Abstract: Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

Abstract: A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.

Abstract: Compositions and processes for producing compositions for removing conductive material, such as copper or copper alloys, from a substrate with reduced dishing and reduced insensitivity to overpolishing are provided. Embodiments include polishing compositions for electrochemical mechanical polishing of a substrate surface comprising a conductive material, the compositions having a pH of between about 3.0 to about 9.0, such as between about 4.0 to about 7.0, for example between about 5.0 to about 6.5. The polishing compositions comprise one or more inorganic based electrolytes, such as potassium phosphate monobasic, one or more chelating agents, such as citric acid, imidodiacetic acid, glycine, or salts thereof, such as ammonium citrate, one or more corrosion inhibitors, such as benzotriazole, a basic pH adjusting agent, such as ammonium hydroxide, potassium hydroxide or combinations thereof, one or more oxidizers, such as hydrogen peroxide or ammonium persulphate (APS), and a solvent, such as deionized water.

Abstract: A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.

Abstract: The present invention relates to an apparatus and a method for polishing a semiconductor substrate with high throughput. One embodiment of the present invention provides an apparatus for electro-chemical mechanical polishing a conductive surface on a substrate. The apparatus comprises a fluid basin having a fluid volume for retaining a polishing solution, a linear polishing station disposed in the fluid basin, wherein the linear polishing station having at least one electrode and a conductive top surface with a linear movement, the conductive top surface is configured to provide an electrical bias to the conductive surface on the substrate, and a carrier head configured to retain the substrate and position the conductive surface of the substrate to be in contact with the conductive top surface of the linear polishing station.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface by a plurality of apertures to provide an electrolyte pathway between the upper surface of the electrode and the working surface of the pad assembly.

Abstract: A method and apparatus for removing conductive material from a substrate surface are provided. In one embodiment, a method is provided for electrochemical mechanical polishing of a substrate. A substrate comprising dielectric feature definitions, a barrier material disposed on the feature definitions, and a bulk conductive material in an amount sufficient to fill the feature definitions is provided. The substrate is exposed to an electrolyte solution. A passivation layer is formed on the conductive material. The passivation strength of the passivation layer is increased by polishing the substrate with a first voltage for a first time period. The substrate is polished with a second voltage higher than the first voltage for a second time period. Conductive material is removed from at least a portion of the substrate surface by anodic dissolution.

Abstract: Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.

Abstract: A method for controlling the removal rate of material from a substrate during a polishing process is described. In one embodiment, the pre-polish profile of the substrate is determined and polishing pad conditioning parameters are adjusted based on that profile. Parameters such as conditioning head sweep range and frequency, and conditioning element downforce and RPM may be adjusted to selectively condition portions of the pad to maintain optimum polishing qualities of the pad.

Abstract: A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The conductive portion is electrically biased during polishing to reduce the edge effect that tends to occur with conventional electrochemical mechanical processing systems.

Abstract: A method and apparatus are provided for electroprocessing with recessed bias contact. In one embodiment, the apparatus includes a platen, a processing pad disposed on the platen and having at least a first aperture and a second aperture formed therethrough, a first electrode positioned under the processing pad and exposed to a polishing surface of the processing pad through the first aperture, wherein an upper surface of the first electrode is recessed from the polishing surface; a plurality of second electrodes exposed to the polishing surface through the second aperture, wherein upper surfaces of the second electrodes are recessed from the polishing surface, and an electrical circuit coupled to the first and second electrodes and configured to bias each of the second electrodes independently relative to the first electrode.

Abstract: A composition for rinsing a substrate including deionized water, one or more carboxylate acid containing compounds, one or more surfactants, and one or more corrosion inhibitors and a method of using the same is provided. Also a method for rinsing a substrate between exposure to platens including moving the substrate from a first platen to a second platen and exposing the substrate to a rinse solution comprising one or more carboxylate acid containing compounds, one or more surfactants, and one or more corrosion inhibitors.

Abstract: Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

Abstract: Embodiments of the invention generally provide a method for electrochemically removing material from a substrate. In one embodiment, a method for electrochemically processing a substrate includes determining a process target for a substrate; electrochemically processing the substrate; determining a deviation between expected and actual process indicators while processing, and changing at least one process variable during processing in response to the variation.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

Abstract: An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing system that reduces the number of defects found on the substrate surface after polishing. An exemplary electrochemical apparatus includes a physical barrier that prevents any trapped gas or gas generated during processing from residing in areas that can cause defects on the substrate. The process can be aided by the addition of various chemical components to the electrolyte that tend to reduce the gas generation at the cathode surface during the ECMP anodic dissolution process.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface by a plurality of apertures to provide an electrolyte pathway between the upper surface of the electrode and the working surface of the pad assembly.