Abstract: A thixotropic conductive composition is disclosed that can be used to form conductive features on an electronic device. The thixotropic composition comprises a conjugated polymer, a solvent, and multi-wall carbon nanotubes. The conjugated polymer and the solvent are capable of forming a thixotropic fluid. This enables excellent stability of the carbon nanotubes in the composition at a very high loading. The composition has a long shelf life.

Abstract: A crosslinked siloxane composition contains the polymerization product of a mixture containing from about 2 to about 12 alkoxysilane precursor materials, where at least one of the alkoxysilane precursor materials is a hydrophilic alkoxysilane precursor material, and at least one of the alkoxysilane precursor materials is a hydrophobic alkoxysilane precursor material. A method of printing an image to a substrate involves applying an inkjet ink to an intermediate transfer member using an inkjet printhead, spreading the ink onto the transfer member, inducing a property change of the ink, and transferring the ink to a substrate, where the intermediate transfer member comprises a crosslinked siloxane composition containing the polymerization product of a mixture comprising from about 2 to about 12 alkoxysilane precursor materials, where at least one of the precursor materials is hydrophilic and at least one is hydrophobic.

Abstract: Processes for preparing diketopyrrolopyrrole (DPP) copolymers are disclosed. A Suzuki polycondensation method is used in which a DPP monomer is reacted with an aryl comonomer using a palladium catalyst in a solvent. The solvent contains an organic phase and an aqueous phase. Reaction conditions are optimized.

Abstract: A semiconductor composition includes a semiconducting polymer containing a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. An electronic device contains a semiconductor layer including a semiconductor composition having a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. A semiconductor composition contains a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety, a solvent selected from the group consisting of tetrachloroethane, dichlorobenzene, chlorobenzene, chlorotoluene, and a mixture thereof, and a carbon nanotube.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R1, m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: A polymer of Formula (I) wherein Ar, Y, Z, R3, R4, k, m, x, and n are as described herein. The isothioindigo-based polymer may be used in a semiconducting layer of an electronic device.

Abstract: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.

Abstract: A semiconducting copolythiophene composition that includes repeating units obtained from the copolymerization of compounds of Formula (2): and Formula (3): in which the copolythiophene has at least two repeating units (possessing side chains, such as alkyl side chains), which are arranged in manner such that the side chains on the polythiophene backbone are distributed non-uniformly, is described. Electronic devices incorporating such copolythiophene compositions are also described.

Abstract: A polymer of Formula (I) wherein Ar, R1, R2, R3, R4, Y, x, k, m, and n are as described herein. The polymer may be used in a semiconducting layer of an electronic device.

Abstract: A process for preparing a palladium nanoparticle ink comprises reacting a reaction mixture comprising a palladium salt, a stabilizer, a reducing agent, and an optional solvent to directly form the palladium nanoparticle ink. During the formation of the palladium nanoparticle ink, the palladium nanoparticles are not isolated from the reaction mixture.

Abstract: A polymer of Formula (I) wherein Ar, Y, Z, R3, R4, k, m, x, and n are as described herein. The isothioindigo-based polymer may be used in a semiconducting layer of an electronic device.

Abstract: A polymer of Formula (I) wherein Ar, R1, R2, R3, R4, Y, x, k, m, and n are as described herein. The polymer may be used in a semiconducting layer of an electronic device.

Abstract: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.

Abstract: The present application discloses, in various embodiments, semiconducting layer compositions comprising a non-amorphous semiconductor material and a molecular glass. Electronic devices, such as thin-film transistors, are also disclosed. The semiconducting layer compositions exhibit good film-forming properties and high mobility.

Abstract: A compound of Formula (I): wherein X, A, Y, Z, R1, R2, Ar, n and m are as described herein. The compound of Formula (I) is useful as part of a semiconducting composition to be deposited upon a surface. When heated, the compound of Formula (I) is converted to a crystalline semiconductor with high mobility.

Abstract: A chemical sensor is disclosed. The chemical sensor is an electronic device including in specific embodiments a first transistor and a second transistor. The first transistor includes a semiconducting layer made of a first semiconductor and carbon nanotubes. The second transistor includes a semiconducting layer made of a second semiconductor, and does not contain carbon nanotubes. The two transistors vary in their response to chemical compounds, and the differing response can be used to determine the identity of certain chemical compounds. The chemical sensor can be useful as a disposable sensor for explosive compounds such as trinitrotoluene (TNT). The electronic device is used in conjunction with an analyzer that processes information generated by the electronic device.

Abstract: Disclosed herein is an asymmetrical semiconducting compound of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.

Abstract: A process for producing silver nanoparticles includes receiving a first mixture comprising a silver salt, an organoamine, a first solvent, and a second solvent; and reacting the first mixture with a reducing agent solution to form organoamine-stabilized silver nanoparticles. The polarity index of the first solvent is less than 3.0, and the polarity index of the second solvent is higher than 3.0. The nanoparticles are more dispersible or soluble in the first solvent.