Abstract: A semiconductor device is provided, which includes a memory chip and a temperature detection module. The temperature detection module is configured to detect a temperature of the memory chip. The temperature detection module includes a temperature detection unit. The temperature detection unit includes a temperature sensitive unit and an adjustable resistor unit. An electrical conductivity of the temperature sensitive unit changes with the change of temperature, and the adjustable resistor unit being connected in parallel with the temperature sensitive unit. The temperature detection unit is configured to be calibrated by adjusting a resistance value of the adjustable resistor unit.

Abstract: Numerous embodiments are disclosed for providing temperature compensation in an analog memory array. A method and related system are disclosed for compensating for temperature changes in an array of memory cells by measuring an operating temperature within the array of memory cells and changing a threshold voltage of a selected memory cell in the array of memory cells to compensate for a change in the operating temperature.

Abstract: Circuitry and methods of operating the same to strobe a DQ signal with a gated DQS signal are described. Some aspects are directed to a gating scheme to selectively pass a received strobe signal such as a DQS strobe signal based on a state of a drive enable (DE) signal in a drive circuit in the ATE, such that edges generated by the drive circuit are prevented from mistakenly strobing a received data signal such as a DQ signal.

Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include applying a positive first voltage level to a first node selectively connected to a string of series-connected memory cells while applying a negative second voltage level to a control gate of a transistor connected between the first node and the string of series-connected memory cells, and increasing the voltage level applied to the first node to a third voltage level while increasing the voltage level applied to the control gate of the transistor to a fourth voltage level lower than the third voltage level and higher than the first voltage level.

Abstract: In certain aspects, a memory device includes a first memory string including a first drain, a first drain select gate (DSG) transistor, first memory cells, and a first drain dummy transistor between the first drain and the first DSG transistor. The memory device also includes a first bit line coupled to the first drain, a first drain dummy line coupled to the first drain dummy transistor, a first DSG line coupled to the first DSG transistor, word lines respectively coupled to the first memory cells, and a peripheral circuit configured to perform a program operation on a target memory cell of the first memory cells coupled to a selected word line of the word lines.

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

Abstract: Methods, systems, and devices for method for setting a reference voltage for read operations are described. A memory device may perform a first read operation on a set of memory cells using a first reference voltage and detect a first codeword based on performing the first read operation using the first reference voltage. The memory device may compare a first quantity of bits of the first codeword having a first logic value (e.g., a logic value ‘1’) with an expected quantity of bits having the first logic value (e.g., the expected quantity of logic value ‘1’s stored by the set of memory cells). The memory device may determine whether to perform a second read operation on the set of memory cells using a second reference voltage different than the first reference voltage (e.g., greater or less than the first reference voltage) based on the comparing.

Abstract: Methods, systems, and devices for addressing scheme for a memory system are described. A memory system may include a plurality of memory devices that are coupled with various command address (CA) channels via respective pins. In some examples, different pins of each memory device may be coupled with different CA channels. When the memory system receives a command to enter a memory device into a per-device addressability (PDA) mode, certain CA channels may be driven. One or more memory devices may enter the PDA mode based on certain pins of the respective memory device being biased.

Abstract: A receiver that receives a multi-level signal includes a compensation circuit, a sampling circuit, an output circuit and a mode selector. The compensation circuit generates a plurality of data signals and a plurality of reference voltages by compensating intersymbol interference on an input data signal. The sampling circuit generates a plurality of sample signals based on the plurality of data signals and the plurality of reference voltages. The output circuit generates output data based on the plurality of sample signals, and selects a current value of the output data based on a previous value of the output data. The mode selector generates a mode selection signal used to select one of first and second operation modes based on an operating environment. The compensation circuit and the sampling circuit are entirely enabled in the first operation mode, and the compensation circuit and the sampling circuit are partially enabled in the second operation mode.

Abstract: A memory circuit includes a memory array and a control circuit. A first column of the memory array includes a select line, first and second bit lines, a first subset of memory cells coupled to the select line and the first bit line, and a second subset of memory cells coupled to the select line and the second bit line. The control circuit is configured to simultaneously activate each of the select line and the first bit line and, during a period in which the select line and first bit line are simultaneously activated, activate a first plurality of word lines, each word line of the first plurality of word lines being coupled to a memory cell of the first subset of memory cells.

Abstract: A system comprises an interposer including multiple conductive interconnects; multiple chiplets arranged on the interposer and interconnected by the interposer; each chiplet including a die-to-die physical layer interface including one or more pads to engage the interconnect of the interposer; and wherein at least one chiplet includes multiple input-output channels organized into at least one column and arranged in an order at a periphery of the chiplet forming a die-to-die physical layer interface to engage the interconnects of the interposer, wherein the order of the channels of the column is programmable.

Abstract: A module board and a memory module are provided. The module board includes a first branch line for connecting a clock signal terminal disposed on at least one surface to a first branch point; a first signal line for connecting the first branch point to a first module clock signal terminal; a second signal line for connecting the first module clock signal terminal to the kth module clock signal terminal and a first termination resistance terminal; a third signal line for connecting the first branch point to a (k+1)th module clock signal terminal; and a fourth signal line for connecting the (k+1)th module clock signal terminal to a 2kth module clock signal terminal and the second termination resistance terminal, wherein a length of the third signal line is greater than a sum of a length of the first signal line and a length of the second signal line.

Abstract: A memory device includes a memory array having a plurality of memory cells and a column decoder circuit that is configured to provide at least one column select signal for selecting corresponding bit-lines for memory operations on the plurality of memory cells. The memory device also includes a column select section that is configured to route the at least one column select signal such that non-adjacent bit-lines are exclusively selected during a same column select access memory operation.

Abstract: A latch circuit includes a plurality of latch sets, each including an enable latch and a plurality of address latches; and a plurality of latch-width adjusting circuits respectively corresponding to the latch sets, wherein, in each of the plurality of latch sets, the corresponding latch-width adjusting circuit is disposed between the enable latch of the corresponding latch set and the address latch adjacent to the enable latch, and couples the enable latch to the adjacent address latch depending on whether or not the corresponding latch set is used, at an end of a boot-up operation.

Abstract: A semiconductor device is provided, including a plurality of memory chips and a temperature detection module. The temperature detection module includes: a plurality of temperature detection units, in which the plurality of temperature detection units are disposed on at least part of the memory chips to detect the temperatures of at least part of the memory chips; and a processing unit, in which the plurality of temperature detection units share the processing unit with each other, and the processing unit is configured to process a signal of at least one of the temperature detection units.

Abstract: Methods, systems, and devices for fully associative cache management are described. A memory subsystem may receive an access command for storing a first data word in a storage component associated with an address space. The memory subsystem may include a fully associative cache for storing the data words associated with the storage component. The memory subsystem may determine an address within the cache to store the first data word. For example, the memory subsystem may determine an address of the cache indicated by an address pointer (e.g., based on the order of the addresses) and determine a quantity of accesses associated with the data word stored in that cache address. Based on the indicated cache address and the quantity of accesses, the memory subsystem may store the first data word in the indicated cache address or a second cache address sequential to the indicated cache address.

Abstract: A semiconductor memory device of embodiments includes: a memory cell array including a plurality of memory cells; and a control circuit controlling an operation of each of the memory cells and including a first capacitor. The first capacitor includes: a semiconductor substrate having a first face and a second face facing the first face and including a first semiconductor region of p-type, a second semiconductor region of n-type provided between the first face and the first semiconductor region, and a third semiconductor region of p-type provided between the first face and the second semiconductor region and electrically connected to the first semiconductor region; a first electrode electrically connected to the second semiconductor region; and a first insulating film provided between the third semiconductor region and the first electrode.

Abstract: Apparatuses and methods including memory cells, digit lines, and sense amplifiers are described. An example apparatus includes a pair of digit lines including first and second digit lines, a sense amplifier coupled to the pair of digit lines and configured to amplify a voltage difference between the first and second digit lines when activated, and a plurality of memory cells. A memory cell of the plurality of memory cells includes a first node coupled to the first digit line and includes a second node coupled to the second digit line. The memory cell of the plurality of memory cells is configured to store a respective voltage and/or charge at a respective cell node and couple the respective voltage and/or charge to the first node when activated.

Abstract: Testing circuitry and methods are disclosed for use with analog neural memory in deep learning artificial neural networks. The analog neural memory comprises one or more arrays of non-volatile memory cells. The testing circuitry and methods can be utilized during sort tests, qualification tests, and other tests to verify programming operations of one or more cells.

Abstract: This semiconductor device includes a memory semiconductor chip having a plurality of memory cells, a planar buffer chip which is a semiconductor chip that comprises a plurality of buffer circuits which hold data read from the memory cell and data written to the memory cell and which output the held data in accordance with the number of bit lines of the plurality of memory cells, an electrical connection structure which electrically connects the bit lines of the memory cells of the memory semiconductor chip and the buffer circuits of the planar buffer chip to each other in a thickness direction of the memory semiconductor chip and the planar buffer chip, and a plurality of bit wiring layers provided in accordance with the respective buffer circuits and electrically connected to the bit lines of the buffer circuits. The bit wiring layers are laminated on the planar buffer chip.