Abstract: The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway.

Abstract: Embodiments of the present invention provide methods and apparatus for removing debris particles using a stream of charged species. One embodiment of the present invention provides an apparatus for removing debris particles from a beam of radiation comprising a charged species source configured to dispense electrically charged species, and a collecting plate biased electrically opposite to the charged species from the charged species source, wherein the collecting plate and the charged species source are disposed on opposite sides of the beam of radiation, a stream of charged species from the charged species source to the collecting plate intersects the beam of radiation, the stream of charged species is configured to attach and remove debris particles from the beam of radiation by electrostatic force, and the collecting plate is configured to receive the charged species and the debris particles removed from the beam of radiation.

Abstract: Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly.

Abstract: Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

Abstract: A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.

Abstract: Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly.

Abstract: A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.

Abstract: Embodiments of the present invention provide methods and apparatus for removing debris particles using a stream of charged species. One embodiment of the present invention provides an apparatus for removing debris particles from a beam of radiation comprising a charged species source configured to dispense electrically charged species, and a collecting plate biased electrically opposite to the charged species from the charged species source, wherein the collecting plate and the charged species source are disposed on opposite sides of the beam of radiation, a stream of charged species from the charged species source to the collecting plate intersects the beam of radiation, the stream of charged species is configured to attach and remove debris particles from the beam of radiation by electrostatic force, and the collecting plate is configured to receive the charged species and the debris particles removed from the beam of radiation.

Abstract: Embodiments of the present invention generally provide apparatus and methods for cleaning a substrate, such as a mask. One embodiment of the present invention provides an apparatus for cleaning a substrate comprising a substrate support configured to receive and support the substrate, a collecting tip connected with an electrostatic power source, wherein the collecting tip is configured to pickup particles on a surface of the substrate using electrostatic force, and an indexing mechanism configured to provide relative movement between the collecting tip and the substrate support.

Abstract: Lightweight and reactive metals can be produced from ore, refined from alloy, and recycled from metal matrix composites using electrolysis in electrolytes including an ionic liquid containing a metal chloride at or near room temperature. Low electric energy consumption and pollutant emission, easy operation and low production costs are achieved.

Abstract: A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.

Abstract: Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

Abstract: Lightweight and reactive metals can be produced from ore, refined from alloy, and recycled from metal matrix composites using electrolysis in electrolytes including an ionic liquid containing a metal chloride at or near room temperature. Low electric energy consumption and pollutant emission, easy operation and low production costs are achieved.

Abstract: A method for detecting endpoint of plasma-assisted etch process by monitoring a parameter of the etch process, such as an automatic matching network parameter, and detecting a predetermined change in the parameter signaling the endpoint. This novel endpoint detection method has advantages of, inter alia, simplicity and reliability, is very cost-effective and requires minimum change to the etch process system hardware. It is particularly useful in the manufacture of photomasks and products manufactured using photomasks.

Abstract: Lightweight and reactive metals can be produced from ore, refined from alloy, and recycled from metal matrix composites using electrolysis in electrolytes including an ionic liquid containing a metal chloride at or near room temperature. Low electric energy consumption and pollutant emission, easy operation and low production costs are achieved.

Abstract: A temperature sensor having a capillary tube or stem, sealed at both ends, with a thin bore defined therein is applied to the measurement of temperatures having a range of about −100° to +400° Centigrade. A bulb comprising a liquid reservoir, is provided at one end of the capillary tube, in liquid communication with the bore, and is generally filled with an ionic thermometric liquid. In the operation of the temperature sensor, temperature is measured by the height of the liquid in the bore.

Abstract: Lightweight and reactive metals can be produced from ore, refined from alloy, and recycled from metal matrix composites using electrolysis in electrolytes including an ionic liquid containing a metal chloride at or near room temperature. Low electric energy consumption and pollutant emission, easy operation and low production costs are achieved.

Abstract: A method of making metal/refractory composites includes bubbling a reactive gas through a melt to form a foam including refractory particles. In continuous mode, the foam is separated from the melt and the melt replenished. Composites of lightweight metals reinforced with discontinuous refractory ceramic particles can be efficiently and economically produced.