Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: Substrate carrier having multiple emissivity coefficients for thin film processing and more particularly for support of a substrate during a deposition process epitaxially growing a film on the substrate. A front side of the carrier has a first carrier surface upon which the substrate is to be disposed, the first carrier surface having a first emissivity coefficient different than a second emissivity coefficient of a second carrier surface adjacent to the first carrier surface. Selection of the second emissivity coefficient independent of the first emissivity coefficient may modify an amount of energy radiated from the second carrier surface during processing of the substrate. In one embodiment, the second carrier surface has a second emissivity coefficient which is lower than the first emissivity coefficient to reduce heat loss from the carrier surface while maintaining high efficiency energy transfer between the carrier and a substrate.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

Abstract: A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

Abstract: A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A polishing pad include a polishing layer having a polishing surface and a backing layer on a side of the polishing layer opposite the polishing surface. An outer edge of the polishing layer overhangs an outer edge of the backing layer.