Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.

Abstract: The present disclosure provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

Abstract: Implementations of the disclosure provide a surface treatment process for chamber components. In one implementation, the chamber component includes a crystalline body comprising machined surfaces including at least a reflowed surface layer formed in a plasma treatment chamber by placing the body on a pedestal disposed within the plasma chamber, maintaining a pressure in the plasma chamber at 0.1-100 mTorr, flowing a gas into the plasma chamber at a flow rate of 10-500 sccm, applying an RF power to an inductive coil of the plasma chamber to form a plasma from the gas in the plasma chamber, the RF power of 300 Watts is applied at a frequency of 10 kHz to 160 MHz, and applying an RF bias power of 100 Watts at a frequency of 10 kHz to 160 MHz to the pedestal to bombard the body with ions from the plasma for 10-100 hours.

Abstract: A hands-free breast pump system uses an advanced air bag for excellent contact between the air bag and breast so that a vacuum near the nipple can be guaranteed. The breast pumping and non-pumping condition can be easily converted by inflation and deflation of air bag using a computer-controlled microsystem. These properties not only make breast-pumping hands-free, but also allows the wearer to keep her clothing and bra on. The automatic control of breast milk expression also realizes hands-free breast milk pumping in public or during sleep. The control of pump time and duration can be programmed in a program or in an app. The breast milk expression system can be used independently, or together with a bra, or a shirt. The system disclosed in this patent can also simulate breast milk expression by a real baby by using a pulsing pressure in the air bag, which can squeeze the nipple periodically according a predetermined program.

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Abstract: An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.

Abstract: A computer system using 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured thermally to contact heat-generating components and a liquid-liquid heat exchanger. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body. For economic stable operation, cooling water is pumped from large water body such as river to a water tower where water level is kept constant to ensure heat exchanger work at optimal condition. The simple approach for computer system cooling provided in this disclosure is a cost-effective data center efficiency solution.

Abstract: A computer system includes central processing units designed by using reduced instruction set computing (RISC) strategy, dynamic random access memory (DRAM) packages manufactured by using three-dimensional integrated circuit (3D IC) stacked using through-silicon via (TSV) stacking processes, and liquid cooling approach. The system has advantages of low power consumption, fast DRAM access rate, high performance, high cooling efficiency, small form factor, and low costs. Cooling liquid could be water, oil, and ionic liquid. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body such as river, reservoir, or ocean. The computer disclosed in this invention is suitable to be a server for application in datacenter.

Abstract: A computer system using 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured thermally to contact heat-generating components and a liquid-liquid heat exchanger. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body. For economic stable operation, cooling water is pumped from large water body such as river to a water tower where water level is kept constant to ensure heat exchanger work at optimal condition. The simple approach for computer system cooling provided in this disclosure is a cost-effective data center efficiency solution.

Abstract: A computer system (taking server as an example) is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured thermally to contact heat-generating components and a liquid-liquid heat exchanger. The heat generated in computer chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body. For economic stable operation, cooling water is pumped from large water body such as river to a water tower where water level kept constant to ensure heat exchanger work at optimal condition. The simple and effective approach for computer system cooling provided in this disclosure is a cost-effective data center efficiency solution.

Abstract: A computer system using regular IC or 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured to thermally contact heat-generating components in a computer system and a large water body such as river and reservoir. The heat created in computer system is carried out by liquid coolant and dissipated to large water body. The cooling system is simple and cost-effective.

Abstract: A computer system includes central processing units designed by using reduced instruction set computing (RISC) strategy, dynamic random access memory (DRAM) packages manufactured by using three-dimensional integrated circuit (3D IC) stacked using through-silicon via (TSV) stacking processes, and liquid cooling approach. The system has advantages of low power consumption, fast DRAM access rate, high performance, high cooling efficiency, small form factor, and low costs. Cooling liquid could be water, oil, and ionic liquid. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body such as river, reservoir, or ocean. The computer disclosed in this invention is suitable to be a server for application in datacenter.

Abstract: A computer system using regular IC or 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured to thermally contact heat-generating components in a computer system and a large water body such as river and reservoir. The heat created in computer system is carried out by liquid coolant and dissipated to large water body. The cooling system is simple and cost-effective.

Abstract: One or more first parameters associated with an electronic device manufacturing process are monitored. An artificial neural network associated with the one or more first parameters is determined. One or more second parameters are determined using the artificial neural network. The one or more first parameters are adjusted using the one or more second parameters.

Abstract: Methods for reducing line width roughness and/or critical dimension nonuniformity in a photoresist pattern are provided herein. In some embodiments, a method of reducing line width roughness along a sidewall of a patterned photoresist layer disposed atop a substrate includes: (a) depositing a first layer atop the sidewall of the patterned photoresist layer; (b) etching the first layer and the sidewall after depositing the first layer to reduce the line width roughness of the patterned photoresist layer. In some embodiments, (a)-(b) may be repeated until the line width roughness is substantially smooth.

Abstract: The present disclosure provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

Abstract: An apparatus and methods utilized a DC or AC power to supply through a conductive substrate support pedestal to a conductive photomask substrate during a photomask substrate manufacturing process for EUV or other advanced lithography applications are provided. In one embodiment, an apparatus for processing a photomask includes a substrate support pedestal configured to receive a conductive photomask, wherein the conductive photomask is fabricated from a dielectric material substrate with a conductive coating, and at least a conductive path formed in the substrate support pedestal in contact with the photomask substrate configured to be conductive.

Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.