Abstract: A rail assembly is provided, suitable for embedding in concrete, including a profile rail having a rail body, wherein the rail body has a first lateral wall, a second lateral wall, a first rail lip protruding from the first lateral wall, and a second rail lip protruding from the second lateral wall. The rail assembly has a reinforcing element with a force-absorbing body, wherein the force-absorbing body is positioned in front of the first lateral wall of the profile rail for contacting the first lateral wall of the profile rail with the force-absorbing body. A construction body having a concrete element, in which a rail assembly of this type is embedded is also provided.

Abstract: A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.

Abstract: A profiled rail assembly for casting into concrete. The profiled rail assembly includes a profiled rail including a rail body having a rail slot extending in the direction of a longitudinal axis of the profiled rail, and a reinforcing body including a head element and at least one tension element protruding from the head element, the head element opposite the at least one tension element having a head element major face defining a contact surface for a formwork element. The at least one tension element is connected to the profiled rail.

Abstract: Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.

Abstract: A structure is provided, including a concrete body having a first surface and having a second surface arranged at an angle to the first surface; a profiled rail embedded in the concrete body, the profiled rail having a rail body having a rail slot extending in the direction of the longitudinal axis of the profiled rail, and the profiled rail emerging on the first surface of the concrete body; and a reinforcing body, which emerges on the second surface of the concrete body and which overlaps with the rail body, with regard to the direction of the longitudinal axis of the profiled rail, at least in some regions. A profiled rail assembly for such a structure is also provided.

Abstract: A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

Abstract: A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

Abstract: A thread-forming screw has a shank which, in a front region of the shank, has a tip for insertion into a bore in a substrate, and in a rear region of the shank, has a drive for transmitting a torque to the shank. The shank has a spiral-shaped groove and a thread spiral which is inserted into the spiral-shaped groove. The spiral-shaped groove has a front flank and a rear flank disposed opposite the front flank. The front flank, at least regionally, has a different part flank angle than the rear flank.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

Abstract: A structure is provided, including a concrete body having a first surface and having a second surface arranged at an angle to the first surface; a profiled rail embedded in the concrete body, the profiled rail having a rail body having a rail slot extending in the direction of the longitudinal axis of the profiled rail, and the profiled rail emerging on the first surface of the concrete body; and a reinforcing body, which emerges on the second surface of the concrete body and which overlaps with the rail body, with regard to the direction of the longitudinal axis of the profiled rail, at least in some regions. A profiled rail assembly for such a structure is also provided.

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Abstract: A rail assembly is provided, suitable for embedding in concrete, including a profile rail having a rail body, wherein the rail body has a first lateral wall, a second lateral wall, a first rail lip protruding from the first lateral wall, and a second rail lip protruding from the second lateral wall. The rail assembly has a reinforcing element with a force-absorbing body, wherein the force-absorbing body is positioned in front of the first lateral wall of the profile rail for contacting the first lateral wall of the profile rail with the force-absorbing body. A construction body having a concrete element, in which a rail assembly of this type is embedded is also provided.

Abstract: A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.

Abstract: An expansion anchor with a bolt and at least one expansion element is disclosed. An oblique surface is arranged in the region of the first end of the bolt and forces the expansion element radially outward on the bolt if the bolt is displaced in a pull-out direction relative to the expansion element. The bolt has, in the region of its rear end facing away from the first end, a load-absorber which is suitable for introducing tensile forces which are directed in the pull-out direction into the bolt. A plurality of grooves that are closed with respect to the first end of the bolt are disposed in the oblique surface and the plurality of grooves reduce a contact surface between the expansion element and the oblique surface. The contact surface between the expansion element and the oblique surface is reduced by the plurality of grooves by 20 to 50%.

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.