Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: A wearable device comprises a main body and at least one belt. The main body comprises a casing, and the casing comprises at least one first engaging member and at least one first positioning member. The at least one belt comprises a connecting portion and an adapter. The adapter is connected to the connection portion of the at least one belt, and comprises at least one second engaging member and at least one second positioning member. The at least one first positioning member is connected to the at least one second positioning member correspondingly for positioning the belt on the main body. The at least one first engaging member is engaged with the at least one second engaging member correspondingly, so that the belt is fixed to the main body. Consequently, the main body and the belt connect to each other firmly and are easy to be assembled and disassembled.

Abstract: An electronic device includes a display, a payment module transmitting data associated with a payment transaction to an external device wirelessly, a processor electrically connected to the display and the payment module, and a memory electrically connected to the processor. The memory stores instructions that cause the processor to initiate transmission of payment data to the external device, in response to a predetermined event and to output an optically recognizable image including specified information to the display.

Abstract: A length adjustable arm and MEMS position detection equipment rotation test apparatus includes an extendible section and first and second rotary bodies provided at one end of a rotation device for variation of a feeding position of a first feeding component so that feeding component is capable of conducting various feeding ways. Further, a worktable is provided thereon with at least one rotation section, which has a surface on which a plurality of operation stations is mounted. As such, through circular change made by the rotation section in respect of the locations of the operation stations, an effect of effectively and efficiently burning or testing can be achieved. Further, the operation stations are provided, on a periphery thereof, with a turning section, and the turning section is operable to turn each of the operation stations in order to effectively conduct tests for various MEMS inertial components.

Abstract: An apparatus and method for providing notification information in an electronic device is provided. The method includes receiving a message when a message reception notification is limited. The method also includes providing a reception notification for the message selectively based on one or more of sender information of the message and whether the message includes notification setting information or not.

Abstract: The communication device includes a circuit board and a camera mechanism comprising a metal shielding and a camera module positioned on the circuit board. The metal shielding is arranged on the circuit board to cover the camera module and an antenna mechanism is arranged on the metal shielding and electrically connected to a ground region of the circuit board through the metal shielding. A wireless signal generated by the camera module is output by the antenna mechanism and radiates outward from the metal shielding.

Abstract: A device communicating wirelessly using internal function components as antenna includes a case, and within the case a circuit board, a camera mechanism, and a wireless communication mechanism. The case includes an upper shell and a lower shell, the lower shell defining a slot is filled with an insulation strip. The camera mechanism and the wireless communication mechanism are arranged on the circuit board. The wireless communication mechanism faces the slot. The wireless communication mechanism and the camera mechanism cooperatively form an antenna. A wireless signal generated by the wireless communication mechanism is enhanced by the antenna and radiates outward from the slot.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided. In one example, a semiconductor device structure includes a plurality of gate structures formed over a plurality of fin structures, the gate structures formed substantially orthogonal to the fin structures, wherein the plurality of gate structures includes a first gate structure having a first gate end width and a second gate structure having a second gate end width, wherein the second gate end width is shorter than the first gate end width.

Abstract: Some embodiments of the present disclosure relates to a method of forming a semiconductor device having a strained channel and an associated device. In some embodiments, the method includes performing a first etching process by selectively exposing a substrate to a first etchant to produce a recess defined by sidewalls and a bottom surface of the substrate. An implantation process is performed to form an etch stop layer along the bottom surface. A second etching process is performed by exposing the sidewalls and the bottom surface defining the recess to a second etchant to form a source/drain recess. The source/drain recess laterally extends past the etch stop layer in opposing directions. A semiconductor material is formed within the source/drain recess.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: A length adjustable arm and MEMS position detection equipment rotation test apparatus includes an extendible section and first and second rotary bodies provided at one end of a rotation device for variation of a feeding position of a first feeding component so that feeding component is capable of conducting various feeding ways. Further, a worktable is provided thereon with at least one rotation section, which has a surface on which a plurality of operation stations is mounted. As such, through circular change made by the rotation section in respect of the locations of the operation stations, an effect of effectively and efficiently burning or testing can be achieved. Further, the operation stations are provided, on a periphery thereof, with a turning section, and the turning section is operable to turn each of the operation stations in order to effectively conduct tests for various MEMS inertial components.

Abstract: An electronic device and a method for generating or storing data are provided. A method of operating an electronic device includes outputting a first application execution screen in a first reproduction area in response to an application execution request, outputting a second reproduction area for generating a command related to recording data generation in at least a part of the first reproduction area, outputting a second application execution screen in the second reproduction area, and generating recording data in response to an input for the second reproduction area.

Abstract: A semiconductor device includes a metal oxide semiconductor device disposed over a substrate and an interconnect plug. The metal oxide semiconductor device includes a gate structure located on the substrate and a raised source/drain region disposed adjacent to the gate structure. The raised source/drain region includes a top surface above a surface of the substrate by a distance. The interconnect plug connects to the raised source/drain region. The interconnect plug includes a doped region contacting the top surface of the raised source/drain region, a metal silicide region located on the doped region, and a metal region located on the metal silicide region.

Abstract: A semiconductor device includes a substrate having a source feature and a drain feature therein configured to enhance charge mobility, a gate stack directly over a portion of the source feature and a portion of the drain feature, a first salicide layer over substantially the entire source feature exposed by the gate stack, and a second salicide layer over substantially the entire drain feature exposed by the gate stack. The first salicide layer has a germanium concentration greater than about 0% by weight and less than about 3% by weight. The second salicide layer has a germanium concentration greater than about 0% by weight and less than about 3% by weight.

Abstract: A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.

Abstract: The present disclosure relates to a transistor device having a channel region comprising a sandwich film stack with a plurality of different layers that improve device performance, and an associated apparatus. In some embodiments, the transistor device has a source region and a drain region disposed within a semiconductor substrate. A sandwich film stack is laterally positioned between the source region and the drain region. The sandwich film stack has a lower layer, a middle layer of a carbon doped semiconductor material disposed over the lower layer, and an upper layer disposed over the middle layer. A gate structure is disposed over the sandwich film stack. The gate structure is configured to control a flow of charge carriers in a channel region located between the source region and the drain region.

Abstract: A method of forming a semiconductor device includes forming a gate stack over a first portion of a source and a first portion of a drain. The method includes depositing a first cap layer comprising silicon over a second portion of the source and depositing a second cap layer comprising silicon over a second portion of the drain. The method includes depositing a metal layer over the gate stack, the first cap layer and the second cap layer. The method includes annealing the semiconductor device until all of the silicon in the first and second cap layers reacts with metal from the metal layer, wherein the annealing causes metal from the metal layer to react with silicon in the first cap layer, the second cap layer, the source, and the drain. Annealing the semiconductor device includes forming a salicide layer having a germanium concentration less than 3% by weight.

Abstract: Embodiments of the present disclosure related to a head mounted display (HMD) that enable adjustment of lenses for a particular consumer. In some example embodiments, the HMD enables up to three-degrees of freedom of lens alignment with a consumer's pupils. For example, the HMD includes an actuation device or rotatable disc, both of which are in slidable engagement with at least one elongated members. Ends of the elongated members are coupled to a mirror/lens such that actuation of the actuation device or rotation of the disc translates the elongated member along an axis, which is in general alignment with a pupillary distance (PD) of the consumer. Additionally, the elongated members include mirror/lens interfaces to which the lenses are coupled. The mirror/lens interfaces are slidably and rotatably coupled to the elongated members thereby providing additional degrees of freedom for movement of the lenses.