Abstract: A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.

Abstract: An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.

Abstract: A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet completed, to maintain the balance of chemistries which provides selectivity and anisotropy. In a tungsten etch, WF.sub.6 is usefully added during the post etch period to provide this loading.

Abstract: A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated form a mixture of a source of Fluorine and Helium with the process chamber within the process module being generally at ambient temperatures.

Abstract: A thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source, such as SF.sub.6, plus a bromine source, such as HBr, plus a hydrocarbon source, e.g., an alkyl, such as methane. This passivating chemistry provides a very robust passivant which will provide highly anisotropic high rate flow etching, and will also improve the selectivity to photoresist.

Abstract: A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafer handling steps.

Abstract: A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

Abstract: A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.

Abstract: A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.

Abstract: A process wherein a thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a fluorosilane (e.g. SiF.sub.4), plus a bromine source (such as HBr), plus a weak oxygen source such as carbon monoxide. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.

Abstract: A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.

Abstract: A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.

Abstract: A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpieces which may be loaded into the chamber.

Abstract: A rapid thermal processing apparatus and method wherein a transparent (e.g. quartz) vacuum wall is sealed to the process chamber by a radially elastically expandable metallic seal, e.g. a hollow metallic ring with a spring in its core, which has a soft surface portion which deforms inelastically to make a seal.

Abstract: A process module having a heating module with two heating rings and a reflector. The heating rings are separately controlled in order to provide a variety of heating configurations to a wafer. A transparent wall or a conductive substrate is provided between the heating rings and a workpiece which is to be heated.

Abstract: A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.

Abstract: A process for etch of GaAs wafers which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, CH.sub.4 ; and one of a group of CF.sub.4 or F.sub.2 with the process chamber within the process module being generally at ambient temperatures.

Abstract: A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl.sub.3, and Cl.sub.2, and with the process chamber within the process module being generally at ambient temperatures.

Abstract: A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.

Abstract: A process module having remote plasma and in situ plasma generators, and a radiant heater, which represent three separate energy sources. The three sources can be used singly or in any combination and can be separately controllable.