Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract: Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: A receiver for a multi-mode wireless device is provided. The receiver has multiple analog RF front end modules, with each module supporting a different mode of operation. The receiver has a single digital backend module for generating a digital baseband signal. A controller selects one of the available RF modules to use, and the selected RF module provides an analog communication signal to the digital backend. Each available mode has an associated set of factors. When a particular mode is selected, the set of factors associated with the selected mode is provided to the digital backend. The digital backend uses these factors to adjust the processing characteristics of its components, such as its analog to digital converter, filters, and gain controller. In this way, the single digital backend is adaptable to the requirements of each of the available radio modes.

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract: A multi-band communication device configured with a mobile communication device for voice or data communication over a cellular, satellite or other communication network and configured with an auxiliary communication system configured to receive and/or transmit an auxiliary communication signal. The mobile communication device and auxiliary communication system are integrated into the same components within the multi-band communication device thereby allowing the components to share the processing tasks associated with each communication device within the multi-band communication device. The auxiliary communication device may be configured to operate during standby mode of the mobile communication device, such as during reception of a paging signal. The auxiliary communication device may comprise, but is not limited to, AM or FM radio, personal communication devices such as FRS, GMRS, or weather band radio.

Abstract: A low noise filter is arranged to receive an input signal from a downconverter. The low noise filter is constructed to block or cancel any DC offset in the input signal, as well as filter selected frequency components from the input signal. The low noise filter uses a shared capacitor both to handle the DC offset and to set filter response characteristics. As the low noise filter is implemented with a Frequency Dependent Negative Resistance (FDNR) device, the shared capacitor may be relatively small. The low noise filter has a load capacitor, with the output of the load capacitor coupled to a bias resistor and voltage. This bias structure cooperates with the load capacitor to set a high cutoff frequency for the low noise filter useful for blocking or canceling the DC offset.

Abstract: Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.

Abstract: The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.

Abstract: The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

Abstract: A receiver for a multi-mode wireless device is provided. The receiver has multiple analog RF front end modules, with each module supporting a different mode of operation. The receiver has a single digital backend module for generating a digital baseband signal. A controller selects one of the available RF modules to use, and the selected RF module provides an analog communication signal to the digital backend. Each available mode has an associated set of factors. When a particular mode is selected, the set of factors associated with the selected mode is provided to the digital backend. The digital backend uses these factors to adjust the processing characteristics of its components, such as its analog to digital converter, filters, and gain controller. In this way, the single digital backend is adaptable to the requirements of each of the available radio modes.

Abstract: A dynamically varying linearity system “DVLS” capable of varying the linearity of a radio frequency (RF) front-end of a communication device responsive to receiving a condition signal indicating a desired mode of operation of a transmitter. The DVLS may include a condition signal indicative of the desired mode of operation and a controller that adjusts the linearity of the transmitter responsive to the condition signal. The condition signal may be responsive to a user interface. The controller, responsive to the condition signal, may dynamically adjust the operating current of the transmitter.

Abstract: Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

Abstract: A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.