Abstract: The present invention relates to an image collection sensor device, an unmanned counting edge computing system and method using the same, and more particularly, to an image collection sensor device capable of providing a high-precision unmanned counting service using a low-power wireless image collection sensor device operated by a battery by analyzing unmanned counting result data that counts the number of persons included in image data, determining image sensor parameters of the image data, and adjusting a collection cycle and collection image quality of image sensor data according to environmental changes in a sensing area.

Abstract: An electronic device is provided having an antenna that also functions as a display shield for a display of the device. The display shield can separate components for a display module from other electrical components of the electronic device. The display shield can be grounded to an enclosure of the device at least partially by one or more shield grounding clips, and configured to receive and/or transmit radio frequency waves.

Abstract: A flat flame-retardant harness system includes: a conductor including a plurality of connection contacts, a first position provided with a connector and a second position provided with a temperature sensor, and a wiring pattern for electrically connecting the plurality of connection contacts and the second position to the first position; a lower non-combustible layer provided to contact a lower portion of the conductor, having a plurality of first bus bar coupling portions having first holes formed at positions corresponding to the plurality of connection contacts, and including a flame-retardant material; and an upper non-combustible layer provided to contact the upper portion of the conductor, having a plurality of second bus bar coupling portions having second holes formed at positions corresponding to the plurality of connection contacts, and including a flame-retardant material, wherein each connection contact contacts a bus bar by a first means, and thus is electrically connected.

Abstract: The present disclosure generally relates to underwater user interfaces.

Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.

Abstract: A method including the step contacting an olefin, an alcohol, a metallosilicate catalyst and a solvent, wherein the solvent comprises structure (I): wherein R1 and R2 are each selected from the group consisting of an aryl group and an alkyl group with the proviso that at least one of R1 and R2 is an aryl group, further wherein n is 1-3.

Abstract: A system is configured for reconfiguration of a Synchronization Signal Block (SSB) pattern. The system is configured for obtaining data including a configuration for a Synchronization Signal Block (SSB) transmission carrying a physical broadcast channel (PBCH), the configuration specifying, for an SSB of the configuration, resource elements (REs) allocated for transmitting a primary synchronization signal (PSS) to a user equipment (UE) and REs allocated for transmitting a secondary synchronization signal (SSS) to the UE. The system is configured for selecting a set of REs that are unused in the configuration for the SSB transmission, specifying a filling sequence for extending a synchronization signal or an SSB to the set of REs that are unused in the configuration of the SSB transmission, generating data including an enhanced configuration for the SSB transmission that includes the extended synchronization signal or the extended SSBs, and transmitting the SSB transmission using the enhanced configuration.

Abstract: A system is configured for reconfiguration of a Synchronization Signal Block (SSB) pattern. The system is configured for obtaining data including a configuration for a Synchronization Signal Block (SSB) transmission carrying a physical broadcast channel (PBCH), the configuration specifying, for an SSB of the configuration, resource elements (REs) allocated for transmitting a primary synchronization signal (PSS) to a user equipment (UE) and REs allocated for transmitting a secondary synchronization signal (SSS) to the UE. The system is configured for selecting a set of REs that are unused in the configuration for the SSB transmission, specifying a filling sequence for extending a synchronization signal or an SSB to the set of REs that are unused in the configuration of the SSB transmission, generating data including an enhanced configuration for the SSB transmission that includes the extended synchronization signal or the extended SSBs, and transmitting the SSB transmission using the enhanced configuration.

Abstract: A method of forming a semiconductor memory device includes simultaneously filling a top portion of a first high aspect ratio (HAR) structure and a top portion a second HAR structure with a silicon-containing sacrificial layer by a cycle of a deposition process and an etch process, wherein the first HAR structure has a critical dimension (CD) of between 150 nm and 250 nm, and the second HAR structure has a CD of between 250 nm and 400 nm.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A semiconductor device and method of manufacturing that includes a first etch stop layer and a second etch stop layer to prevent delamination and damage to underlying components. A first passivation layer and a second passivation layer are disposed on a substrate, with a metal pad exposed through the passivation layers and contacting a top metal component of the substrate. The first etch stop layer is then formed on the second passivation layer and the metal pad. A third passivation layer is then formed on the substrate with an opening to the metal pad, which is covered by the first etch stop layer. The second etch stop layer is then formed on the third passivation layer and in the opening on the second etch stop layer. A bottom metal film/conductive component is then formed on the second etch stop layer, photoresist is applied, and wet etching is performed. The metal pad is protected from damage caused by delamination of the second etch stop layer by the first etch stop layer.

Abstract: A semiconductor cleaning tool is provided. The cleaning tool comprises a nozzle. The nozzle is connected with a first inlet to receive a carrier gas and a second inlet to receive one or more fluids. The nozzle comprises a gas passageway connected to the first inlet; and fluid passageway connected to the second inlet. The gas passageway comprises gas passage branches and the fluid passageway comprises fluid passage branches. The gas passage branches and the fluid passage branches are arranged interweavingly in the nozzle. Individual gas/fluid passage branches are controllable indecently and separately including a flow rate, a temperature, an on/off state, a type of fluid(s) or carrier gas, a time period, a supply mode, and/or any other aspects of spraying the fluid(s) and carrier gas through the individual gas passage branches and the individual fluid passage branches.

Abstract: Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed. Grooves are formed across a width of the fin(s) to increase the overlapping surface area with the gate terminal, in particular with a length of the groove being less than or equal to the fin width. Methods of forming such grooved fins and semiconductor capacitor devices are also described.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Abstract: A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.