Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

Abstract: A substrate processing chamber component including a deposition ring for protecting exposed portions of a substrate support pedestal, wherein the deposition ring includes a metal portion and a ceramic isolator portion. The ceramic isolator portion may be a plasma coated ceramic isolator coating, and the metal portion may be made of stainless steel. The ceramic isolator portion may be made of a ceramic such as alumina, yttria, aluminum nitride, titania, zirconia, and combinations thereof.

Abstract: Residues are removed from a surface of a substrate processing component which has a polymer coating below the residues. In one version, the component surfaces are contacted with an organic solvent to remove the residues without damaging or removing the polymer coating. The residues can be process residues or adhesive residues. The cleaning process can be conducted as part of a refurbishment process. In another version, the residues are ablated by scanning a laser across the component surface. In yet another version, the residues are vaporized by scanning a plasma cutter across the surface of the component.

Abstract: Residues are removed from a surface of a substrate processing component which has a polymer coating below the residues. In one version, the component surfaces are contacted with an organic solvent to remove the residues without damaging or removing the polymer coating. The residues can be process residues or adhesive residues. The cleaning process can be conducted as part of a refurbishment process. In another version, the residues are ablated by scanning a laser across the component surface. In yet another version, the residues are vaporized by scanning a plasma cutter across the surface of the component.

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

Abstract: A method of fabricating a substrate processing chamber component involves forming a component having a textured surface and sweeping a jet of pressurized fluid across the textured surface of the component. The jet of fluid is pressurized sufficiently high to dislodge substantially all the particles from the textured surface. The method can be applied to dislodge grit particles from textured exposed surfaces formed by electromagnetic energy beam scanning and grit blasting. The method can also be applied to remove loosely adhered coating particles from the textured surfaces of coated components.

Abstract: Embodiments described herein provide methods of surface preparation using an electromagnetic beam prior to modification of the surface of a component which advantageously improve the quality of the final texture in those places and correspondingly reduces particle contamination. In one embodiment a method of providing a texture to a surface of a component for use in a semiconductor processing chamber is provided. The method comprises defining a plurality of regions on the surface of a component, moving an electromagnetic beam to a first region of the plurality of regions, scanning the electromagnetic beam across a surface of the first region to heat the surface of the first region, and scanning the electromagnetic beam across the heated surface of the first region to form a feature.

Abstract: A method of fabricating a substrate processing chamber component involves forming a component having a textured surface and sweeping a jet of pressurized fluid across the textured surface of the component. The jet of fluid is pressurized sufficiently high to dislodge substantially all the particles from the textured surface. The method can be applied to dislodge grit particles from textured exposed surfaces formed by electromagnetic energy beam scanning and grit blasting. The method can also be applied to remove loosely adhered coating particles from the textured surfaces of coated components.

Abstract: Residues are removed from a surface of a substrate processing component which has a polymer coating below the residues. In one version, the component surfaces are contacted with an organic solvent to remove the residues without damaging or removing the polymer coating. The residues can be process residues or adhesive residues. The cleaning process can be conducted as part of a refurbishment process. In another version, the residues are ablated by scanning a laser across the component surface. In yet another version, the residues are vaporized by scanning a plasma cutter across the surface of the component.

Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.