Abstract: A refresh command is received from a memory controller. An interruptible refresh containing multiple segment refreshes is initiated. The segment refreshes are separated by interrupt boundaries. A command is received before execution of a segment refresh. The first command is executed and execution of the first segment refresh is delayed at a first interrupt boundary. Alternatively, a first number of segment refreshes to execute is received from a memory controller. The received first number of segment refreshes is executed. A second number of segment refreshes to execute is received from a memory controller. The received second number of segment refreshes is executed. No segment refreshes are executed between the execution of the first number of segment refreshes and the execution of the second number of segment refreshes.

Abstract: Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment detects that a specified number of correctable errors is exceeded. In another step, an exemplary embodiment detects the occurrence of an uncorrectable error. In another step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.

Abstract: A method, system and computer program product are provided for implementing command timing adjustments to alleviate Dynamic Random Access Memory (DRAM) failures in a computer system. A predefined DRAM failure is detected. Responsive to the detected failure, a set of timers is adjusted for controlling predetermined timings used to access the DRAM. Responsive to the failure being resolved by the adjusted set of timers, checking for a predetermined level of performance is performed.

Abstract: A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.

Abstract: A method and apparatus for refreshing a row of a memory device prior to a scheduled refresh. A memory array may include a plurality of memory cells. The memory array may be configured to be refreshed at a first refresh time interval. The memory device may also include an intermediate refresh circuit. The intermediate refresh circuit may be configured to detect a triggering event and request a refresh for a row of the memory array in response to detecting a triggering event.

Abstract: A method, system and computer program product are provided for implementing ECC (Error Correction Codes) redundancy using reconfigurable logic blocks in a computer system. When a fail is detected when reading from memory, it is determined if the incorrect data is in the data or the ECC component of the data. When incorrect data is found in the ECC component of the data, and an actionable threshold is not reached, a predetermined Reliability, Availability, and Serviceability (RAS) action is taken. When the actionable threshold is reached with incorrect data identified in the ECC component of the data, an analysis process is performed to determine if the ECC logic is faulty. When a fail in the ECC logic is detected, the identified ECC failed logic is replaced with a spare block of logic.

Abstract: Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment detects that a specified number of correctable errors is exceeded. In another step, an exemplary embodiment detects the occurrence of an uncorrectable error. In another step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.

Abstract: A method and circuit for implementing a chip to chip calibration in a chip stack, for example, with through silicon vias (TSV) stack, and a design structure on which the subject circuit resides are provided. A first chip and a second chip are included within a semiconductor chip stack. The semiconductor chip stack includes a vertical stack optionally provided with Though Silicon Via (TSV) stacking of the chips. At least one of the first chip and the second chip includes a calibration control circuit and a performance indicator circuit coupled to the calibration control circuit to train and calibrate at least one of the first chip and the second chip to provide enhanced performance and reliability for the semiconductor chip stack.

Abstract: A method, system and computer program product are provided for implementing command timing adjustments to alleviate Dynamic Random Access Memory (DRAM) failures in a computer system. A predefined DRAM failure is detected. Responsive to the detected failure, a set of timers is adjusted for controlling predetermined timings used to access the DRAM. Responsive to the failure being resolved by the adjusted set of timers, checking for a predetermined level of performance is performed.

Abstract: An embodiment is a method for operating a memory system, the method including storing initial calibration values for each of a first frequency and second frequency for a memory device, performing a periodic calibration to determine a calibration update value for operation of the memory device at the first frequency, combining the calibration update value with the initial calibration value for the first frequency to provide an updated calibration for operation of the memory device at an operating frequency of the first frequency and receiving a frequency change request at a memory controller associated with the memory device. The method further includes blocking traffic to the memory device, adjusting operating frequency to the second frequency while the memory device remains powered, combining the calibration update value with the initial calibration value for the second frequency for operation at the second frequency and enabling traffic to the memory device.

Abstract: An embodiment is a method includes writing a first set of memory device parameters to a first mode register in a memory device, wherein the first set of memory device parameters correspond to a first frequency, monitoring selected parameters for the memory system while the memory device operates at the first frequency and predicting a second frequency that the memory device will operate at subsequent to the first frequency, the predicting being based on the monitored selected parameters. The method further includes writing a second set of memory device parameters to second mode register in the memory device, receiving a frequency change request at a memory controller associated with the memory device, the frequency change request to operate at a new frequency and updating the first mode register with the second set of memory device parameters from the second mode register responsive to the new frequency being equal to the second frequency.

Abstract: A method, system and computer program product are provided for implementing hardware assisted Dynamic Random Access Memory (DRAM) repair in a computer system that supports ECC. A data register providing DRAM repair is selectively provided in one of the Dynamic Random Access Memory (DRAM), a memory controller, or a memory buffer coupled between the DRAM and the memory controller. The data register is configured to map to any address. Responsive to the configured address being detected, the reads to or the writes from the configured address are routed to the data register.

Abstract: A method and circuit for implementing a chip to chip calibration in a chip stack, for example, with through silicon vias (TSV) stack, and a design structure on which the subject circuit resides are provided. A first chip and a second chip are included within a semiconductor chip stack. The semiconductor chip stack includes a vertical stack optionally provided with Though Silicon Via (TSV) stacking of the chips. At least one of the first chip and the second chip includes a calibration control circuit and a performance indicator circuit coupled to the calibration control circuit to train and calibrate at least one of the first chip and the second chip to provide enhanced performance and reliability for the semiconductor chip stack.