Abstract: A method for determining a sense boundary of a sense amplifier includes: writing the same data into the memory cells controlled by at least a pair of first word line on the left side and second word line on the right side corresponding to the sense amplifier; activating the first word line and precharging bit lines corresponding to the first word line; reading the data in the memory cells controlled by the corresponding second word line after a preset row precharge time; and determining a corresponding critical row precharge time as a row precharge time boundary value when the sense amplifier does not correctly read the data in the memory cells controlled by the second word line.

Abstract: Disclosed are a weight memory device capable of supporting artificial neural network operation and a weight memory system using the same. A weight memory device according to an embodiment of the present invention includes: an input terminal; a common output terminal; and charge storage disposed between the input terminal and the common output terminal, and configured to store charge. In this case, the capacitance between the input terminal and the common output terminal is determined based on the amount of charge stored in the charge storage, and is quantified based on given data to be stored in the weight memory device.

Abstract: Interconnections for modular die designs are disclosed. In one aspect, a die that is a chiplet is designed and tested for suitability. After approval of the chiplet design, multiple dies or chiplets may be coupled together within a multi-die package to form a package having desired computing capabilities. After assembly, each chiplet is provided a unique identifier, such as by setting a fuse. Based on the unique identifier, each chiplet is made aware of how interfaces to other chiplets are configured so that signals may be routed appropriately. Using modular chiplets in this fashion reduces testing requirements and non-recurring expenses while increasing flexibility for design options.

Abstract: The memory device includes a memory block with an array of memory cells. The memory device also includes control circuitry that is in communication with the memory cells. The control circuitry is configured to program a group of the memory cells in a programming operation that does not include verify to obtain a natural threshold voltage (nVt) distribution, calculate an nVt width of the nVt distribution, compare the nVt width to a threshold, and identify the memory block as being vulnerable to cross-temperature read errors in response to the nVt width exceeding the threshold.

Abstract: A memory device with adaptive sense time tables is disclosed. In order to maintain a desired (initial or preset) threshold voltage distribution, the sense time is adjusted as the program-erase cycle count increases. The program-erase cycle process tends to wear down memory cells, causing the QPW window to expand and the threshold voltage to widen. However, by adjusting (i.e., reducing) the sense time for increased program-erase cycles, the QPW window and the threshold voltage can be at least substantially maintained. Additionally, systems and methods for adjusting sense time based on die-to-die variations are also disclosed.

Abstract: A device is provided. The device includes a physical unclonable function (PUF) cell array. The PUF cell array includes multiple bit cells, and generates a PUF response output, in response to a challenge input, based on a data state of one bit cell in the bit cells. Each of the bit cells stores a bit data and includes a transistor having a control terminal coupled to a word line and a first terminal coupled to a source line, a first memory cell having a first terminal coupled to a first data line and a second terminal coupled to a second terminal of the transistor, and a second memory cell having a first terminal coupled to a second data line, different from the first data line, and a second terminal coupled to the second terminal of the first memory cell at the second terminal of the transistor.

Abstract: Methods and apparatus for performing surface code computations using Auto-CCZ states. In one aspect, a method for implementing a delayed choice CZ operation on a first and second data qubit using a quantum computer includes: preparing a first and second routing qubit in a magic state; interacting the first data qubit with the first routing qubit and the second data qubit with the second routing qubit using a first and second CNOT operation, where the first and second data qubits act as controls for the CNOT operations; if a received first classical bit represents an off state: applying a first and second Hadamard gate to the first and second routing qubit; measuring the first and second routing qubit using Z basis measurements to obtain a second and third classical bit; and performing classically controlled fixup operations on the first and second data qubit using the second and third classical bits.

Abstract: A memory device includes a plurality of bit lines extending in a first direction and arranged in a second direction; and a cell region including a plane which is coupled to the plurality of bit lines, wherein the plane is divided into a plurality of memory groups each including a plurality of partial pages to be disposed in a plurality of rows in the first direction.

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, responsive to detecting a triggering event, selecting a family of memory blocks of the memory device, the selected family being associated with a set of bins, each bin associated with a plurality of read voltage offsets to be applied to base read voltages during read operations. The operations performed by the processing device further include calibration operations to determine data state metric values characterizing application of read voltage offsets of various bins. The operations performed by the processing device further include identifying, based on the determined data state metrics, a target bin and associating the selected family with the target bin.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a transistor, including a control terminal, a first terminal, and a second terminal; a first magnetic memory structure, a bottom electrode of which is electrically connected to the first terminal of the transistor; a second magnetic memory structure, a top electrode of which is electrically connected to the first terminal of the transistor, the bottom electrode of the first magnetic memory structure is located in a same layer with a bottom electrode of the second magnetic memory structure; a first bit line, electrically connected to a top electrode of the first magnetic memory structure; a second bit line, electrically connected to the bottom electrode of the second magnetic memory structure; and a selection line, electrically connected to a second terminal of the transistor.

Abstract: Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.

Abstract: A semiconductor memory device includes a memory cell array that includes memory cells arranged in rows and columns, a row decoder that is configured to receive a row address, decode the row address, and adjust voltages of selection lines based on the decoded row address, a word line driver that is connected with the selection lines, is connected with the rows of the memory cells through word lines, and is configured to adjust voltages of the word lines in response to an internal clock signal and the voltages of the selection lines, and a detection circuit that is connected with the word lines and is configured to activate a detection signal in response to voltages of the word lines being identical at a specific timing.

Abstract: An Input/Output (I/O) circuit for a memory device is provided. The I/O circuit includes a charge integration circuit coupled to a bitline of the memory device. The charge integration circuit provides a sensing voltage based on a decrease of a voltage on the bitline. A comparator is coupled to the charge integration circuit. The comparator compares the sensing voltage with a reference voltage and provides an output voltage based on the comparison. A time-to-digital converter coupled to the comparator. The time-to-digital convertor converts a time associated with the output voltage to a digital value.

Abstract: Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

Abstract: The disclosure generally provides for a method of solving a K-SAT problem. The method comprises programming one or more clauses of a Boolean expression for a K-SAT problem written in negated disjunctive normal form (DNF) to a ternary-CAM (TCAM) array comprising columns and rows of TCAM cells, applying an interpretation comprising one or more binary variables expected to solve the Boolean expression as an input along the columns to the TCAM array, returning a binary value for each clause and updating one or more variables within the interpretation if at least one clause is violated.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.

Abstract: A negative voltage switching device includes a first switching circuit configured to transmit a first negative voltage, a second switching circuit configured to transmit a second negative voltage, and a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal.

Abstract: A method for reducing noise in a read signal due attributable to read element asymmetry provides for transmitting a write signal through a write precompensation circuit that shifts rising edges and falling edges of each of pulse in the write signal by a select magnitude and in opposite directions. After the write signal is encoded on a media, a corresponding read signal is read, with a read element, from the media. The method further provides for transmitting the read signal through a magnetoresistive asymmetry compensation (MRAC) block that is tuned to correct second-order non-linearities characterized by a particular set of distortion signatures. The select magnitude of the waveform shift applied by the write precompensation circuit introduces a non-linear signal characteristic that combines with non-linear signal characteristics introduced by the read element to generate one of the particular distortion signatures that is correctable by the MRAC block.

Abstract: Memory devices and systems with partial array refresh control over memory regions in a memory array, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a first memory region and a second memory region. The memory device is configured to write data to the memory array in accordance with a programming sequence by initially writing data to unutilized memory cells of the first memory region before initially writing data to unutilized memory cells of the second memory region. The memory device is further configured to determine that the data stored on the first and/or second memory regions is not consolidated, and to consolidate at least a portion of the data by rewriting the portion of the data to physically or logically contiguous memory cells of the first memory region and/or the second memory region.

Abstract: The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a memory array including a plurality of memory cells, each memory cell having an impedance that varies in accordance with a respective data value stored therein; and a tracking memory cell having an impedance based on a tracking data value stored therein; and a read circuit coupled to the memory array, the read circuit configured to determine an impedance of a selected memory cells with respect to the impedance of the tracking memory cell; read a data value stored within the selected memory cell based upon a voltage change of a signal node voltage corresponding to the impedance of the selected memory cell.