Abstract: Methods, apparatuses, and systems related to coordinating a set of timing-critical operations across parallel processing pipelines are described. The coordination may include selectively using (1) circuitry associated with a corresponding pipeline to generate enable signals associated with the timing critical operations when a separation between the operations corresponds to a number of pipelines or (2) circuitry associated with a non-corresponding or another pipeline when the separation is not a factor of the number of pipelines.

Abstract: A semiconductor device includes a transmission and reception circuit and a control circuit. The transmission and reception circuit transmits and receives a signal to and from a semiconductor memory device. The control circuit acquires threshold voltage distribution information of a memory element connected to a word line for read disturb detection to which a second voltage higher than a first voltage applied to an adjacent word line adjacent to a read target word line during a read operation is applied and determines an influence of read disturb based on the threshold voltage distribution information.

Abstract: Various embodiments of high voltage generation circuits, high voltage operational amplifiers, adaptive high voltage supplies, adjustable high voltage incrementor, adjustable reference supplies, and reference circuits are disclosed. These circuits optionally can be used for programming a non-volatile memory cell in an analog neural memory to store one of many possible values.

Abstract: Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.

Abstract: Configurations of metal layers of interconnect structures are disclosed herein that can improve memory performance, such as static random-access memory (SRAM) memory performance, and/or logic performance. For example, embodiments herein place bit lines in a metal one (M1) layer, which is a lowest metallization level of an interconnect structure of a memory cell, to minimize bit line capacitance, and configure bit lines as the widest metal lines of the metal one layer to minimize bit line resistance. In some embodiments, the interconnect structure has a double word line structure to reduce word line resistance. In some embodiments, the interconnect structure has a double voltage line structure to reduce voltage line resistance. In some embodiments, jogs are added to a word line and/or a voltage line to reduce its respective resistance. In some embodiments, via shapes of the interconnect structure are configured to reduce resistance of the interconnect structure.

Abstract: Embodiments of the present disclosure provide an apparatus including a memory array including a plurality of sub-arrays. A plurality of temporary storage units (TSUs) is coupled to the plurality of sub-arrays. Each TSU indicates whether the respective sub-array is undergoing one of a read operation and a write operation. A control circuit is coupled to each of the plurality of sub-arrays through a data bus. The control circuit transmits a read pulse or a write pulse as a first pulse with a delay in response to the sub-array undergoing the read operation or the write operation and transmits, instantaneously, the first pulse to one of the plurality of sub-arrays in response to the sub-array not undergoing the read operation or the write operation.

Abstract: The present technology relates to an electronic device. A memory device that controls a voltage applied to each line to prevent or mitigate a channel negative boosting phenomenon during a sensing operation includes a memory block connected to a plurality of lines, a peripheral circuit configured to perform a sensing operation on selected memory cells connected to a selected word line among the plurality of lines, and control logic configured to control voltages applied to drain select lines, source select lines, and word lines between the drain select lines and the source select lines among the plurality of lines, during the sensing operation and an equalizing operation performed after the sensing operation. The control logic controls a voltage applied to an unselected drain select line according to whether a cell string is shared with a selected drain select line among the drain select lines, during the sensing operation.

Abstract: The systems and methods described herein involve a device that may receive a plurality of commands and generate a common command indicative of matching data signals between each of the plurality of commands. The device may include a first latch that receives a shifted flag and outputs a shifted command in response to a first enable signal. The device may include shifters, where a first shifter may receive the common command, and a last shifter may couple to the first latch. The last shifter may receive a shifter common command and may generate the first enable signal using the shifted common command.

Abstract: A page buffer includes a charging circuit, first and second storage circuits, and a selection circuit. The charging circuit charges a bit line during a precharging period. The first storage circuit determines and stores data corresponding to a state of a selected memory cell among memory cells connected to the bit line while the charging circuit charges the bit line. The second storage circuit, which is a circuit separate from the first storage circuit, determines and stores data corresponding to a state of the selected memory cell after the precharging period. The selection circuit outputs a control voltage controlling a switch element connected between the bit line and the charging circuit, and determines a magnitude of the control voltage during the precharging period, based on the data stored in the first storage circuit.

Abstract: A multi-level cell (MLC) one-selector-one-resistor (1S1R) three-dimensional (3D) cross-point memory system includes at least one MLC 1S1R structure including a stacked arrangement of a phase change memory (PCM) cell and a threshold switch selector. An electrically conductive bit line is in electrical communication with the OTS selector, and an electrically conductive word line is in electrical communication with the PCM cell. A controller is in electrical communication with the bit line and the word line. The controller is configured to select at least one voltage pulse from a group of different voltage pulses comprising a read pulse, a partial set pulse, a set pulse, a partial reset pulse, and a reset pulse, and configured to deliver the selected at least one voltage pulse to the at least one MLC 1S1R structure.

Abstract: A memory device includes a cell region in which memory blocks are disposed, each memory block including word lines stacked on a substrate, and channel structures penetrating through the word lines, and a peripheral circuit region including peripheral circuits executing an erase operation of deleting data for each of the memory blocks as a unit. The peripheral circuits control a voltage applied to each word line included in a target memory block to delete data in the erase operation, based on at least one of a position of the target memory block, a height of each word line included in the target memory block, and a profile of each channel structure.

Abstract: A memory device includes a well, a poly layer, a dielectric layer, an alignment layer and an active area. The poly layer is formed above the well. The dielectric layer is formed above the poly layer. The alignment layer is formed on the dielectric layer, used to receive an alignment layer voltage and substantially aligned with the dielectric layer in a projection direction. The active area is formed on the well. The dielectric layer is thicker than the alignment layer. A first overlap area of the poly layer and the active area is smaller than a second overlap area of the poly layer and the dielectric layer excluding the first overlap area.

Abstract: Methods and systems include memory devices having multiple memory cells configured to store data. The memory devices also include control circuitry including retry circuitry. The retry circuitry is configured to receive a read command having a target address. The retry circuitry is also configured to determine that the target address of the data stored in the memory cells is to be reused from a previous read operation. Additionally, the retry circuitry is configured to cause reading of the data from a sense amplifier latch from the previous read operation by reusing the target address. Specifically, reusing the target address includes bypassing rereading the data into the sense amplifier latch from the memory cells for a current read operation.

Abstract: A semiconductor device includes a cell area in which a plurality of memory cells are arranged in an array structure, and a peripheral area in which circuits configured to drive the memory cells are arranged, the peripheral area being next to the cell area. The cell area is divided into a plurality of banks, and the plurality of banks comprise first banks having a base size and second banks having a size of 1/(2*n) (wherein n is an integer greater than or equal to 1) of the base size. The plurality of banks are arranged in a first direction and a second direction perpendicular to the first direction, and the semiconductor device has a shape of a rectangular chip which is elongated in the second direction.

Abstract: A memory may include a first repair analysis circuit suitable for storing an input fail address when the input fail address is different from a fail address which is already stored in the first repair analysis circuit, and outputting the input fail address as a first transfer fail address when a storage capacity of the first repair analysis circuit is full; and a second repair analysis circuit suitable for storing the first transfer fail address when the first transfer fail address is different from a fail address which is already stored in the second repair analysis circuit.

Abstract: Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.

Abstract: The present disclosure provides techniques for using a multiple-port buffer to improve a transaction rate of a memory module. In an example, a memory module can include a circuit board having an external interface, first memory devices mounted to the circuit board, and a first multiple-port buffer circuit mounted to the circuit board. The first multiple-port buffer circuit can include a first port coupled to data lines of the external interface, the first port configured to operate at a first transaction rate, a second port coupled to data lines of a first plurality of the first memory devices, and a third port coupled to data lines of a second plurality of the first memory devices. The second and third ports can be configured to operate at a second transaction rate, wherein the second transaction rate is slower than the first transaction rate.

Abstract: A memory may include a first repair analysis circuit suitable for storing an input fail address when the input fail address is different from a fail address which is already stored in the first repair analysis circuit, and outputting the input fail address as a first transfer fail address when a storage capacity of the first repair analysis circuit is full; and a second repair analysis circuit suitable for storing the first transfer fail address when the first transfer fail address is different from a fail address which is already stored in the second repair analysis circuit.

Abstract: A memory device includes a plurality of data input/output (I/O) groups each including data I/O circuits, each data I/O circuit comprising a transistor having a predetermined threshold voltage according to a bulk voltage supplied to a bulk terminal thereof; a control circuit suitable for generating a control signal according to a data I/O mode; and a plurality of voltage supply circuits suitable for independently supplying bulk voltages to the plurality of data I/O groups, and changing, in response to the control signal, a level of a bulk voltage corresponding to data I/O groups unused in the data I/O mode, among the plurality of data I/O groups.

Abstract: A non-volatile memory device receives a read command and an address from a controller, and performs a data recovery read operation in response to the read command. In the data recovery read operation, an operation of obtaining aggressor group information from a memory cell connected to a word line adjacent to a word line selected according to the address, and an operation of recovering data corresponding to the obtained aggressor group information in a memory cell connected to the word line selected according to the address, are repeatedly performed on each of a plurality of aggressor groups.