Abstract: An integrated circuit includes a substrate layer and a resistor bank in a polysilicon layer disposed on the substrate layer. The resistor bank includes a plurality of resistor elements having a body portion extending in a longitudinal direction. A metal line is disposed in a metal layer above the polysilicon layer to extend transverse to the longitudinal direction and across the body portion of a group of the plurality of resistor elements, thereby forming a first region of the resistor bank and a second region of the resistor bank. The first region is separated from the second region by the metal line. A resistor device having a predetermined resistance includes a subset of the resistor elements in the group electrically coupled together in the second region. The resistor device also includes first and second terminals located in the same first or second region of the resistor bank.

Abstract: Enhanced thermal energy transfer systems for semiconductor packages are provided. A thermally conductive member is disposed in the interstitial space between an upper surface of a semiconductor package and a lower surface of a thermal member. The thermally conductive member is disposed above a first portion of the upper surface of the semiconductor package having a relatively higher thermal energy output when the semiconductor package is operating. A thermal interface material is disposed in the interstitial space and a force applied to the thermal member. The thermally conductive member forms a relatively higher pressure region above the first portion of the semiconductor package and a relatively lower pressure region in other portions of the semiconductor package remote from the thermally conductive member. The increased pressure region proximate the thermally conductive member beneficially enhances the flow of thermal energy from the first portion of the semiconductor package to the thermal member.

Abstract: The present disclosure relates to a display structure, a display panel including the display structure, and a display device including the display panel and an image acquisition device. The display structure includes a plurality of pixels disposed in a first region of the display structure, wherein each pixel of the plurality of pixels includes a plurality of sub-pixels of N number of colors, and each sub-pixel of the plurality of sub-pixels includes an organic light emitting diode; and N number of driving circuits disposed in a second region of the display structure, wherein an ith driving circuit of the N number of driving circuits is configured to drive each sub-pixel of an ith color of the plurality of sub-pixels, wherein 1?i?N and N is an integer greater than 1.

Abstract: Methods and apparatus for fabricating memory devices are provided. In one aspect, an intermediate stack of dielectric layers are formed on a first stack of dielectric layers in a first tier. The intermediate stack of dielectric layers is then partially or fully etched and have a landing pad layer deposited thereon. In response to planarizing the landing pad layer to expose a top surface of the intermediate stack of dielectric layers, a second stack of dielectric layers are deposited above the planarized landing pad layer. A staircase is formed by etching through the second stack, the intermediate stack, and the first stack of dielectric layers in the staircase region of the memory device. The staircase is located adjacent to one end of the center landing pad, where steps of the staircase are formed within the thickness of the center landing pad.

Abstract: A semiconductor structure includes a first alternating stack of first insulating layers and first electrically conductive layers having first stepped surfaces and located over a substrate, a second alternating stack of second insulating layers and second electrically conductive layers having second stepped surfaces, and memory opening fill structures extending through the alternating stacks. A contact via assembly is provided, which includes a first conductive via structure vertically extending from a top surface of one of the first electrically conductive layers through a subset of layers within the second alternating stack and through the second retro-stepped dielectric material portion, an insulating spacer located within an opening through the subset of layers, and a second conductive via structure laterally surrounding the insulating spacer and contacting a second electrically conductive layer.

Abstract: A method for manufacturing a light emitting device includes: preparing a wavelength conversion member; preparing a light emitting element comprising a pair of electrodes at a second face side of the light emitting element; forming a light transmissive member, which includes: disposing a liquid resin material on a second main face of the wavelength conversion member, disposing the light emitting element on the liquid resin material such that (i) a first face of the light emitting element is opposed to the second main face of the wavelength converting member, (ii) a portion of a first lateral face of the light emitting element and a portion of a second lateral face of the light emitting element are covered by the liquid resin material, and (iii) a first corner of the light emitting element is exposed from the liquid resin material, and curing the liquid resin material; and forming a covering member.

Abstract: A semiconductor device includes a stack and a plurality of memory strings. The stack is formed on a substrate, and the stack includes conductive layers and insulating layers alternately stacked. The memory strings penetrate the stack along a first direction. Each of the memory strings includes a first conductive pillar, a second conductive pillar, a channel layer and a memory structure. The first conductive pillar and the second conductive pillar extend along the first direction, respectively, and electrically isolated to each other. The channel layer extends along the first direction. The channel layer is disposed between the first conductive pillar and the second conductive pillar, and the channel layer is coupled to the first conductive pillar and the second conductive pillar. The memory structure surrounds the first conductive pillar, the second conductive pillar and the channel layer.

Abstract: An electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nano-crystalline semiconductor material and at least one exciplex; an emission spectrum of the exciplex is at least partially overlapped with an excitation spectrum of the nano-crystalline semiconductor material; and the attenuation life of an excited state of the exciplex is longer than the attenuation life of an excited state of the nano-crystalline semiconductor material.

Abstract: A display device includes a substrate, a pixel, an encapsulation film, a sensing electrode, a pad, a connection wire, and an extension pattern. The substrate include a display area, a non-display area outside the display area, an additional area at a side of the non-display area, and a bending area defined in at least a portion of the additional area. The pixel is on the display area. The encapsulation film is on the pixel. The sensing electrode is on the encapsulation film. The pad is on the additional area. The connection wire is on the non-display area and is directly connected to the sensing electrode. The extension pattern directly connects the pad and the connection wire to each other. The extension pattern traverses the bending area.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

Abstract: An organic electroluminescence device includes a first electrode, a hole transport region disposed on the first electrode, a first emission layer disposed on the hole transport region and including a first light-emitting host and a first light-emitting dopant, a second emission layer disposed on the first emission layer and including a first electron transport material and a second light-emitting dopant, an electron transport region disposed on the second emission layer and including a second electron transport material, and a second electrode disposed on the electron transport region, wherein a triplet energy of the first light-emitting host (T1a), a triplet energy of the second light-emitting dopant (T1b) and a triplet energy of the second electron transport material (T1c) satisfy a relation of T1a<T1b<T1c. High emission efficiency may be shown.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to oxidized cavity structures within and under semiconductor devices and methods of manufacture. The structure includes: a substrate material; active devices over the substrate material; an oxidized trench structure extending into the substrate and surrounding the active devices; and one or more oxidized cavity structures extending from the oxidized trench structure and formed in the substrate material under the active devices.

Abstract: Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is ? or more the height of the translucent member in the direction perpendicular to the bottom surface.

Abstract: A three-dimensional memory device includes an alternating stack of word lines and at least one insulating layers or air gaps located over a substrate, a memory opening fill structure extending through the alternating stack. The memory opening fill structure includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The word lines are thicker than the insulating layers or air gaps.

Abstract: A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

Abstract: A semiconductor device includes a substrate; a first gate stack disposed on the substrate; a second gate stack disposed on the substrate, wherein a metal component of the first gate stack is different from a metal component of the second gate stack; and a dielectric structure disposed over the substrate and between the first gate stack and the second gate stack, in which the dielectric structure is separated from the first gate stack and the second gate stack, and a distance between the dielectric structure and the first gate stack is substantially equal to a distance between the dielectric structure and the second gate stack.

Abstract: A packaged power transistor device includes a Direct-Bonded Copper (“DBC”) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: The module structure includes a substrate, a passive element, metal columns and a chip. The passive element, the metal columns and the chip are located on a same side of the substrate. The passive element is located between the substrate and the film where the metal columns and the chip are located. The following applies: the vertical projection of the chip on the substrate overlaps a line segment or closed figure formed by endpoints constituted by the vertical projections of the metal columns on the substrate; the vertical projection of the passive element on the substrate overlaps the line segment or closed figure formed by the endpoints constituted by the vertical projections of the metal columns on the substrate; or the vertical projection of the passive element on the substrate overlaps the vertical projection of the chip on the substrate.

Abstract: Display panel, display device and detection compensation method of display panel are disclosed herein. In one embodiment, a display panel includes: display pixels arranged in M rows and N columns and provided in a display area, where both M and N are both positive integers; first power supply lines provided in the display area; and an integrated circuit, a switch circuit and a voltage stabilization transistor provided in a border area. One row of display pixels is electrically connected to one first power supply line. The first power supply lines are electrically connected to a first pin of the integrated circuit. A detection pin of the integrated circuit is electrically connected to the switch circuit. The voltage stabilization transistor includes: a control electrode electrically connected to the second pin, a first electrode electrically connected to the detection pin, and a second electrode electrically connected to one row of display pixels.