Patents by Inventor Akira Okada
Akira Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150091599Abstract: A semiconductor testing jig is provided with a conductive stage including a plurality of mounting portions on which a plurality of vertical semiconductor devices are each individually disposed with lower surface electrodes being in contact with the plurality of mounting portions, an insulating frame portion having a lattice pattern that is disposed on the stage and surrounds each of the plurality of mounting portions in plan view to define each of the mounting portions, and an abrasive layer disposed in a position in the frame portion, the position facing each of the vertical semiconductor devices disposed on the mounting portions.Type: ApplicationFiled: June 27, 2014Publication date: April 2, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Akira OKADA, Takaya NOGUCHI, Norihiro TAKESAKO, Kinya YAMASHITA, Hajime AKIYAMA
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Patent number: 8991345Abstract: A main lock member is fitted in a main lock bore at a main lock phase for closing an intake valve at a timing later than a timing when a piston reaches a bottom dead center, whereby a rotation phase is locked. In a subordinate lock mechanism, the rotation phase is locked at a subordinate lock phase advancing further than the main lock phase. In a lock control mechanism, a temperature sensing body is changed to an expanded state, whereby a moving member is latched at a first position in which the main lock member is allowed to be fitted in the main lock bore, whereas at a main lock phase in a cold stop state after a timing when the temperature of the stopped internal combustion engine becomes less than a preset temperature, the temperature sensing body is changed to a contracted state.Type: GrantFiled: October 10, 2013Date of Patent: March 31, 2015Assignee: Denso CorporationInventors: Yuusuke Yasuki, Shuhei Oe, Makoto Otsubo, Taketsugu Sasaki, Kuniaki Oka, Akira Okada, Takehiro Tanaka
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Patent number: 8981805Abstract: An inspection apparatus includes an insulating substrate, a probe pin having a body portion secured to the insulating substrate, a tip portion connected to one end of the body portion and disposed on the back surface side of the insulating substrate, and a connection portion connected to the other end of the body portion and disposed on the front surface side of the insulating substrate, and a heat-radiating terminal in contact with the connection portion, wherein a current is applied through the heat-radiating terminal and the probe pin to an object to measured, and wherein the heat-radiating terminal discharges heat from the probe pin.Type: GrantFiled: March 1, 2013Date of Patent: March 17, 2015Assignee: Mitsubishi Electric CorporationInventors: Akira Okada, Hajime Akiyama, Kinya Yamashita
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Patent number: 8980655Abstract: A test apparatus includes a foreign matter removal unit having a first slope provided with an abrasive coating or an adhesive sheet and a second slope provided with an abrasive coating or an adhesive sheet, the second slope facing the first slope in such a manner that an upper end of the second slope is spaced from an upper end of the first slope a greater distance than a lower end of the second slope is spaced from a lower end of the first slope, a test unit for testing electrical characteristics of a semiconductor chip, and a transfer unit for holding and releasing the semiconductor chip at a position above the first and second slopes and transferring the semiconductor chip to the test unit.Type: GrantFiled: April 18, 2014Date of Patent: March 17, 2015Assignee: Mitsubishi Electric CorporationInventors: Akira Okada, Takaya Noguchi, Norihiro Takesako, Kinya Yamashita, Hajime Akiyama
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Patent number: 8975681Abstract: In one surface of a semiconductor substrate, an active region in which main current flows and an IGBT is disposed is formed. A termination structure portion serving as an electric-field reduction region is formed laterally with respect to the active region. In the termination structure portion, a porous-oxide-film region, a p-type guard ring region, and an n+-type channel stopper region are formed. A plurality of floating electrodes are formed to contact the surface of the porous-oxide-film region. Another plurality of floating electrodes are formed to contact a first insulating film.Type: GrantFiled: May 31, 2013Date of Patent: March 10, 2015Assignee: Mitsubishi Electric CorporationInventors: Hajime Akiyama, Akira Okada
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Publication number: 20150044788Abstract: A test apparatus includes a foreign matter removal unit having a first slope provided with an abrasive coating or an adhesive sheet and a second slope provided with an abrasive coating or an adhesive sheet, the second slope facing the first slope in such a manner that an upper end of the second slope is spaced from an upper end of the first slope a greater distance than a lower end of the second slope is spaced from a lower end of the first slope, a test unit for testing electrical characteristics of a semiconductor chip, and a transfer unit for holding and releasing the semiconductor chip at a position above the first and second slopes and transferring the semiconductor chip to the test unit.Type: ApplicationFiled: April 18, 2014Publication date: February 12, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Akira OKADA, Takaya NOGUCHI, Norihiro TAKESAKO, Kinya YAMASHITA, Hajime AKIYAMA
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Publication number: 20140347081Abstract: A semiconductor device assessment apparatus that electrically assesses a semiconductor device formed on a semiconductor substrate includes a holding unit having a surface to hold the semiconductor substrate thereon, and a detection unit to detect irregularity on the surface of the holding unit. The holding unit on the surface includes a plurality of grooves formed such that when the semiconductor substrate is held on the surface, the grooves overlap a periphery of the semiconductor substrate and also have a portion located outer than the periphery of the semiconductor substrate.Type: ApplicationFiled: February 24, 2014Publication date: November 27, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime AKIYAMA, Akira OKADA, Kinya YAMASHITA
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Publication number: 20140346514Abstract: A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current.Type: ApplicationFiled: June 16, 2014Publication date: November 27, 2014Applicant: Mitsubishi Electric CorporationInventors: Hajime Akiyama, Akira Okada
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Publication number: 20140342544Abstract: A semiconductor wafer is subjected to a protection film formation step process as a process before evaluation of electrical characteristics. In this process, after an insulating film serving as a protection film is formed, a photolithography process and an etching process are performed so as to form a protection film having a plurality of openings exposing an emitter electrode. Then, electrical characteristics are evaluated by bringing a contact probe in contact with the exposed emitter electrode through each opening.Type: ApplicationFiled: February 24, 2014Publication date: November 20, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime AKIYAMA, Akira OKADA, Kinya YAMASHITA
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Patent number: 8823360Abstract: A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current.Type: GrantFiled: August 19, 2011Date of Patent: September 2, 2014Assignee: Mitsubishi Electric CorporationInventors: Hajime Akiyama, Akira Okada
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Publication number: 20140242288Abstract: Provided are a reducing electroless silver plating solution and a reducing electroless silver plating method using the silver plating solution, the reducing electroless silver plating solution being capable of preventing decomposition of silver in the plating solution thereby to maintain stability of the solution and also being capable of preventing excessive roughening of an underlying metal or the like thereby to form a plating film having good film characteristics and a good appearance. The reducing electroless silver plating solution according to the present invention comprises a water-soluble silver salt and a reducing agent, wherein cyanide ions in a concentration of 0.006×10?3 mol/L to 12.5×10?3 mol/L are contained.Type: ApplicationFiled: October 9, 2012Publication date: August 28, 2014Applicant: C. UYEMURA & CO., LTDInventors: Daisuke Hashimoto, Kota Kitajima, Akira Okada
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Publication number: 20140210500Abstract: A semiconductor evaluating device includes a chuck stage for holding a semiconductor device serving as a measuring object, a contact probe for evaluating an electrical characteristic of the semiconductor device by getting contact with the semiconductor device held on the chuck stage, and a fluid spraying portion for spraying a fluid onto the semiconductor device.Type: ApplicationFiled: October 28, 2013Publication date: July 31, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime AKIYAMA, Akira OKADA, Kinya YAMASHITA
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Publication number: 20140199823Abstract: An SOT substrate (6), in which a silicon layer (5) is provided on a silicon substrate (3) via a silicon oxide film (4), is formed. Next, a plurality of semiconductor elements (8) is formed on a surface of the silicon layer (5). Next, wiring (11) is formed on a surface of an insulating substrate (10). Next, the SOI substrate (6) and the insulating substrate (10) are pasted together so that the plurality of semiconductor elements (8) and the wiring (11) are electrically connected together. Next, at least one of hydrogen ions and rare gas ions are injected into the silicon substrate (3) to form a brittle layer (12). Next, part of the silicon substrate (3) is peeled away from the brittle layer (12) as a boundary.Type: ApplicationFiled: June 10, 2011Publication date: July 17, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Noritsugu Nomura, Akira Okada, Tatsuo Harada
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Publication number: 20140096731Abstract: A main lock member is fitted in a main lock bore at a main lock phase for closing an intake valve at a timing later than a timing when a piston reaches a bottom dead center, whereby a rotation phase is locked. In a subordinate lock mechanism, the rotation phase is locked at a subordinate lock phase advancing further than the main lock phase. In a lock control mechanism, a temperature sensing body is changed to an expanded state, whereby a moving member is latched at a first position in which the main lock member is allowed to be fitted in the main lock bore, whereas at a main lock phase in a cold stop state after a timing when the temperature of the stopped internal combustion engine becomes less than a preset temperature, the temperature sensing body is changed to a contracted state.Type: ApplicationFiled: October 10, 2013Publication date: April 10, 2014Applicant: DENSO CORPORATIONInventors: Yuusuke YASUKI, Shuhei OE, Makoto OTSUBO, Taketsugu SASAKI, Kuniaki OKA, Akira OKADA, Takehiro TANAKA
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Publication number: 20140077284Abstract: In one surface of a semiconductor substrate, an active region in which main current flows and an IGBT is disposed is formed. A termination structure portion serving as an electric-field reduction region is formed laterally with respect to the active region. In the termination structure portion, a porous-oxide-film region, a p-type guard ring region, and an n+-type channel stopper region are formed. A plurality of floating electrodes are formed to contact the surface of the porous-oxide-film region. Another plurality of floating electrodes are formed to contact a first insulating film.Type: ApplicationFiled: May 31, 2013Publication date: March 20, 2014Inventors: Hajime AKIYAMA, Akira OKADA
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Publication number: 20140015554Abstract: An inspection apparatus includes an insulating substrate, a socket in which a body portion having a through-hole in a wall thereof is integrally formed with a connection portion secured to the insulating substrate, and a contact probe detachably secured to the socket.Type: ApplicationFiled: March 4, 2013Publication date: January 16, 2014Applicant: Mitsubishi Electric CorporationInventors: Akira OKADA, Hajime AKIYAMA, Kinya YAMASHITA
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Publication number: 20140009183Abstract: A semiconductor testing jig fixes a measurement target while it is held between a chuck stage and the measurement target. The semiconductor testing jig includes a base on which the measurement target is to be installed and which can be attached to the chuck stage. The base includes: a first main surface to become an installation surface for the measurement target; a second main surface opposite the first main surface and which is to contact the chuck stage; and a porous region containing a porous member. The porous region is provided selectively as seen in plan view, and penetrates through the base from the first main surface toward the second main surface.Type: ApplicationFiled: March 14, 2013Publication date: January 9, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime AKIYAMA, Akira OKADA, Kinya YAMASHITA
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Publication number: 20130321015Abstract: An inspection apparatus includes an insulating substrate, a probe pin having a body portion secured to the insulating substrate, a tip portion connected to one end of the body portion and disposed on the back surface side of the insulating substrate, and a connection portion connected to the other end of the body portion and disposed on the front surface side of the insulating substrate, and a heat-radiating terminal in contact with the connection portion, wherein a current is applied through the heat-radiating terminal and the probe pin to an object to measured, and wherein the heat-radiating terminal discharges heat from the probe pin.Type: ApplicationFiled: March 1, 2013Publication date: December 5, 2013Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Akira OKADA, Hajime AKIYAMA, Kinya YAMASHITA
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Publication number: 20130321019Abstract: It is an object of the present invention to provide a probe card capable of controlling generation of a scratch or an indentation in a connection pad and capable of controlling generation of heat in a connection pad and its vicinity having contacted a contact probe at low cost and in a simple way. A probe card includes a probe substrate, at least one contact probe electrically connected to a signal line provided to an insulating base of the probe substrate and fixed to the insulating base, and at least one engagement member installed on the contact probe at a position near a tip end portion of the contact probe. The engagement member has at least one engagement portion that makes abutting contact with another predetermined member during operation to restrain the operation of the contact probe.Type: ApplicationFiled: March 1, 2013Publication date: December 5, 2013Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Akira OKADA, Hajime AKIYAMA, Kinya YAMASHITA
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Publication number: 20130284983Abstract: The present invention provides a mechanism capable of decreasing wires which are not appropriately supplied with power and performing the electrical discharge machining high in uniformity between multiple wires. A wire electrical discharge machining system configured to slice a workpiece at an interval of wires arranged side by side at equally spaced intervals causes the wire to travel in the same direction and includes a power feed contact configured to collectively supply a machining power supply to a plurality of the traveling wires, in which two adjacent power feed contacts respectively come into contact with the plurality of the wires supplied with the machining power supply and arranged without being aligned in the direction vertical to the direction in which the wire travels.Type: ApplicationFiled: April 22, 2013Publication date: October 31, 2013Applicant: Canon Marketing Japan Kabushiki KaishaInventors: Yasuhiro Okamoto, Akira Okada, Haruya Kurihara