Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

Abstract: In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A system and method for using plasma to treat a substrate are described. A plasma processing system includes a substrate holder arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system. The system further includes a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density.

Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

Abstract: Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.

Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

Abstract: A processing system is disclosed having a radio frequency (RF) power system coupled to a process chamber via a transmission line. The RF power system is configured to generate RF power at a RF operating frequency. The processing system also includes a resonant structure arranged within the plasma processing chamber that includes at least one resonant substructure configured to resonate according to at least two different resonant modes when at least one resonant frequency associated with at least one of the modes is at or near the RF operating frequency.

Abstract: This disclosure relates to a plasma processing system for VHF plasma processing using a transmission antenna designed to enable a resonant VHF standing wave inside a plasma process chamber used to manufacture semiconductor devices. The system includes a transmission element capable of being electromagnetically coupled to incoming power lines connected to a power source. The transmission element, power transmission lines, and power source form a resonant circuit capable of enabling a VHF standing wave on the transmission element. The transmission element is folded back on itself to reduce the footprint of the antenna, such that the transmission element(s) can be located inside the plasma process chamber. The transmission antenna has three portions, with the first being electromagnetically coupled to the power transmission line, the second being coupled to plasma, and the third being a folded portion that reduces the transmission element's footprint.

Abstract: Methods and systems are disclosed for focus ring thickness measurement and feedback control within process chambers. For disclosed embodiments, in-chamber sensors measure physical parameters associated with focus rings, and these measurements are used to determine thickness for the focus rings. The thickness determinations can be used to detect when a focus ring should be replaced and can also be used as feedback to adjust the position of the focus rings within the chamber. For one embodiment, measurements from ultrasonic sensors are used to make thickness determinations for focus rings. For further embodiments, these ultrasonic sensors are positioned at end portions of focus ring lift pins. Other sensors can also be used such as capacitive sensors, resistive sensors, and/or other desired sensors. Further variations and implementations can also be achieved using in-chambers sensors to facilitate focus ring thickness determinations.

Abstract: Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract: A processing system is disclosed having a radio frequency (RF) power system coupled to a process chamber via a transmission line. The RF power system is configured to generate RF power at a RF operating frequency. The processing system also includes a resonant structure arranged within the plasma processing chamber that includes at least one resonant substructure configured to resonate according to at least two different resonant modes when at least one resonant frequency associated with at least one of the modes is at or near the RF operating frequency.

Abstract: This application relates to systems and methods for splitting a current signal into at least two signals that are out of phase with each other. The power splitter may include a conductive element that may generate standing magnetic field that alternates at specified frequency. An inductor placed near or in the magnetic field may induce an alternating current at the specified frequency. Each end of the inductor may be coupled to a connector that may be coupled to an antenna that may be incorporated into a plasma processing chamber.

Abstract: A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Abstract: This application relates to systems and methods for splitting a current signal into at least two signals that are out of phase with each other. The power splitter may include a conductive element that may generate standing magnetic field that alternates at specified frequency. An inductor placed near or in the magnetic field may induce an alternating current at the specified frequency. Each end of the inductor may be coupled to a connector that may be coupled to an antenna that may be incorporated into a plasma processing chamber.