Abstract: A multi-zone illuminator for processing semiconductor wafers is described which comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

Abstract: A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.

Abstract: A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity.

Abstract: A multi-zone illuminator for processing semiconductor wafers comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

Abstract: A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.

Abstract: A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face.

Abstract: An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.

Abstract: A coupling device (10) provides sealing members (24), (26), preferably Indium wire O-rings (72), (74), suitable for sealing engagement with an insulating member (28) under cryogenic, high-pressure conditions. Coupling device (10) is designed to couple a first metal pipe attached to a first adapter (12), and a second metal pipe attached to a second adapter (14), so that fluid may be conveyed via bore (36), chamber (84), and bore (48) under such cryogenic high-pressure conditions. According to the invention, the coupling device (10) provides effective sealing under these extreme conditions while also providing thermal and electrical insulation due to the advantageous construction featuring insulating member (28), first collar member (20) and second collar member (22).

Abstract: A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face.

Abstract: A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.

Abstract: A process for silylation of positive or negative photosensitive resist layer on a semiconductor wafer after the resist layer has been exposed to radiant energy through a mask which includes introducing a silylating agent to the wafer at high pressure over 760 torr and, usually, at temperatures less than 180.degree. C. Increased pressure increases the rate of silylation, allows practical use of lower process temperatures, and, therefore, allows better process control. Also an apparatus is disclosed for applying the high pressure silylation process to a wafer.

Abstract: A semiconductor wafer plasma processing magnetron module (12) for magnetron-plasma-enhanced processing of semiconductor wafers comprises a base (50) and distributed magnet array (52). The magnet array (52) comprises a plurality of associated magnet unit cells (54). Unit cells (54) associated for producing a periodic magnetic field at the semiconductor wafer (22). The magnetron (12), including the magnetic array (52), mounts to base (50). Unit cells (54) form a repetitive pattern across the surface of magnet array (52). Magnetron module (12) produces a magnetic field possessing periodic uniformity. Unit cells (54) associate to permit expansion of magnet array (52) for any wafer size. A preferred embodiment of the invention includes a hexagonal configuration of magnets (56) and (58) that form unit cells (54).

Abstract: The deposition of zinc sulfide films (16) using dimethylzinc (46) and hydrogen sulfide (44) in a vacuum processor reactor (50) provides a low temperature process applicable for high volume production of infrared focal planes. These layers (16) of zinc sulfide are used as insulators and infrared anti-reflective coatings which are free of contamination relative to physical vapor deposited ZnS films. The zinc sulfide layers (16) are formed by evacuating a chamber (62) and mixing hydrogen sulfide gas (44) and dimethylzinc gas (46) at specific operating conditions until the desired ZnS film thickness is obtained. The rate of growth of the zinc sulfide (16) film is controlled by varying the temperature, pressure, and the relative flow rates of the hydrogen sulfide gas (44) and the dimethylzinc gas (46).

Abstract: A vacuum-tight wafer carrier, and a load lock suitable for use with this wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The carrier also contains elastic elements to restrain the wafers from rattling around, which further reduces the internal generation of particulates. When the wafer carrier is placed into the load lock, its body is lowered from beneath its cover through an aperture into a lower chamber, where wafers are loaded and unloaded under vacuum; the carrier cover remains covering the aperture into the lower chamber, so that the wafers never see any surface which is directly exposed to atmosphere. A wafer transport arm mechanism permits interchange of wafers among one or more processing stations and one or more load locks of this type.

Abstract: A method for etching a tungsten film which includes introducing activated species of a halogenated hydrocarbon to the tungsten film.

Abstract: An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator includes an inlet tube, a discharge tube in fluid communication with the inlet tube, an excitation cavity surrounding the discharge tube, an outlet tube in fluid communication with the discharge tube and a process chamber, and an injection tube in the outlet tube.

Abstract: A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.

Abstract: A vacuum-tight wafer carrier, and a load lock suitable for use with this wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The carrier also contains elastic elements to restrain the wafers from rattling around, which further reduces the internal generation of particulates. When the wafer carrier is placed into the load lock, its body is lowered from beneath its cover through an aperture into a lower chamber, where wafers are loaded and unloaded under vacuum; the carrier cover remains covering the aperture into the lower chamber, so that the wafers never see any surface which is directly exposed to atmosphere. A wafer transport arm mechanism permits interchange of wafers among one or more processing stations and one or more load locks of this type.

Abstract: A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.

Abstract: A vacuum-tight wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The door of the vacuum carrier contains elastic elements to press the wafers lightly against the back of the carrier box. Thus, when the door of the box is closed, the wafers are restrained from rattling around, which further reduces the internal generation of particulates.