Abstract: In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.

Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.

Abstract: A capacitive sensor for detecting the presence of a substance includes a plurality of upstanding conductive pillars arranged within a first layer of the sensor, a first electrode connected to a first group of the pillars, a second electrode connected to a second, different group of the pillars, and a dielectric material arranged adjacent the pillars, for altering the capacitance of the sensor in response to the presence of said substance.

Abstract: A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).

Abstract: The light dose received by perishable goods is an important parameter in determining the lifetime of those goods. A light sensor is described having a photosensitive element which changes its material property according to the light dose received. This change can be detected electrically by electrodes in the light sensor. Because the change in material property is permanent, this removes the need for a memory to store a value representing the light dose received by the light sensor.

Abstract: A device is provided that includes a battery layer on a substrate, where a first battery cell is formed in the battery layer. The first battery cell includes a first anode, a first cathode, and a first electrolyte arranged between the first anode and the first cathode, where the first anode, the first cathode, and the first electrolyte are arranged in the battery layer such that perpendicular projections onto the substrate of each of the first anode and the first cathode are non-overlapping. A method of manufacturing such device is also provided. A system is also provide that includes such device for supplying power to an electronic device.

Abstract: A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element.

Abstract: Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.

Abstract: Disclosed is an integrated circuit (IC) comprising a substrate (10) including a plurality of circuit elements and a metallization stack (20) covering said substrate for providing interconnections between the circuit elements, wherein the top metallization layer of said stack carries a plurality of metal portions (30) embedded in an exposed porous material (40) for retaining a liquid, said porous material laterally separating said plurality of metal portions. An electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.

Abstract: A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes a relative humidity sensor on the substrate. The relative humidity sensor includes a first sensor electrode, a second sensor electrode, and a humidity sensitive layer covering the first and second electrodes. The integrated circuit further includes a thermal conductivity based gas sensor on the substrate. The thermal conductivity based gas sensor has an electrically resistive sensor element located above the humidity sensitive layer.

Abstract: A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a capacitive gas sensor on a semiconductor substrate. The gas sensor includes first and second capacitor electrodes on the substrate. The gas sensor also includes a gas sensitive material having a dielectric constant that is sensitive to a gas to be detected. The gas sensitive material at least partially surrounds the capacitor electrodes and extends between the capacitor electrodes and the substrate.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes an electrical impedance based gas sensor located on the substrate. The sensor includes first and second electrically conductive sensor electrodes. Each sensor electrode is enclosed in an electrically conductive corrosion protection material. The sensor also includes a gas sensitive material located between the sensor electrodes. The impedance of the gas sensitive material is sensitive to a gas to be sensed.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.

Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

Abstract: A read only memory is manufactured with a plurality of transistors (4) on a semiconductor substrate (2). A low-k dielectric (10) and interconnects (14) are provided over the transistors (4). To program the read only memory, the low-k dielectric is implanted with ions (22) in unmasked regions (20) leaving the dielectric unimplanted in masked regions (18). The memory thus formed is difficult to reverse engineer.