Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: In one aspect the invention provides a gas field ion source assembly that includes an ion source in connection with an optical column such that an ion beam generated at the ion source travels through the optical column. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the methods provide for manufacturing, maintaining and enhancing the performance of a gas field ion source including sharpening the tip of the ion source in situ.

Abstract: Transmission ion microscope. A bright light ion source generates an ion beam that is focused on a sample by an electrostatic condenser lens means. An objective lens focuses the ion beam transmitted through the sample to form an image. A projector lens enlarges the image and a phosphor screen receives the enlarged image to generate light allowing visualization of the image.

Abstract: Ion source and method of making and sharpening. The ion source is a single crystal metal conductor having a substantially conical tip portion with substantial rotational symmetry. The tip portion terminates with a tip radius of curvature in the range of 50–100 nanometers. The ion source is made by electrochemical etching so that a conical tip of a selected geometry is formed. The ion source is then sharpened to provide a source of ions from a volume near the size of a single atom. Further, this ion source makes possible a stable and practical light ion microscope which will have higher resolution than existing scanning electron microscopes and scanning metal-ion microscopes.

Abstract: Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.

Abstract: In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.

Abstract: Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis.

Abstract: Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis.

Abstract: Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis.

Abstract: Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis.

Abstract: Ion beam apparatus provides beam blanking by utilizing an aperture through which the beam passes during unblanked periods, and elements for deflecting the beam during blanking so that the beam is deflected away from the aperture. Electrodes between the aperture element and the deflecting elements generate a potential exceeding the kinetic energy of charged particles emitted from the aperture element due to ions striking the aperture element during blanking. Charged particles emitted from the aperture element are thus prevented from striking the beam deflecting elements, thereby reducing hydrocarbon cracking, insulator accumulation, and charge accumulation on the deflecting elements. Beam stability is thereby enhanced. Charged particles emitted from the aperture element are also returned to the aperture element, so that an accurate measure of ion beam current is obtained by measuring current flow to the aperture element.

Abstract: Ion source methods and apparatus include an ion generating element for providing a reservoir of flowing liquid source material, accelerating elements for providing an electric field around the ion generating element, and shielding elements. The shielding element is constructed from a material including atoms which, if backsputtered onto the ion generating element, do not substantially degrade ion source performance.

Abstract: An apparatus is described for allowing an ion beam and an electron beam to travel toward a predetermined region of a substrate surface during the sputter etching and imaging of insulating and other targets while preventing deflection of the electron beam by sources of stray electrostatic fields on the substrate surface. A metal shield is provided having a funnel-shaped portion leading to an orifice. The incident finely focused ion beam, together with the electron beam, which is used to neutralize the charge created by the incident ion beam, pass to the target through the orifice. The shield also physically supports a gas injection needle that injects a gas through the orifice toward the predetermined region.

Abstract: Ion beam machining apparatus which uses a focused ion beam to sputter particles from a target is disclosed. The beam is scanned over the target and photons emitted in response to the incidence of the beam on the target are analyzed to identify the different materials in the target and the location of these materials. Electrons are projected in a stream to the impingement site of the ion beam, in order to neutralize the charge produced by the beam and thereby stabilize the position of this site, and the photon detectors are isolated from any light emitted by the electron source.

Abstract: An evacuable vessel having a heavy cylindrical wall seated on a generally square base has a heavy cover hinged at one end to a hinge support attached to the wall. The cover is bolted to the wall in the closed position and sealed by an O-ring. The hinge bolts are seated in a slotted hole to allow the cover to pivot about the O-ring when closing. Adjustable set screws may be used to tighten the hinge arms and introduce a selected degree of friction. Springs are connected between the outside end of each hinge arm and the base.

Abstract: An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

Abstract: A pattern data handling system for an electron beam exposure system wherein figure data conversion is performed simultaneously with irradiation of a workpiece, thereby providing high speed operation. Figure data, containing figure descriptions for a stripe area, is subdivided into blocks of segment figure data and is stored in a pattern data memory. Multiple pattern generators, each including a bit map memory, simultaneously convert blocks of segment figure data to bit maps and store the bit maps in their respective bit map memories. The bit maps are transferred out of the bit map memories and through a shift register one at a time to provide continuous beam blanking data. The system is particularly useful for electron beam exposure of reticles which are characterized by little or no repetition of features and by relatively large features.

Abstract: A hybrid moving stage and scanning electron beam lithography system employs a circuit to make an approximate correction to the electron optical beam steering element. Correction is accomplished for observed, repetitive distortions. The position of the beam is thereby corrected for various modes of raster scan distortion. Field curvature distortion is corrected by a circuit which employs a term proportional to the square of the value of the scan direction coordinate. Keystone error is corrected by a circuit which employs a term proportional to the value of the coordinate orthogonal to the scan direction.