Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The semiconducting layer has been deposited on an alignment layer that has been aligned in the direction between the source and drain electrodes. The resulting device has increased charge carrier mobility.

Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

Abstract: Disclosed is a small molecule semiconductor of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.

Abstract: A semiconducting tetrahydroacridinoacridine compound of Formula (I): wherein R1 to R12 are as described herein. The compounds are designed to ensure air stability, good solubility, and high mobility.

Abstract: A thiaxanthenothiaxanthene compound of Formula (I): wherein R1 to R10 are independently selected from the group consisting of hydrogen, an alkyl group, a substituted alkyl group, an alkoxy group, an alkylthio group, an alkenyl group, a substituted alkenyl group, an ethynyl group, a substituted ethynyl group, an aryl group, a substituted aryl group, a heteroaryl group, a substituted heteroaryl group, a trialkylsilyl group, a fluorohydrocarbon group, a cyano group and a halogen; and wherein the semiconductor of Formula (I) is predominantly crystalline or liquid crystalline. The compounds are designed to ensure air stability, good solubility, and high mobility.

Abstract: A compound of Formula (I): wherein X, A, Y, Z, R1, R2, Ar, n and m are as described herein. The compound of Formula (I) is useful as part of a semiconducting composition to be deposited upon a surface. When heated, the compound of Formula (I) is converted to a crystalline semiconductor with high mobility.

Abstract: Disclosed is a small molecule semiconductor of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.

Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R1, m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: A polymer of Formula (I) wherein R1, R2, Ar1, Ar2, and n are as described herein. The polymer may be used in a semiconducting layer of an electronic device.

Abstract: Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance.

Abstract: The present application discloses, in various embodiments, semiconducting layer compositions comprising a non-amorphous semiconductor material and a molecular glass. Electronic devices, such as thin-film transistors, are also disclosed. The semiconducting layer compositions exhibit good film-forming properties and high mobility.

Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Abstract: Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance.

Abstract: Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance.

Abstract: Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance.