Abstract: Disclosed is a lithium ion secondary battery having a positive electrode, a negative electrode and a non-aqueous electrolyte composition (electrolytic solution), characterized in that: the positive electrode includes a positive electrode active material represented by: aLi[Li1/3M12/3]O2.(1?a)LiM2O2 (where M1 represents at least one kind of metal element selected from the group consisting of Mn, Ti, Zr and V; M2 represents at least one kind of metal element selected from the group consisting of Ni, Co, Mn, Al, Cr, Fe, V, Mg and Zn; and a represents a composition ratio and satisfies a relationship of 0<a<1); the negative electrode includes a negative electrode active material containing silicon; and the non-aqueous electrolyte composition includes a lithium salt (CnF2n+1SO2)(CmF2m+1SO2)NLi (where m and n each independently represent an integer of 2 or more as a support electrolyte. This lithium ion secondary battery attains a high capacity and good cycle characteristics.

Abstract: A control device of a secondary battery uses, as material of a positive electrode, positive electrode active material that shows a difference of an open circuit voltage curve between charging and discharging. A storing unit stores, as discharge open circuit voltage information, a relationship between an SOC in a discharge process and an open circuit voltage for each changeover SOC that is an SOC when changing a state of the secondary battery from the charge to the discharge. An SOC calculating unit calculates the SOC of the secondary battery in the discharge process on the basis of a changeover SOC when actually performing the change from the charge to the discharge and the discharge open circuit voltage information stored in the storing unit.

Abstract: A skew adjustment circuit, provided in an integrated circuit device having a plurality of signal lines transmitting a plurality of signals respectively, and a plurality of buffer circuits to which a plurality of signals transmitted through the signal lines are respectively input, has: a plurality of delay circuits, respectively provided in stages preceding the buffer circuits; a monitoring circuit monitoring changes in the signals of the plurality of signal lines; and a delay adjustment circuit, which decides delay amounts for the plurality of delay circuits based on a monitoring result output of the monitoring circuit, and sets the delay amounts in the plurality of delay circuits. The monitoring circuit detects, as the monitoring result, a number of signal changes in the signal lines in which a signal change occurs in a monitoring period, and the delay adjustment circuit decides the delay amounts based on the number of signal changes.

Abstract: A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.

Abstract: In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.

Abstract: A photosensitive insulating resin composition includes (A) an alkali-soluble resin that contains (a1) a structural unit derived from a crosslinkable monomer and (a2) a structural unit having a phenolic hydroxyl group, (B) a crosslinking agent, (C) a photosensitive compound, and (D) a solvent.

Abstract: Disclosed is a lithium ion secondary battery having a positive electrode, a negative electrode and a non-aqueous electrolyte composition (electrolytic solution), characterized in that: the positive electrode includes a positive electrode active material represented by: aLi[Li1/3M12/3]O2.(1?a)LiM2O2 (where M1 represents at least one kind of metal element selected from the group consisting of Mn, Ti, Zr and V; M2 represents at least one kind of metal element selected from the group consisting of Ni, Co, Mn, Al, Cr, Fe, V. Mg and Zn; and a represents a composition ratio and satisfies a relationship of 0<a<1); the negative electrode includes a negative electrode active material containing silicon; and the non-aqueous electrolyte composition includes a lithium salt (CnF2n+1SO2)(CmF2m+1SO2)NLi (where in and n each independently represent an integer of 2 or more as a support electrolyte. This lithium ion secondary battery attains a high capacity and good cycle characteristics.

Abstract: In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.

Abstract: A plasma processing apparatus which can adjust ion energy on a wafer to a value in a desired range to perform machining with high precision or processing stably for a long time is provided. To the plasma processing apparatus which processes a wafer mounted on a mounting surface of an upper portion of a stage using plasma formed in a processing chamber while supplying radio frequency power from a power supply to an electrode disposed in the stage a detector disposed on an outer circumferential side of the mounting surface of the stage to detect a differential component Vpp between the maximum value and the minimum value and a DC component Vdc from a value of a bias voltage formed thereabove and a controller to adjust an output of the radio frequency bias power to make a value of Vpp/2+|Vdc| constant based on an output from the detector are provided.

Abstract: A compact reactor with excellent productivity and heat dissipation is provided. Reactor 1? includes a coil formed by spirally winding a wire 2w and a magnetic core 3 having an inside core portion inserted into the coil and an outside core portion 32 coupled to the inside core portion. These core portions form a closed magnetic circuit. The coil is covered with an inside resin portion 4 on the outer circumference thereof to form a coil molded unit 20? with its shape being held. The outer circumference of a combination unit 10 of the coil molded unit 20? and the magnetic core 3 is covered with an outside resin portion 5?. Reactor 1? does not have a case and is thus compact. A surface of the outside core portion 32 on the installation side (core installation surface 32d) is exposed form the outside resin portion 5? and is in direct contact with a fixed object, thereby achieving excellent heat dissipation.

Abstract: A compact reactor with excellent productivity and heat dissipation is provided. Reactor 1? includes a coil formed by spirally winding a wire 2w and a magnetic core 3 having an inside core portion inserted into the coil and an outside core portion 32 coupled to the inside core portion. These core portions form a closed magnetic circuit. The coil is covered with an inside resin portion 4 on the outer circumference thereof to form a coil molded unit 20? with its shape being held. The outer circumference of a combination unit 10 of the coil molded unit 20? and the magnetic core 3 is covered with an outside resin portion 5?. Reactor 1? does not have a case and is thus compact. A surface of the outside core portion 32 on the installation side (core installation surface 32d) is exposed form the outside resin portion 5? and is in direct contact with a fixed object, thereby achieving excellent heat dissipation.

Abstract: A skew adjustment circuit, provided in an integrated circuit device having a plurality of signal lines transmitting a plurality of signals respectively, and a plurality of buffer circuits to which a plurality of signals transmitted through the signal lines are respectively input, has: a plurality of delay circuits, respectively provided in stages preceding the buffer circuits; a monitoring circuit monitoring changes in the signals of the plurality of signal lines; and a delay adjustment circuit, which decides delay amounts for the plurality of delay circuits based on a monitoring result output of the monitoring circuit, and sets the delay amounts in the plurality of delay circuits. The monitoring circuit detects, as the monitoring result, a number of signal changes in the signal lines in which a signal change occurs in a monitoring period, and the delay adjustment circuit decides the delay amounts based on the number of signal changes.

Abstract: To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

Abstract: The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.

Abstract: A photosensitive insulating resin composition includes (A) an alkali-soluble resin that contains (a1) a structural unit derived from a crosslinkable monomer and (a2) a structural unit having a phenolic hydroxyl group, (B) a crosslinking agent, (C) a photosensitive compound, and (D) a solvent.

Abstract: To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

Abstract: The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.

Abstract: Positive photosensitive insulating resin compositions of the invention contain at least (A) an alkali soluble resin having a phenolic hydroxyl group, (B) a compound having a quinonediazido group, (C) crosslinked fine particles, (D) a compound containing at least two alkyletherified amino groups in the molecule, and (F) a solvent The resin compositions have excellent resolution, electrical insulating properties and thermal shock properties. Cured products of the invention are obtained by curing these resin compositions, and they show good adhesive properties.

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple.