Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiC2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO2, B2O3, Al2O3 and at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler.

Abstract: A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO2, B2O3, Al2O3 and at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler.

Abstract: A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls within a range of 32 mol % to 48 mol %, a content of Al2O3 falls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of B2O3 falls within a range of 3 mol % to 10 mol %.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

Abstract: A power unit for a vehicle can avoid an increase in the longitudinal size of an engine body and a vehicle body due to the provision of a clutch actuator. Clutches for switching between the connection and disconnection of the transmission of power are provided in a power transmission path for transmitting a rotational drive force of a crankshaft to a drive wheel. A clutch cover is joined to a side portion of a crankcase. A clutch chamber for accommodating the clutches is formed between the crankcase and the clutch cover. A clutch actuator for controlling the switching between an engaged condition and disengaged condition of the clutches is mounted on an engine body. The clutch actuator is provided on an upper portion of the clutch cover.

Abstract: A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

Abstract: A transmission device for an internal combustion engine for preventing components thereof from being damaged for making the components smaller in size and weight, reducing a load and a time required to shift gear positions for increased operability and for reducing overall size and weight. A transmission device for an internal combustion engine includes a shift drum angularly movable by a star-shaped drum plate that is turned when a change spindle is turned and a stopper roller for limiting the star-shaped drum plate against turning movement. The star-shaped drum plate includes peaks corresponding to a plurality of gear positions and valleys interposed between the peaks. A selected one of the valleys includes a curved wall for being more gently contacted by the stopper roller than curved surfaces of the other valleys which are contacted by the stopper roller.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, Al2O3, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals).

Abstract: A device housing package includes a substrate in a form of a rectangle, having a mounting region of a device at an upper surface thereof; a frame body disposed on the substrate so as to extend along an outer periphery of the mounting region, the frame body having a cutout formed at a part thereof; and an input-output terminal disposed in the cutout. The input-output terminal includes a first insulating layer, a second insulating layer overlaid on the first insulating layer, and a third insulating layer overlaid on the second insulating layer. First terminals set at a predetermined potential are disposed on an upper surface of the first insulating layer. Second terminals set at a predetermined potential are disposed on a lower surface of the first insulating layer. Third terminals through which AC signals flow are disposed on an upper surface of the second insulating layer.

Abstract: A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Abstract: A resin-sealed semiconductor device 10 of the present invention includes: a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Abstract: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

Abstract: A glass composition for protecting a semiconductor junction contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

Abstract: Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.

Abstract: A shift drum drive system for a transmission includes a drive member and a power transmission device configured to transmit the rotational power of the drive member to a shift drum. The drive member and at least a part of the power transmission device being disposed on a lateral side of a crankcase on the side of one end in the axial direction of the shift drum, to reduce the area occupied by the shift drum drive system inclusive of the drive member on a lateral side of the crankcase on the side of one end in the axial direction of the shift drum, and thereby to contrive a reduction in engine size. The drive member and the shift drum are disposed so as to at least partly overlap with each other when viewed along the axial direction of the shift drum.

Abstract: In a first hydraulic clutch device 36 provided with a first clutch inner 84, a pressure bearing plate portion 84D disposed on the first clutch inner 84 opposing driving and driven friction plates 85 and 86, a clutch piston 91 that is consecutively disposed to a pressurizing plate portion 91D and moves to the side to pressurize the driving and driven friction plates 85 and 86 in accordance with an increase in a hydraulic pressure in a control hydraulic chamber 96, a piston guide 92 that forms a control hydraulic chamber 96 between itself and the clutch piston 91, and a canceller plate 93 that forms a hydraulic canceller chamber 97 on the side opposite to the control hydraulic pressure chamber 96, a projection portion 133 of the canceller plate 93 and a notch portion 122 disposed in the piston guide 92 and engaged with the projection portion 133 are engaged with each other and assembled, and a clip 135 that is engaged with an engagement groove 123 of the notch portion 122 and regulates axial movement of the can

Abstract: A crankcase of an internal combustion engine includes protruding portions formed on an outer surface of the crankcase which are constituted of a pair of left and right wall members, and a vibration isolating rubber is fitted between the wall members. The crankcase configured in this manner prevents the generation of sounds from a protruding portion of the crankcase and is light-weight.