Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Abstract: A flexible display includes: an antenna region, provided thereon with a metal trace configured as an antenna of an electronic device to receive or transmit a signal; and a display region configured to display screen content of the electronic device.

Abstract: The present disclosure relates to an antenna structure and a mobile terminal. The antenna structure includes: a first antenna and a second antenna; wherein the first antenna is configured to radiate signals of a first frequency band; the second antenna is configured to radiate signals of a second frequency band, and the second frequency band is higher than the first frequency band; and the second antenna is stacked and disposed above the first antenna.

Abstract: A terminal device is provided, which includes: a housing including a conductive frame provided with a first frame connecting point, a second frame connecting point and a grounding point; and a feeding point disposed on a circuit board. A first antenna is formed by the feeding point, the first signal wire, the first frame connecting point, the third signal wire and the conductive frame when the first frame connecting point is connected with the feeding point through a first signal wire and the second frame connecting point is disconnected from the feeding point. A second antenna is formed by the feeding point, the second signal wire, the third signal wire, the second frame connecting point and the conductive frame when the first frame connecting point is disconnected from the feeding point and the second frame connecting point is connected with the feeding point through a second signal wire.

Abstract: Aspect of the disclosure provide an antenna structure and electronic equipment. The antenna structure can include a nonmetallic frame, a radiator, and a Synthetic Aperture Radar (SAR) sensor. The radiator can be suspended inside the nonmetallic frame. The SAR sensor is connected to the radiator. Further, the SAR sensor can be configured for detecting capacitance between the radiator and a user.

Abstract: A suspension aligning machine includes a bottom board, an intermediate board, a top board, actuation modules, a jig, and a control device. The intermediate board is mounted on a top of the bottom board by first supporting elements and has through holes. The top board is arranged above the intermediate board with supporting elements provided therebetween to have the top board floating and suspending above the intermediate board. The actuation modules are mounted under the top board and respectively extend through the through holes of the intermediate board and form a gap with respect to the bottom board. The operation of the actuation modules causes the top board to vibrate and incline and workpieces deposited in the jig mounted on the top board are caused to move in the jig and fall into the cavities of the jig to line up with each other and thus orderly arranged.

Abstract: The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region; active regions extended from the semiconductor substrate and surrounded by isolation features; first transistors that include first gate stacks formed on the active regions and disposed in the first circuit region, the first gate stacks having a first gate pitch less than a reference pitch; and second transistors that include second gate stacks formed on the active regions and disposed in the second circuit region, the second gate stacks having a second pitch greater than the reference pitch. The second transistors are high-frequency transistors and the first transistors are logic transistors.

Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut fl

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: A method includes forming a dummy gate stack over a semiconductor region, removing the dummy gate stack to form a trench between gate spacers, forming a replacement gate dielectric extending into the trench, and forming a replacement gate electrode on the replacement gate dielectric. The forming the replacement gate electrode includes depositing a metal-containing layer. The depositing the metal-containing layer includes depositing a lower layer having a first average grain size, and depositing an upper layer over the lower layer. The lower layer and the upper layer are formed of a same material, and the upper layer has a second average grain size greater than the first average grain size. Source and drain regions are formed on opposing sides of the replacement gate electrode.

Abstract: A terminal device is provided, which includes: a housing including a conductive frame provided with a first frame connecting point, a second frame connecting point and a grounding point; and a feeding point disposed on a circuit board. A first antenna is formed by the feeding point, the first signal wire, the first frame connecting point, the third signal wire and the conductive frame when the first frame connecting point is connected with the feeding point through a first signal wire and the second frame connecting point is disconnected from the feeding point. A second antenna is formed by the feeding point, the second signal wire, the third signal wire, the second frame connecting point and the conductive frame when the first frame connecting point is disconnected from the feeding point and the second frame connecting point is connected with the feeding point through a second signal wire.

Abstract: The present disclosure relates to an antenna structure and a mobile terminal. The antenna structure includes: a first antenna and a second antenna; wherein the first antenna is configured to radiate signals of a first frequency band; the second antenna is configured to radiate signals of a second frequency band, and the second frequency band is higher than the first frequency band; and the second antenna is stacked and disposed above the first antenna.

Abstract: A flexible display includes: an antenna region, provided thereon with a metal trace configured as an antenna of an electronic device to receive or transmit a signal; and a display region configured to display screen content of the electronic device.

Abstract: A suspension aligning machine includes a bottom board, an intermediate board, a top board, actuation modules, a jig, and a control device. The intermediate board is mounted on a top of the bottom board by first supporting elements and has through holes. The top board is arranged above the intermediate board with supporting elements provided therebetween to have the top board floating and suspending above the intermediate board. The actuation modules are mounted under the top board and respectively extend through the through holes of the intermediate board and form a gap with respect to the bottom board. The operation of the actuation modules causes the top board to vibrate and incline and workpieces deposited in the jig mounted on the top board are caused to move in the jig and fall into the cavities of the jig to line up with each other and thus orderly arranged.

Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Abstract: An electronic device comprising: a display configured to output image data; and at least one processor configured to: detect an input; select a portion of the image data based on the input; and generate a preview of the image data based on the selected portion.

Abstract: A wearable device comprises a main body and at least one belt. The main body comprises a casing, and the casing comprises at least one first engaging member and at least one first positioning member. The at least one belt comprises a connecting portion and an adapter. The adapter is connected to the connection portion of the at least one belt, and comprises at least one second engaging member and at least one second positioning member. The at least one first positioning member is connected to the at least one second positioning member correspondingly for positioning the belt on the main body. The at least one first engaging member is engaged with the at least one second engaging member correspondingly, so that the belt is fixed to the main body. Consequently, the main body and the belt connect to each other firmly and are easy to be assembled and disassembled.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: A system for sensing element adjustment and material belt detection comprises a machine body, adjustable clamping device, material disk and sensing system. The adjustable clamping device being configured on a material belt of said machine body, an adjustable plate being configured on an adjusting element of a main body of the adjustable clamping device, and an adjustable rod being configured on the adjustable plate allow forming a triangle pivot support with two fixing rods of the main body. Furthermore, an elastic element is configured between the adjustable plate and main body to allow the adjustable plate to drive the adjustable rod to achieve an elastic adjustment support in such a way to allow the mounting of the material disks of different hole diameters through the adjustable rod. Furthermore, a material belt detection device of the present invention may detect the material belt stably and effectively.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).