Abstract: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms.

Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

Abstract: A thixotropic conductive composition is disclosed that can be used to form conductive features on an electronic device. The thixotropic composition comprises a conjugated polymer, a solvent, and multi-wall carbon nanotubes. The conjugated polymer and the solvent are capable of forming a thixotropic fluid. This enables excellent stability of the carbon nanotubes in the composition at a very high loading. The composition has a long shelf life.

Abstract: A formulation composition for preparing a print head face plate coating includes a sol containing a mixture of monomers including at least one fluoroalkyl alkoxysilane monomer; a solvent; a catalyst; and water. The formulation composition is stable towards gelation for more than 1.5 hours. A method of preparing a print head involves preparing a formulation composition containing a sol prepared from a mixture of monomers including at least one fluoroalkyl alkoxysilane monomer, a solvent, a catalyst, and water; applying the formulation composition as a sol on a surface of the print head; and curing the formulation composition to form a crosslinked siloxane layer on the print head. A method of printing involves using the print head to apply inkjet ink to a substrate.

Abstract: Transistors comprising semiconducting layers of diketopyrrolopyrrole (DPP) copolymers are disclosed. Processes for purifying DPP copolymers are also disclosed. An organic phase containing the DPP copolymer is treated with an aqueous ammonia solution and then with a palladium scavenger. The DPP copolymer is then isolated, and has a very low palladium content. The resulting DPP copolymer has high mobility.

Abstract: Processes for purifying diketopyrrolopyrrole (DPP) copolymers are disclosed. An organic phase containing the DPP copolymer is treated with an aqueous ammonia solution and then with a palladium scavenger. The DPP copolymer is then isolated, and has a very low palladium content. The resulting DPP copolymer has high mobility.

Abstract: A semiconductor composition includes a semiconducting polymer containing a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. An electronic device contains a semiconductor layer including a semiconductor composition having a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. A semiconductor composition contains a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety, a solvent selected from the group consisting of tetrachloroethane, dichlorobenzene, chlorobenzene, chlorotoluene, and a mixture thereof, and a carbon nanotube.

Abstract: An intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. A method of preparing an intermediate transfer member including mixing a coating solution containing siloxyfluorocarbon precursor materials; applying the coating solution as a sol on a substrate; curing the coating solution on the substrate to form an intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. The surface free energy of the intermediate transfer member may be from about 10 mN/m to about 40 mN/m. A method of printing an image to a substrate includes applying an inkjet ink to an intermediate transfer member containing a layer of a siloxyflurocarbon networked polymer; spreading the ink onto the intermediate transfer member; inducing a property change of the ink; and transferring the ink to a substrate.

Abstract: A crosslinked siloxane composition contains the polymerization product of a mixture containing from about 2 to about 12 alkoxysilane precursor materials, where at least one of the alkoxysilane precursor materials is a hydrophilic alkoxysilane precursor material, and at least one of the alkoxysilane precursor materials is a hydrophobic alkoxysilane precursor material. A method of printing an image to a substrate involves applying an inkjet ink to an intermediate transfer member using an inkjet printhead, spreading the ink onto the transfer member, inducing a property change of the ink, and transferring the ink to a substrate, where the intermediate transfer member comprises a crosslinked siloxane composition containing the polymerization product of a mixture comprising from about 2 to about 12 alkoxysilane precursor materials, where at least one of the precursor materials is hydrophilic and at least one is hydrophobic.

Abstract: Processes for purifying diketopyrrolopyrrole (DPP) copolymers are disclosed. An organic phase containing the DPP copolymer is treated with an aqueous ammonia solution and then with a palladium scavenger. The DPP copolymer is then isolated, and has a very low palladium content. The resulting DPP copolymer has high mobility.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

Abstract: A process for preparing a palladium nanoparticle ink comprises reacting a reaction mixture comprising a palladium salt, a stabilizer, a reducing agent, and an optional solvent to directly form the palladium nanoparticle ink. During the formation of the palladium nanoparticle ink, the palladium nanoparticles are not isolated from the reaction mixture.

Abstract: A chemical sensor is disclosed. The chemical sensor is an electronic device including in specific embodiments a first transistor and a second transistor. The first transistor includes a semiconducting layer made of a first semiconductor and carbon nanotubes. The second transistor includes a semiconducting layer made of a second semiconductor, and does not contain carbon nanotubes. The two transistors vary in their response to chemical compounds, and the differing response can be used to determine the identity of certain chemical compounds. The chemical sensor can be useful as a disposable sensor for explosive compounds such as trinitrotoluene (TNT). The electronic device is used in conjunction with an analyzer that processes information generated by the electronic device.

Abstract: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms.

Abstract: A metal nanoparticle dispersion is made by mixing ingredients. The ingredients comprise a solvent; a plurality of metal nanoparticles, the metal nanoparticles comprising an oxide formed thereon; and a reducing agent. The reducing agent is included in an amount sufficient to react with the oxide to significantly increase a conductivity of a metal film that is formable from the nanoparticle dispersion using a deposition and heating process compared with the conductivity of a metal film formable from the same nanoparticle composition without the reducing agent using the same deposition and heating process. Methods for making the metal nanoparticle dispersion, as well as for making a film from the dispersion, are also disclosed.

Abstract: An intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. A method of preparing an intermediate transfer member including mixing a coating solution containing siloxyfluorocarbon precursor materials; applying the coating solution as a sol on a substrate; curing the coating solution on the substrate to form an intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. The surface free energy of the intermediate transfer member may be from about 10 mN/m to about 40 mN/m. A method of printing an image to a substrate includes applying an inkjet ink to an intermediate transfer member containing a layer of a siloxyflurocarbon networked polymer; spreading the ink onto the intermediate transfer member; inducing a property change of the ink; and transferring the ink to a substrate.

Abstract: A formulation composition for preparing a print head face plate coating includes a sol containing a mixture of monomers including at least one fluoroalkoxysilane monomer; a solvent; a catalyst; and water. The formulation composition is stable towards gelation for more than 1.5 hours. A method of preparing a print head involves preparing a formulation composition containing a sol prepared from a mixture of monomers including at least one fluoroalkoxysilane monomer, a solvent, a catalyst, and water; applying the formulation composition as a sol on a surface of the print head; and curing the formulation composition to form a crosslinked siloxane layer on the print head. A method of printing involves using the print head to apply inkjet ink to a substrate.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.