Abstract: Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

Abstract: A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

Abstract: Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

Abstract: Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is determined for each bias when the amount of charge removed for a bias substantially equals a respective target charge calculated for the bias.

Abstract: A retaining ring for electrochemical mechanical processing is described. The ring has a conductive portion having an upper surface and a lower surface and an insulating portion. The insulating portion has one or more openings extending therethrough, exposing the lower surface of the conductive portion. An upper surface of the insulating portion contacts the lower surface of the conductive portion. In an electrochemical mechanical polishing process, the retaining ring can be biased separately from a substrate being polished.

Abstract: A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.

Abstract: A conductive polishing article is provided. The conductive polishing article at least has a polishing pad, cathodes and anodes. Cathodes and anodes are disposed below the polishing surface of the polishing pad, and an ion exchange membrane at least partially covers the anodes.

Abstract: A method for processing a substrate having a conductive layer disposed thereon is provided. The substrate is coupled with a planarizing head. The planarizing head is moved to a position above a polishing pad assembly. The planarizing pad is positioned relative to the polishing pad assembly without applying a voltage to the substrate. A first voltage is applied to the substrate for a first time period. A second voltage is applied to the substrate for a second time period in order to remove a portion of the conductive layer, wherein the second voltage is greater than the first voltage. In certain embodiments, applying a first voltage to the substrate further comprises forming a uniform passivation layer on the conductive layer.

Abstract: A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using a power ring configured to electro polish an edge of the substrate are provided. The electro polishing of the substrate edge may occur simultaneously with the electrochemical mechanical processing of a substrate face. In certain embodiments a method of electrochemically polishing a substrate having a conductive material disposed thereon is provided. A substrate is coupled with a carrier head comprising a power ring which surrounds an edge of the substrate, wherein the edge of the substrate includes the conductive material. A polishing pad is contacted with a face of the substrate. A first voltage is applied to the power ring to remove conductive material from the edge of the substrate. A second voltage different from the first voltage is applied to the polishing pad to remove a portion of the conductive material from the face of the substrate.

Abstract: A method and apparatus for processing barrier and metals disposed on a substrate in an electrochemical mechanical planarizing system are provided. In certain embodiments a method for electroprocessing a substrate is provided. The method comprises contacting the substrate with the non-conductive surface of a polishing pad assembly, establishing a first electrically conductive path through an electrolyte between an exposed layer of barrier material and a first electrode, establishing a second electrically conductive path through the electrolyte between the exposed layer of barrier material and a second electrode, applying a voltage to the first electrode to cause a voltage drop between the substrate and the second electrode, and removing the barrier material from the substrate.

Abstract: Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.

Abstract: A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.

Abstract: Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.

Abstract: An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Abstract: Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

Abstract: Embodiments of the present invention provide an apparatus for electrochemically processing a substrate. The apparatus comprises a processing layer having a surface adapted for processing a substrate thereon, a polishing head for retaining a substrate against the processing surface, a retaining ring a terminal adapted for coupling to a power source, and a plurality of independently biasable electrodes disposed below the processing layer.

Abstract: Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

Abstract: A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The conductive portion is electrically biased during polishing to reduce the edge effect that tends to occur with conventional electrochemical mechanical processing systems.