing a digital file comprising the semiconductor mask layout, accessing processing condition parameters describing process conditions, receiving a request from a user of a mask layout system to initiate a semiconductor mask layout optimization process, applying a set of rules to insert an array of assist features into the semiconductor mask layout, and updating the digital file. The semiconductor mask layout includes a plurality of parallel mask features, wherein pairs of the parallel mask features share an end-to-end region between the parallel mask features of each pair, with an imaginary axis bisecting the end-to-end regions. Each assist feature is located proximate to at least one end-to-end region, and the imaginary axis intersects each assist feature. Related photomasks, design layout systems, and computer-readable media are also provided.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: The present invention addresses the problem of providing a pellicle which has high EUV transmittance and high strength, while being not susceptible to damage by heat. In order to solve the above-mentioned problem, the present invention provides a pellicle which comprises a pellicle film that has a refractive index (n) of light having a wavelength of 550 nm of 1.9-5.0 and a pellicle frame to which the pellicle film is bonded. The pellicle film has a composition that contains 30-100% by mole of carbon and 0-30% by mole of hydrogen. The intensity ratio of the 2D-band to the G-band, namely (intensity in 2D-band)/(intensity in G-band) is 1 or less, or alternatively, the intensity in the 2D-band and the intensity in the G-band are 0 in the Raman spectrum of the pellicle film.

Abstract: During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information specifying a defect associated with a location on a top surface of the reflective photo-mask, the modification to the reflective photo-mask is calculated. For example, the calculation may involve an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to calculate the modification at an object plane in the photo-lithographic process. Note that the modification includes a material added to the top surface of the reflective photo-mask using an additive fabrication process. Moreover, the modification is proximate to the location.

Abstract: A method for repairing a defect on a substrate surface includes placing on the defect a nanoparticle that includes a conductive material. A region of the substrate surface in which the nanoparticle is placed is irradiated, the region being larger than the nanoparticle. An energy density of the irradiation is below a modification threshold for the substrate surface.

Abstract: An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.

Abstract: Provided are a mask blank substrate which has effectively and extremely high principal surface flatness while a reduction in the manufacturing throughput of the mask blank substrate is suppressed, a mask blank, and a transfer mask. Also provided are manufacturing methods therefor. A virtual reference surface that becomes an optically effective flat reference surface defined by a Zernike polynomial which is composed of only terms in which the order of a variable related to a radius is the second or lower order, and includes one or more terms in which the order of the variable related to the radius is the second order is set, and a mask blank substrate satisfying the condition that data (PV value) relating to the difference between the maximum value and the minimum value of the difference data between the reference surface and the measured shape of the mask blank substrate is one-eighth or less of an exposure wavelength (A) is selected.

Abstract: A glass substrate for a mask blank has a rectangular planar shape. In four square regions each positioned at each corner of a first region (quality assurance region) and having one side of 8 mm, an angle between a least square plane in each the square region and that in the first region is 3.0 ?ad or less, and a PV value relative to the least square plane is 30 nm or less. In four strip regions each positioned in an area between one side of the first region and 8 mm inside the side and excluding the square regions, an angle between a least square plane in each the strip region and that in the first region is 1.5 ?ad or less, and a PV value relative to the least square plane is 15 nm or less.

Abstract: The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.

Abstract: Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.