Abstract: A change in a read window of a group of memory cells of a memory device that has undergone a plurality of program/erase cycles (PECs) can be determined. read voltage can be determined based at least in part on the determined change in the read window.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: A clocked driver circuit can include a level shifter latch and a driver. The level shifter latch can be configured to receive an input signal upon a clock signal and generate a level shifted output signal. The driver can be configured to receive the level shifted output signal from the level shifter and drive the output signal on a line. The signal levels of the output signal can be greater than the signal level of the input signal.

Abstract: According to one embodiment, a semiconductor memory device includes: a first plane PL0 including a first memory cell array 57A, and a first latch circuit 60A configured to store first read data read from the first memory cell array 57A; a second plane PL1 including a second memory cell array 57B, and a second latch circuit 60B configured to store second read data read from the second memory cell array 57B; and an I/O circuit 11 including a first FIFO circuit 14A configured to fetch the first read data from the first latch circuit 60A, and a second FIFO circuit 14B configured to fetch the second read data from the second latch circuit 60B.

Abstract: Embodiments relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement a memory architecture that includes local bit lines for accessing subsets of memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes a cross-point memory array formed above a logic layer. The cross-point memory array includes X-lines and Y-lines, of which at least one Y-line includes groups of Y-line portions. Each of the Y-line portions can be arranged in parallel with other Y-line portions within a group of the Y-line portions. Also included are memory elements disposed between a subset of the X-lines and the group of the Y-line portions. In some embodiments, a decoder is configured to select a Y-line portion from the group of Y-line portions to access a subset of the memory elements.

Abstract: A memory system includes a memory device including a plurality of non-volatile memories and an interface circuit connected to each of the plurality of non-volatile memories, and a memory controller connected to the interface circuit and configured to transmit/receive data according to a first clock, wherein the interface circuit is configured to divide the first clock into a second clock, according to the number of the plurality of non-volatile memories, and transmit/receive data to/from each of the plurality of non-volatile memories, according to the second clock.

Abstract: Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.

Abstract: An electronic device includes a power supply circuit, a first counter that counts the number of times that supply of external power to the power supply circuit is stopped, a second counter that is operated by a first power and counts the number of times that generation of the plurality of kinds of power is stopped, a third counter counting the number of times that any of the plurality of kinds of power is dropped to a predetermined voltage or less, a non-volatile first memory storing status information indicating whether or not supply of the external power to the power supply circuit is properly stopped, and a fourth counter that counts the number of times that the supply of the external power to the power supply circuit is properly stopped and the number of times that the supply of the external power to the power supply circuit is abnormally stopped.

Abstract: The present disclosure describes analog memories for use in a computer, such as a computer using a combination of analog and digital components/elements used in a cohesive manner.

Abstract: A write assist circuit is provided. The write assist circuit includes a transistor switch coupled between a bit line voltage node of a cell array and a ground node. An invertor is operative to receive a boost signal responsive to a write enable signal. An output of the invertor is coupled to a gate of the transistor switch. The write assist circuit further includes a capacitor having a first end coupled to the bit line voltage node and a second end coupled to the gate node. The capacitor is operative to drive a bit line voltage of the bit line voltage node to a negative value from the ground voltage in response to the boost signal.

Abstract: A memory array includes strings that are configured to store keywords and inverse keywords corresponding to keys according to content addressable memory (CAM) storages schemes. A read circuit performs a CAM read operation over a plurality of iterations to determine which of the keywords are matching keywords that match a target keyword. During the iterations, a read controller biases word lines according to a plurality of modified word line bias setting that are each modified from an initial word line bias setting corresponding to the target keyword. At the end of the CAM read operation, the read controller detects which of the keywords are matching keywords, even if the strings are storing the keywords or inverse keywords with up a certain number of bit errors.

Abstract: A non-volatile memory combines a data cell and a reference cell. The data cell includes a coupling structure and a transistor stack. The transistor stack is electrically coupled to the coupling structure. The data cell can store data and output a data signal that corresponds to the data. The reference cell includes a transistor stack that has the same structure as that of the data cell and outputs a reference signal. A column circuit is electrically coupled to the data cell and the first reference cell and configured to process the data signal using the reference signal.

Abstract: A first memory section is disposed on a substrate. A second memory section is vertically stacked on the first memory section. The first memory section is provided between the substrate and the second memory section. The first memory section includes a flash memory cell structure, and the second memory section includes a variable resistance memory cell structure. The flash memory cell structure includes at least one cell string comprising a plurality of first memory cells connected in series to each other and a bit line on the substrate connected to the at least one cell string. The bit line is interposed vertically between the at least one cell string and the second memory section and connected to the second memory section.

Abstract: According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.

Abstract: A computer implemented method includes updating weight values associated with a plurality of analog synapses in a cross-bar array that implements an artificial neural network by sending a pulse sequence to the analog synapses. Each analog synapse includes a conductance unit, wherein a weight value of the analog synapse is based on a conductance value of the conductance unit. The pulse sequence changes the conductance value. The method further includes comparing the weight values of the analog synapses with target weight values associated with the analog synapses and selecting a set of analog synapses based on the comparison. The method further includes updating the weight values of the selected analog synapses by sending a set of electric pulses of varying durations.

Abstract: A test rack includes two or more memory device test boards where each memory device test boards includes two or more memory device test resources. Each of the two or more memory device test boards includes a separate processing device allocated to the memory device test resources of a corresponding memory device test boards. A processing device of a test board detects that a first memory sub-system has engaged with a first memory device test resource of the corresponding memory device test board. The processing device identifies a first test to be performed for a first memory device of the first memory sub-system, where the first test includes one or more first test instructions to be executed in performance of the first test. The processing device causes the one or more first test instructions to be transmitted to the first memory sub-system, where the first test is performed by the one or more first test instructions executing at the first memory sub-system.

Abstract: Memory might have a controller configured to program a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and program the second portion of memory cells in an order from the particular end to the different end. Memory might further have a controller configured to increment first and second read counts in response to performing a read operation on a memory cell of a block of memory cells, reset the first read count in response to performing an erase operation on a first portion of the block of memory cells, and reset the second read count in response to performing an erase operation on the second portion of the block of memory cells.

Abstract: A memory cell array with memory cells arranged in rows and columns, first sub source lines each connecting together the source regions in one of the rows and in a first plurality of the columns, second sub source lines each connecting together the source regions in one of the rows and in a second plurality of the columns, a first and second erase gate lines each connecting together all of the erase gates in the first and second plurality of the columns respectively, first select transistors each connected between one of first sub source lines and one of a plurality of source lines, second select transistors each connected between one of second sub source lines and one of the source lines, first select transistor line connected to gates of the first select transistors, and a second select transistor line connected to gates of the second select transistors.

Abstract: Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.

Abstract: A memory system includes a memory device including a plurality of non-volatile memories and an interface circuit connected to each of the plurality of non-volatile memories, and a memory controller connected to the interface circuit and configured to transmit/receive data according to a first clock, wherein the interface circuit is configured to divide the first clock into a second clock, according to the number of the plurality of non-volatile memories, and transmit/receive data to/from each of the plurality of non-volatile memories, according to the second clock.